Mitsubishi MF32M1-J9CATXX, MF365A-J9CATXX, MF3513-J9CATXX, MF34M1-J9CATXX, MF3257-J9CATXX Datasheet

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MITSUBISHI MEMORY CARD

STATIC RAM CARDS

8/16-bit Data Bus

Static RAM Card

Connector Type

Two- piece 68-pin

1. DESCRIPTION

Mitsubishi’s Static RAM cards provide large memory capacities on a device approximately the size of a credit card (85.6mm×54mm×3.3mm). The cards use a 8/16 bit data-bus. Available in 64KB, 128KB, 256KB, 512KB, 1 MB, 2 MB and 4 MB capacities, Mitsubishi’s SRAM cards conform to the PC Card Standard. Mitsubishi achieved high density memory, while maintaining credit size by using a thin small outline packaging technology (TSOP). The TSOP surpasses conventional memory card chip-on-board packaging technology where larger, surface-mount devices result in a tradeoff between card size and optimum memory density. The TSOP, with external leads spaced on 20-mil centers, is over four times smaller than standard equivalent pin count surface-mount packages. This allows up to 8 memory ICs (plus interface circuitry) to be mounted in a card that in only 3.3mm thick.

MF365A-J9CATXX MF3129-J9CATXX MF3257-J9CATXX MF3513-J9CATXX MF31M1-J9CATXX MF32M1-J9CATXX MF34M1-J9CATXX

2. FEATURES

nUses TSOP (Thin Small Outline Package) to achieve very high memory density coupled with high reliability, without enlarging card size

nElectrostatic discharge protection to 15kV nBuffered interface nWrite protect switch n68pin nBuilt-in auxiliary battery

3. APPLICATIONS

nOffice automation nData Communication nComputers nIndustrial nTelecommunications nConsumer

4. PRODUCT LIST

Item Memory Data Bus Attribute Auxiliary Type name capacity width(bits) memory battery MF365A-J9CATXX 64KB MF3129-J9CATXX 128KB MF3257-J9CATXX 256KB MF3513-J9CATXX 512KB 8/16 NO YES MF31M1-J9CATXX 1MB MF32M1-J9CATXX 2MB MF34M1-J9CATXX 4MB

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1/14 Apr. 1999 Rev. 1.1

MITSUBISHI MEMORY CARD

STATIC RAM CARDS

5. SUMMARY

MF3XXX-J9CATXX series is the Static RAM cards which has 8/16 bit changeable data-bus width. The card has a replaceable lithium main battery to maintain data in memory and has an auxiliary battery to maintain data in memory while the main battery is replaced. When the card is not use or the supply voltage drops, the main battery will automatically maintain data in memory.

6. FUNCTIONAL DESCRIPTION

The function of the card is determined by the combination of the following five control signals, REG#, CE1#, CE2#, OE#, WE#; active low signals. (Please refer to section 10 FUNCTION TABLE on page 5)

((1))COMMON MEMORY FUNCTION

When REG# signal is high level, the common memory area is selected.

((a))READ MODE

To read, WE# is set high level and CE1# or CE2# is set low level and the memory address is applied at inputs A0-A21(4MB). Setting OE# low level executes the reading with output at data-bus. It is available to make the following functions according to the combination of CE1# and CE2#. When CE1# is set low level and CE2# is set high level, the card operates as an 8 bit data-bus width card. The data can be dealt with lower data-bus(D0-D7). When both CE1# and CE2# are set low level, the card operates as a 16 bit data-bus width card. At this mode LSB of address-bus (A0) is ignored. In addition odd byte can be accessed through upper data-bus(D8-D15) when CE1# is set high level and CE2# is set low level. This mode is useful when handling only odd bytes in the 16 bit data-bus interface system (A0 is ignored). When both CE1# and CE2# are set high level, the card becomes a standby mode where the card consumes low power and the data-bus is placed in high impedance state (above functions of CE1# and CE2# are the same as in the following modes). When both OE# and WE# are set high level, the card becomes a output disable mode and the data-bus is placed in high impedance state.

((b))WRITE MODE

To write, the memory address is first applied at inputs A0-A21(4MB) and the data is applied at output pins. Setting CE1# or CE2# low level, WE# low level and OE# high level executes the writing.

((2))ATTRIBUTE MEMORY FUNCTION

When REG# is set low level, the attribute memory area is selected. MF3XXX-J9CATXX series have no attribute memory but outputs FFh on the lower data-bus(D0-D7) when the following conditions are applied (a)setting CE1# low, CE2# high, OE# low, WE# high and A0 low (b)setting CE1# low, CE2# low, OE# low and WE# high

((3))BATTERY

When the card is used for long periods of time, eventually battery exhaustion occurs. If such a situation is encountered, replace any exhausted battery with a new one as directed in section 21.2 ″REPLACING BATTERY″ (page 14). The replacement battery model number is indicated under section 21 ″BATTERY SPECIFICATIONS″(page 14).

