MITSUBISHI MGF0953P User Manual
< High-power GaAs FET (small signal gain stage) >
MGF0953P
L & S BAND / 0.6W
SMD / Plastic Mold non - matched
DESCRIPTION
The MGF0953P GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
High output power
Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm
High power gain
Gp=16.5dB(TYP.) @f=2.15GHz
High power added efficiency
add=40%(TYP.) @f=2.15GHz,Pin=10dBm
Plastic Mold Lead – less Package
APPLICATION
For L/S Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=0.15A Rg=1000
Delivery Tape & Reel(1.5K)
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGSO
VGDO Gate to drain breakdown voltage -15 V
ID Drain current 0.4 A
IGR Reverse gate current -1.25 mA
IGF Forward gate current 5 mA
PT Total power dissipation 6.25 W
Tch Cannel temperature 150 C
Tstg Storage temperature -40 to +150 C
Gate to source
breakdown voltage
-15 V
Electrical characteristics
(Ta=25C)
Symbol Parameter Test conditions Limits Unit
V
GS(off)
Po *1
add *1
G
LP *2 Linear Power Gain
Rth(ch-c)
Gate to source cut-off voltage
Output power
Power added Efficiency
Thermal Resistance *3
VDS=3V,ID=0.1mA -2 - -5 V
VDS=10V,ID=0.15A,f=2.15GHz
Pin=10dBm, *2:Pin=0dB
*1:
Vf Method - 14 20 C/W
Fig.1
Min. Typ. Max.
26 28 - dBm
- 40 - %
16.5 18 - dB
*3:Channel to case
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0953P
L & S BAND / 0.6W
SMD / Plastic Mold non - matched
MGF09153P TYPICAL CHARACTERISTICS
Publication Date : Apr., 2011
2
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