Mitsubishi MF365A-LCDATXX, MF3513-LSDATXX, MF34M1-LSDATXX, MF34M1-LCDATXX, MF3129-LCDATXX Datasheet

MITSUBISHI MEMORY CARD

STATIC RAM CARDS

8/16-bit Data Bus

Static RAM Card

Connector Type

Two- piece 68-pin

DESCRIPTION

Mitsubishi’s Static RAM cards provide large
memory capacities on a device approximately the
size of a credit card(85.6mm×54mm×3.3mm).
The cards use a 8/16 bit data bus.The devices
use a replaceable lithium battery to maintain data.
Available in 64K byte-4M byte capacities,
Mitsubishi’s Static RAM cards are available with
a 68-pin, two-piece connector.

MF365A-LCDATXX
MF365A-LSDATXX
MF3129-LCDATXX
MF3129-LSDATXX
MF3257-LCDATXX
MF3257-LSDATXX
MF3513-LCDATXX
MF3513-LSDATXX
MF31M1-LCDATXX
MF31M1-LSDATXX
MF32M1-LCDATXX

MF32M1-LSDATXX

MF34M1-LCDATXX

MF34M1-LSDATXX

Electrostatic discharge protectiton to 15kV
Buffered interface
68-pin connector
8-bit and 16-bit data width
Write protect switch
Battery voltage pin
LS Type Wide Range operating temperature
Ta= -20 to 70°C

FEATURES

Uses TSOP (Thin Small Outline Package) to
achieve very high memory density coupled
with high reliability, without enlarging card
size

PRODUCT LIST

Item Memory Data Bus Attribute Auxialiary Memory Outline Main battery

Type name capacity width(bits) memory battery organization drawing holder
MF365A-LCDATXX 64KB 256K bit SRAM×2
MF3129-LCDATXX 128KB 256K bit SRAM×4
MF3257-LCDATXX 256KB 1M bit SRAM×2
MF3513-LCDATXX 512KB 1M bit SRAM×4
MF31M1-LCDATXX 1MB 1M bit SRAM×8
MF32M1-LCDATXX 2MB 1M bit SRAM×16
MF34M1-LCDATXX 4MB 8/16 NO NO 4M bit SRAM×8 68P-003 Screw type
MF365A-LSDATXX 64KB 256K bit SRAM×2
MF3129-LSDATXX 128KB 256K bit SRAM×4
MF3257-LSDATXX 256KB 1M bit SRAM×2
MF3513-LSDATXX 512KB 1M bit SRAM×4
MF31M1-LSDATXX 1MB 1M bit SRAM×8
MF32M1-LSDATXX 2MB 1M bit SRAM×16
MF34M1-LSDATXX 4MB 4M bit SRAM×8

APPLICATIONS
Office automation Data Communications
Computers Industrial
Telecommunications Consumer

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PIN ASSIGNMENT

1

GND

Ground

35

GND

Ground

2D336

CD1#

Card detect 1

3D437

D114D5

Data I/O

38

D125D639D13

Data I/O

6D740

D147CE1#

Card enable 1

41

D158A10

Address input

42

CE2#

Card enable 2

9

OE#

Output enable

43NC10

A1144NC

No connection

11A945NC12A8 Address input

46

A17

A17(NC for≤128KB types)

13

A1347A18

A18(NC for≤256KB types)

14

A1448A19

A19(NC for≤512KB types)

15

WE#

Write enable

49

A20

A20(NC for≤1MB types)

16NCNo connection

50

A21

A21(NC for≤2MB types)

17

VCCPower supply voltage

51

VCCPower supply voltage

18NCNo connection

52NCNo connection

19

A16

A16(NC for 64KB type)

53NCNo connection

20

A1554NC21A1255NC22A756NC23A657NC

No connection

24A5 Address input

58NC25A459NC26A360NC27A261

REG#

REG function

28A162

BVD2

Battery voltage detect 2

29A063

BVD1

Battery voltage detect 1

30D064D831D1 Data I/O

65D9 Data I/O

32D266

D1033WP

Write protect

67

CD2#

Card detect 2

34

GND

Ground

68

GND

Ground

Two-Piece Type (68-pin)

MITSUBISHI MEMORY CARD

STATIC RAM CARDS

Pin Pin

Symbol

No. No.

Function

Symbol

Function

Address input

WRITE PROTECT MODE (WP)
When the write protect switch is switched on, this
card goes into a write protect mode that can read
but not write data.
In this mode, the WP pin becomes “H” level.
At the shipment the write protect switch is switched
off (Normal mode : The card can be written ; WP pin
indicates “L” level).

