MITSUBISHI M81708FP Technical data

MITSUBISHI SEMICONDUCTORS <HVIC>
M81708FP
HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION
M81708FP is high voltage Power MOSFET and IGBT mod­ule driver for half bridge applications.
FEATURES
¡FLOATING SUPPLY VOLTAGE ................................. 600V
¡OUTPUT CURRENT .............................. +120mA/–250mA
APPLICATIONS
MOSFET and IGBT module inverter driver for PDP, HID lamp, refrigerator, air-conditioner, washing machine, AC­servomotor and general purpose.
BLOCK DIAGRAM
PIN CONFIGURATION (TOP VIEW)
LO
1
2
GND
3
CC
V
4
NC
5
NC
6
S
V
7
V
B
8
HO
NC:NO CONNECTION
Outline:16P2N
16
NC
15
NC
14
LIN
13
NC
HIN
12
NC
11
NC
10
NC
9
HIN
LIN
7
V
8
6
3
1
2
B
HO
V
S
V
CC
LO
GND
FILTER
UV DETECT
FILTER
INTER
LOCK
RQ
R
S
HV
V
REG
V
12
14
REG/VCC
LEVEL
SHIFT
V
REG/VCC
LEVEL
SHIFT
LEVEL SHIFT
PULSE
GEN
UV DETECT
DELAY
Mar. 2006
MITSUBISHI SEMICONDUCTORS <HVIC>
M81708FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified)
Symbol Parameter Test conditions Ratings Unit
VB
VS
VBS
VHO
VCC
VLO
VIN
dVS/dt
Pd
K q
Rth(j-c)
Tj
Topr
Tstg
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Input Voltage
Allowable Offset Voltage Transient
Package Power Dissipation
Linear Derating Factor
Junction-Case Thermal Resistance
Junction Temperature
Operation Temperature
Storage Temperature
V
BS = VB–VS
HIN, LIN
Ta = 25°C, On Board
Ta > 25°C, On Board
–0.5 ~ 624
V
B–24 ~ VB+0.5
–0.5 ~ 24
VS–0.5 ~ VB+0.5
–0.5 ~ 24
–0.5 ~ VCC+0.5
–0.5 ~ VCC+0.5
±50
0.84
8.4
50
–20 ~ 125
–20 ~ 100
–40 ~ 125
V
V
V
V
V
V
V
V/ns
W
mW/°C
°C/W
°C
°C
°C
RECOMMENDED OPERATING CONDITIONS
Symbol UnitParameter Test conditions
VB
VS
VBS
VHO
VCC
VLO
VIN
* For proper operation, the device should be used within the recommended conditions.
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Input Voltage
B > 10V
V
VBS = VB–VS
HIN, LIN
THERMAL DERATING FACTOR CHARACTERISTIC (MAXIMUM RATING)
2.0
1.5
1.0
0.5
Limits
Min. Typ. Max.
VS+10
–5
10
VS
10
0
0
VS+20
500
20
VB
20
VCC
VCC
V
V
V
V
V
V
V
Package Power Dissipation Pd (W)
0
Temperature Ta (°C)
1251007550250
Mar. 2006
MITSUBISHI SEMICONDUCTORS <HVIC>
HIGH VOLTAGE HALF BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS (Ta = 25°C, VCC = VBS ( = VB–VS) = 15V, unless otherwise specified)
Symbol UnitParameter Test conditions
I
FS
IBS
ICC
VOH
VOL
VIH
VIL
IIH
IIL
VBSuvr
VBSuvh
tVBSuv
VCCuvr
VCCuvh
tVCCuv
IOH
IOL
ROH
ROL
tdLH(HO)
tdHL(HO)
trH
tfH
tdLH(LO)
tdHL(LO)
trL
tfL
tdLH
tdHL
* Typ. is not specified.
Floating Supply Leakage Current
BS Standby Current
V
CC Standby Current
V
High Level Output Voltage
Low Level Output Voltage
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
High Level Input Bias Current
Low Level Input Bias Current
BS Supply UV Reset Voltage
V
BS Supply UV Hysteresis Voltage
V
BS Supply UV Filter Time
V
CC Supply UV Reset Voltage
V
CC Supply UV Hysteresis Voltage
V
CC Supply UV Filter Time
V
Output High Level Short Circuit Pulsed Current
Output Low Level Short Circuit Pulsed Current
Output High Level On Resistance
Output Low Level On Resistance
High Side Turn-On Propagation Delay
High Side Turn-Off Propagation Delay
High Side Turn-On Rise Time
High Side Turn-Off Fall Time
Low Side Turn-On Propagation Delay
Low Side Turn-Off Propagation Delay
Low Side Turn-On Rise Time
Low Side Turn-Off Fall Time
Delay Matching, High Side and Low Side Turn-On
Delay Matching, High Side and Low Side Turn-Off
B = VS = 600V
V
= LIN = 0V
HIN
= LIN = 0V
HIN
O = 0A, LO, HO
I
O = 0A, LO, HO
I
HIN, LIN
HIN, LIN
IN = 5V
V
IN = 0V
V
O = 0V, VIN = 5V, PW < 10µs
V
O = 15V, VIN = 0V, PW < 10µs
V
O = –20mA, ROH = (VOH–VO)/IO
I
IO = 20mA, ROL = VO/IO
CL = 1000pF between HO-VS
CL = 1000pF between HO-VS
CL = 1000pF between HO-VS
CL = 1000pF between HO-VS
CL = 1000pF between LO-GND
= 1000pF between LO-GND
CL
= 1000pF between LO-GND
CL
= 1000pF between LO-GND
CL
dLH(HO)–tdLH(LO)|
|t
dHL(HO)–tdHL(LO)|
|t
Min. Typ.* Max.