7. WRITE PROTECT MODE

When the write protect switch is switched on, this card goes into a write protect mode that can read but not write data. In this mode, WP pin becomes “H” level. At the shipment the write protect switch is switched off (Normal mode : The card can be written ; WP pin indicates “L” level).

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2/14 Apr. 1999 Rev. 1.1

MITSUBISHI MEMORY CARD

GND

Ground

GND

Ground

A17 (NC for < 128KB types)

A18 (NC for < 256KB types)

A19 (NC for < 512KB types) Address

A20 (NC for < 1MB type) input

A21 (NC for < 2MB type)

STATIC RAM CARDS

8. PIN ASSIGNMENTS

Pin Pin

Symbol

No. No.

Function

Symbol

Function

2 D3 36 CD1# Card detect 1 3 D4 37 D11 4 D5 Data I/O 38 D12 5 D6 39 D13 Data I/O 6 D7 40 D14 7 CE1# Card enable 1 41 D15 8 A10 Address input 42 CE2# Card enable 2

9 OE# Output enable 43 NC 10 A11 44 NC No connection 11 A9 45 NC 12 A8 Address input 46 A17 13 A13 47 A18 14 A14 48 A19 15 WE# Write enable 49 A20 16 NC No connection 50 A21 17 VCC Power supply voltage 51 VCC Power supply voltage 18 NC No connection 52 NC 19 A16 A16 (NC for 64KB type) 53 NC 20 A15 54 NC 21 A12 55 NC 22 A7 56 NC No connection 23 A6 57 NC 24 A5 Address input 58 NC 25 A4 59 NC 26 A3 60 NC 27 A2 61 REG# Attribute memory select 28 A1 62 BVD2 Battery voltage detect 2 29 A0 63 BVD1 Battery voltage detect 1 30 D0 64 D8 31 D1 Data I/O 65 D9 Data I/O 32 D2 66 D10 33 WP Write protect 67 CD2# Card detect 2 34 GND Ground 68 GND Ground

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3/14 Apr. 1999 Rev. 1.1

9. BLOCK DIAGRAM (4MB) (MF34M1-J9CATXX)

A21

WP#

WRITE PROTECT

POWER CONTROLLER

DECODER

CR2025

MITSUBISHI MEMORY CARD

STATIC RAM CARDS

CE1# CE2#

WE# OE#

REG#

A20 A0

A19 A18 A17 A16 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1

OFF

CD1# CD2#

ADDRESS-

BUS

BUFFERS

MODE

CONTROL

LOGIC

Auxiliary battery

D15

CS#

COMMON MEMORY

4Mbit SRAM×8

OE# WE#

TO INTERNAL POWER SUPPLY

VOLTAGE DETECTOR

DATA-BUS

BUFFERS

VCC

BVD2

D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0

BVD1

GND

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MITSUBISHI MEMORY CARD

STATIC RAM CARDS

10. FUNCTION TABLE

Mode REG# CE1# CE2# OE# WE# A0 I/O (D15~D8) I/O (D7~D0) Icc Standby X H H X X X High-impedance High-impedance standby Read A (16bit) common Write A (16bit) common Read B (8bit) common

H L L L H X Odd Byte

Data out

H L L H L X Odd Byte

Data in

Even Byte Data out Even Byte Data in

H L H L H L High-impedance Even Byte

Data out

H L H L H H High-impedance Odd Byte

Active

Data out

Write B (8bit)

H L H H L L High-impedance Even Byte Data in Active common H L H H L H High-impedance Odd Byte Data in Active Read C (8bit)

common Write C (8bit) common

H H L L H X Odd Byte

Data out

H H L H L X Odd Byte

Data in

High-impedance Active

Output disable X X X H H X High-impedance High-impedance Active Read A (16bit) attribute Read B (8bit) attribute

L L L L H X Data out

(unknown)

Data out (FFh)

L L H L H L High-impedance Data out

(FFh)

L L H L H H High-impedance Data out

Active

(unknown) Read C (8bit) attribute

Note 1 : H=VIH, L=VIL, X=VIH or VIL

L H L L H X Data out

(unknown)

High-impedance Active

11. ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Conditions Ratings Unit Vcc Supply voltage -0.3~6.0 V VI Input voltage With respect to GND -0.3~VCC+0.3 V VO Output voltage 0~VCC V Topr1 Operating temperature 1 Read, Write Operation 0~60 °C Topr2 Operating temperature 2 Data retention 0~60 °C Tstg Storage temperature Excludes data retention -20~70 °C

12. RECOMMENDED OPERATING CONDITIONS (Ta=0~55°C, unless otherwise noted)

Symbol

Parameter

Min. Typ. Max.

Limits

Unit

Vcc Vcc Supply voltage 4.75 5.0 5.25 V GND System ground 0 V VIH High input voltage 2.4 VCC V VIL Low input voltage 0 0.8 V

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5/14 Apr. 1999 Rev. 1.1

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