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BLOCK DIAGRAM (4MB)

A21

D0

BVD1

WP#

WRITE PROTECT

ON

19

16

BR2325

POWER CONTROLLER

POWER

8

MITSUBISHI MEMORY CARD

STATIC RAM CARDS

CE1#
CE2#

WE#
OE#

REG#

CD1#
CD2#

A20
A0

A19
A18
A17
A16
A15
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1

OFF

ADDRESS­DECODER

ADDRESS-

BUS

BUFFERS

MODE

CONTROL

LOGIC

CS#

COMMON
MEMORY

4Mbit SRAM×8

OE# WE#

TO INTERNAL

VOLTAGE DETECTOR

&

GND

DATA-BUS

BUFFERS

VCC

BVD2

D15
D14
D13
D12
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1

FUNCTION TABLE

Mode

REG# CE1# CE2# OE# WE# A0

Standby X H H X X X High-impedance High-impedance Standby
Read A (16bit) common H L L L H X Odd Byte Data out Even Byte Data out Active
Write A (16bit) common H L L H L X Odd Byte Data in Even Byte Data in Active
Read B (8bit) common H L H L H L High-impedance Even Byte Data out Active

H L H L H H High-impedance Odd Byte Data out Active

Write B (8bit) common H L H H L L High-impedance Even Byte Data in Active

H L H H L H High-impedance Odd Byte Data in Active
Read C (8bit) common H H L L H X Odd Byte Data out High-impedance Active
Write C (8bit) common H H L H L X Odd Byte Data in High-impedance Active
Output disable X X X H H X High-impedance High-impedance Active
Read A (16bit) attribute L L L L H X Data out (unknown) Data out (FFh) Active
Read B (8bit) attribute L L H L H L High-impedance Data out (FFh) Active

L L H L H H High-impedance Data out (unknown) Active
Read C (8bit) attribute L H L L H X Data out (unknown) High-impedance Active

I/O (D15~D8) I/O (D7~D0) ICC

Note 1 : H=VIH, L=VIL, X=VIH or VIL

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MITSUBISHI MEMORY CARD

STATIC RAM CARDS

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Conditions Ratings Unit
VCC Supply voltage -0.3~6.0 V
Vi Input voltage With respect to GND -0.3~VCC+0.3 V
Vo Output voltage 0~VCC V
Topr1 Operating temperature 1 Read, Write, Operation LC series 0~70 °C

LS series -20~70 °C

Topr2 Operating temperature 2 Data retention LC series 0~70 °C

LS series -20~70 °C

Tstg Storage temperature -30~80 °C

RECOMMENDED OPERATING CONDITIONS (LC series Ta= 0~55°C, unless otherwise noted)
(LS series Ta=-20~70°C, unless otherwise noted)

Symbol

VCC VCC Supply voltage 4.50 5.0 5.25 V
GND System ground 0 V
VIH High input voltage 3.5 VCC V
VIL Low input voltage 0 0.8 V

Parameter

Min. Typ. Max.

Limits

Unit

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MITSUBISHI MEMORY CARD

STATIC RAM CARDS

ELECTRICAL CHARACTERISTICS (LC series Ta= 0~55°C, VCC=4.50~5.25V, unless otherwise noted)

(LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted)

Symbol

VOH High output voltage IOH=-1.0mA 2.4 V
VOL Low output voltage IOL=1mA 0.4 V
IIH High input current VI=VCC V 10 µA
IIL Low input current VI=0V CE1#, CE2#, WE#, OE#, REG# -10 -70 µA

IOZH High output current CE1#=CE2#=VIH or OE#=VIH WE#=VIH, 10 µA

IOZL Low output current CE1#=CE2#=VIH or OE#=VIH WE#=VIH, -10 µA

ICC 1 • 1 Active supply Other inputs VIH or VIL 2MB 16bit 160 mA

ICC 1 • 2 Active supply Other inputs ≤0.2V or 2MB 16bit 150 mA

ICC 2 • 1 Standby supply current 1 CE1#=CE2#=VIH

ICC 2 • 2 Standby supply current 2 Other inputs ≤ 0.2V or 256KB~1MB 0.15 0.45 mA

VBDET1 Battery detect Vcc=5V,Ta=25°C V

VBDET2 Battery detect Vcc=5V,Ta=25°C V

Parameter

in off state VO=VCC

in off state VO=0V

CE1#=CE2#=VIL 8bit 110

current 1 Outputs=open 8bit 120

Cycle time=250ns 4MB 16bit 200

CE1#=CE2# ≤ 0.2V 8bit 100

current 2 ≥ VCC-0.2V 8bit 110

Outputs=open 4MB 16bit 190
Cycle time=250ns 8bit 150

Other inputs=VIH or VIL
CE1#=CE2# ≥ VCC-0.2V 64KB,128KB 0.15 0.30

≥ VCC-0.2V 2MB,4MB 0.30 0.65

reference voltage 1

reference voltage 2

¬

¬

Test conditions Unit

Other inputs -10

64KB~1MB 16bit 150

8bit 160

64KB~1MB 16bit 140

Note 2 : Currents flowing into the IC are taken as positive (unsigned).