0.2
14.9
2.1
0.6
8.0
0.3
8.0
0.3
120
250
105
95
105
95
Limits
0.2
0.5
3.0
1.5
8.9
0.7
7.5
8.9
0.7
7.5
200
350
140
130
100
140
130
100
M81708FP
5
35
15
50
50
1.0
0.5
1.0
0.1
4.0
2.0
20
2
9.8
9.8
70
30
175
165
220
80
175
165
220
80
30
30
µA
mA
mA
V
V
V
V
µA
µA
V
V
µs
V
V
µs
mA
mA
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Mar. 2006
MITSUBISHI SEMICONDUCTORS <HVIC>
HIGH VOLTAGE HALF BRIDGE DRIVER
FUNCTION TABLE (X: H or L)
HIN Behavioral state
L
L
H
H
X
X
L
H
Note : “L” state of VBS UV, VCC UV means that UV trip voltage.
In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”.
TIMING DIAGRAM
1.Input/Output Timing Diagram HIGH ACTIVE (When input signal (HIN or LIN) is “H”, then output signal (HO or LO) is “H”.) In the case of both input signals (HIN and LIN) are “H”, output signals (HO and LO) become “L”.
LIN VBS UV VCC UV HO LO
L
H
L
H
L
H
X
X
H
H
H
H
L
L
H
H
H
H
H
H
H
H
L
L
L
L
H
L
L
L
L
L
LO = HO = Low
L
LO = High
H
HO = High
L
LO = HO = Low
L
HO = Low, VBS UV tripped
L
H
LO = High, VBS UV tripped
L
LO = Low, V
L
HO = LO = Low, VCC UV tripped
CC UV tripped
M81708FP
HIN
LIN
HO
LO
Mar. 2006
2.VCC (VBS) Supply Under Voltage Lockout Timing Diagram When V
CC Supply Voltage keeps lower UV Trip Voltage (VCCuvt = VCCuvr–VCCuvh) for VCC Supply UV Filter Time, output
signal becomes “L”. And then, when V
CC Supply Voltage is higher than UV Reset Voltage, output signal LO becomes
“H”.
V
CC
CCuvt
V
t
VCCuv
LO
LIN
MITSUBISHI SEMICONDUCTORS <HVIC>
M81708FP
HIGH VOLTAGE HALF BRIDGE DRIVER
V
CCuvh
V
CCuvr
When V
CC Supply Voltage keeps lower UV Trip Voltage (VCCuvt = VCCuvr–VCCuvh) for VCC Supply UV Filter Time, output
signal becomes “L”. And then, when V signal HO becomes “H”.
V
BS(H)
LIN
(L)
V
CC
V
CCuvt
HO
HIN
When V
BS Supply Voltage keeps lower UV Trip Voltage (VBSuvt = VBSuvr–VBSuvh) for VBS Supply UV Filter Time, output
signal becomes “L”. And then, V
BS Supply Voltage is higher than UV Reset Voltage, output signal HO keeps “L” until
next input signal HIN is “H”.
CC Supply Voltage is higher than UV Reset Voltage, input signal (LIN) is L; output
V
CCuvh
V
t
VCCuv
CCuvr
V
HO
HIN
BS
V
BSuvt
t
VBSuv
V
BSuvh
V
BSuvr
Mar. 2006
3.Allowable Supply Voltage Transient It is recommended that supplying V
ting off V
BS firstly and shutting off VCC secondly. At the time of starting VCC and VBS, power supply should be increased
CC firstly and supplying VBS secondly. In the case of shutting off supply voltage, shut-
slowly. If it is increased rapidly, output signal (HO or LO) may be “H”.
PACKAGE OUTLINE
MITSUBISHI SEMICONDUCTORS <HVIC>
M81708FP
HIGH VOLTAGE HALF BRIDGE DRIVER
16P2N-A
EIAJ Package Code
SOP16-P-300-1.27
E
H
G
JEDEC Code
16
E
D
e
z
Z
1
Detail G
Weigh t(g)
0.2
9
81
b
y
F
x
M
Lead Material
Cu Alloy
A
1
L
A
2
Detail F
e
b
2
2
1
e
Recommended Mount Pad
Dimension in Millimeters
Symbol
A
1
L
c
Min Nom Max
A
A
1
0
2
A
.350
b
.180
c
D
.010
E
.25
e
– .57
H
E
.40
L
L
1
z
1
Z
x
y
0° –8°
b
2
–.760–
e
1
I
2
.271
0.605
I
.12 .20
.10
.81
.50
.40
.250
.20
.210
.110
.45
.35
.271
.18
.87
.80
.60
.251
0.755
0.25
.10
.627 –
Plastic 16pin 300mil SOP
Mar. 2006
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