3 : Typical values are measured at VCC=5V, Ta=25°C.

¬

Pin asserted when battery voltage drops below specified level.

Limits

Min. Typ. Max.

10 mA

2.37

2.65

2.47

2.75

2.27

2.55

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MITSUBISHI MEMORY CARD

STATIC RAM CARDS

CAPACITANCE

Symbol

CI Input capacitance VI=GND, VI=25mVrms 64KB~2MB 45 pF

CO Output capacitance VO=GND, VO=25mVrms, 64KB~2MB 45 pF

Note 4 : These parameters are not 100% tested.

SWITCHING CHARACTERISTICS
Read Cycle (LC series Ta= 0~55°C, VCC=4.50~5.25V, unless otherwise noted)

(LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted)

Parameter

f=1 MHZ, Ta=25°C 4MB 30

f=1 MHZ, Ta=25°C 4MB 20

Symbol Parameter

tCR Read cycle time 200 ns
ta(A) Address access time 200 ns
ta(CE) Card enable access time 200 ns
ta(OE) Output enable accese time 100 ns
tdis(CE) Output disable time (from CE#) 90 ns
tdis(OE) Output disable time (from OE#) 90 ns
ten(CE) Output enable time (from CE#) 5 ns
ten(OE) Output enable time (from OE#) 5 ns
tV(A) Data valid time (after address change) 0 ns

Test conditions

Min. Typ. Max.

Limits

Min. Typ. Max.

Limits

Unit

Unit

TIMING REQUIREMENTS
Write Cycle(LC series Ta= 0~55°C, VCC=4.50~5.25V, unless otherwise noted)

(LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted)

Limits

Symbol Parameter

tCW Write cycle time 200 ns
tw(WE) Write pulse width 120 ns
tsu(A) Address set up time 20 ns
tsu(A-WEH) Address set up time with respect to WE# high 140 ns
tsu(CE-WEH) Card enable set up time with respect to WE# high 140 ns
tsu(D-WEH) Data set up time with respect to WE# high 60 ns
th(D) Data hold time 30 ns
trec(WE) Write recovery time 30 ns
tdis(WE) Output disable time (from WE#) 90 ns
tdis(OE) Output disable time (from OE#) 90 ns
ten(WE) Output enable time (from WE#) 5 ns
ten(OE) Output enable time (from OE#) 5 ns
tsu(OE-WE) OE# set up time with respect to WE# low 10 ns
th(OE-WE) OE# hold time with respect to WE# high 10 ns

Min. Typ. Max.

Unit

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MITSUBISHI MEMORY CARD

t

ta(A)

ta

ten

ten(OE)

tdis

t

ta(OE)

OUTPUT VALID

Hi-Z

t

Hi-Z

ten(OE)

t

tSU(CE-WEH)

tSU(A-WEH)

tSU(A)

th

tW(WE)

tSU(OE-WE)

tdis(OE)

tdis(WE)

trec(WE)

ten(WE)

Hi-Z

STATIC RAM CARDS

TIMING DIAGRAM
Read Cycle

An

VIH

VIL

VIH

CE#

VIL

VIH

OE#

VIL

Dm
(DOUT)

Write Cycle (WE# control)

VOH
VOL

WE#=“H” level
REG#=“H” level

CR

V(A)

(CE)

(CE)

Note 5 : Indicates the don’t care input

CW

dis(CE)

(OE)

An

CE#

OE#

WE#

Dm
(DIN)

Dm
(DOUT)

VIH

VIL
VIH

VIL
VIH

VIL
VIH

VIL
VIH
VIL

VOH
VOL

REG#=“H” level

tSU(D-WEH)

DATA INPUT STABLE

th(D)

(OE-WE)

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Write Cycle (CE# control)

tCRR

Read cycle time

300nsta(A)R

Address access time

300nsta(CE)R

Card enable access time

300nsta(OE)R

Output enable access time

150nstdis(CE)R

Output disable time (from CE#)

100nstdis(OE)R

Output disable time (from OE#)

100nsten(CE)R

Output enable time (from CE#)

5nsten(OE)R

Output enable time (from OE#)

5nstV(A)R

Data valid time after address change

0

ns

tCWt

tSU(A)

trec(WE)

Hi-Z

VIH

An

VIL

VIH

CE#

VIL

VIH

WE#

VIL

Dm
(DIN)

VIH
VIL

MITSUBISHI MEMORY CARD

SU(CE-WEH)

tSU(D-WEH)

DATA INPUT STABLE

STATIC RAM CARDS

th(D)

OE#=“H” level
REG#=“H” level

SWITCHING CHARACTERISTICS (Attribute)
Read Cycle(LC series Ta= 0~55°C, VCC=4.50~5.25V, unless otherwise noted)

(LS series Ta=-20~70°C, VCC=4.50~5.25V, unless otherwise noted)

Limits

Symbol Parameter Min. Typ. Max. Unit

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TIMING DIAGRAM (Attribute)

tCRR

ta(A)R

ta

R

ten

R

ten

R

tdis

R

t

R

ta(OE)R

OUTPUT VALID

Hi-Z

tdis(CE)R

Read Cycle

VIH

An

VIL

VIH

CE#

VIL

VIH

OE#

VIL

Dm
(DOUT)

VOH
VOL

(CE)

(CE)

(OE)

MITSUBISHI MEMORY CARD

STATIC RAM CARDS

V(A)

(OE)

WE#=“H” level
REG#=“L” level

Note 6 : Test Conditions

Input pulse levels : VIL=0.4V, VIH=4.0V
Input pulse rise, fall time : tr=tf=10ns
Reference voltage

Input : VIL=0.8V, VIH=3.5V
Output : VOL=0.8V, VOH=3.0V

(ten and tdis are measured when output voltage is± 500mV from steady state. )

Load : 100pF+1 TTL gate

5pF+1 TTL gate (at ten and tdis measuring)
7 : Writing is executed in overlap of CE# and WE# are “L” level. (only for Common Memory)
8 : Don’t apply inverted phase signal externally when Dm pin is in output mode.
9 : CE# is indicated as follows:

Read A/Write A : CE#=CE1#=CE2#
Read B/Write B : CE#=CE1#, CE2#=“H” level
Read C/Write C : CE#=CE2#, CE1#=“H” level

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MITSUBISHI MEMORY CARD

STATIC RAM CARDS

ELECTRICAL CHARACTERISTICS
BATTERY BACKUP (LC series Ta= 0~55°C, unless otherwise noted)
(LS series Ta=-20~70°C, unless otherwise noted)

Limits

Symbol Parameter Test Conditions Min. Typ. Max. Unit

VBATT Back-up enable battery voltage All pins open 2.6 V

VI(CE) Card enable voltage 2.4V≤VCC≤5.25V 2.4 V

0V≤VCC<2.4V VCC-0.1 VCC VCC+0.1

64KB 3

128KB 5

All pins open, 256KB 3

ICC(BUP) Battery back-up supply current VBATT=3V, 512KB 5 µA

Ta=25°C 1MB 9

2MB 17
4MB 9

64KB 40
128KB 70
256KB 100

ICC(BUP) Battery back-up supply current All pins open, 512KB 200 µA

VBATT=3V 1MB 400

2MB 800
4MB 400

TIMING REQUIREMENTS (LC series Ta= 0~55°C, unless otherwise noted)
(LS series Ta=-20~70°C, unless otherwise noted)

Limits

Symbol Parameter Min. Typ. Max. Unit

tpr Power supply rise time 0.1 300 ms
tpf Power supply fall time 3 300 ms
tsu(VCC) Set up time at power on 20 ms
trec(VCC) Recovery time at power off 1000 ns

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MITSUBISHI MEMORY CARD

CE2#

90%

CE2

STATIC RAM CARDS

CARD INSERTION/REMOVAL TIMING DIAGRAM

VCC MIN means Minimum Operating Voltage=4.75V.

90%

tpf

VIH

10%

10%

VCC

VCC MIN

trec(VCC)

CE1#,

Note 10: When the card is holding valuable data, the battery must not be removed unless VCC is

present.

BATTERY SPECIFICATIONS

A replaceable battery (type BR2325) with a capacity of 165mAH is used:
Estimated battery life when the card is left continuously.

MF365A-LC/LSDATXX 5.9years
MF3129-LC/LSDATXX 3.6years
MF3257-LC/LSDATXX 5.9years
MF3513-LC/LSDATXX 3.6years
MF31M1-LC/LSDATXX 2.0years
MF32M1-LC/LSDATXX 1.1years
MF34M1-LC/LSDATXX 2.0years

Conditions

Temperature : 25°C
Humidity : 60%RH

VIH

tpr

VCC MIN

tsu(VCC)

VCC

CE1,

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