MITSUBISHI M81016P, M81016FP, M81016KP Technical data

MITSUBISHI SEMICONDUCTOR <MOS-ARRAY>
M81016P/FP/KP
OCTAL D-TYPE FLIP-FLOP DRIVER WITH CLEAR
DESCRIPTION
M81016 is octal D-type flip-flop driver by 20-pin package. It has 8 same circuit units which is composed of D-type flip-flop logic circuit and high voltage NchMOS output transistor. M81016 has a common direct clear input and a common clock input.
FEATURES
Lineup with three packages
High breakdown voltage (BVDSX 40V)
Drain output current (IDS(max) = 200mA)
With input protection diodes
Pin assignment of input-output flow through
Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
LED drive
FUNCTION
The common direct clear input and common clock input are connected to every circuit unit by the same way. Signal at the D inputs is transferred to Y outputs by D-type flip-flops on the positive-going edge of the clock pulse. If CLR is set to “L”, outputs Y1-Y8 will be altogether set to “H” regardless of D1-D8 and CLK. The maximum drain current of an output is 200mA. The maximum between drain-source is 40V. Moreover, M81016FP/KP can save space with mini-flat package.
PIN CONFIGURATION (TOP VIEW)
1
CLR
2
D1
3
D2
4
D3
5
D4
INPUT OUTPUT
D5
D6
D7
D8
CLK
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
Package type 20P4B(P)
20P2N-A(FP) 20P2E-A(KP)
DD
V
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
GND
LOGIC DIAGRAM (POSITIVE LOGIC)
Y2 18
D
Q
CK
R
CLK
CLR
Y1 19
D
Q
D1
CK
R
2
D2
3
10
1
D3
Y3 17
D
Q
CK
R
4
D4
5
Y4 16
D
Q
CK
R
6
D5
Y5 15
D
Q
CK
R
7
D6
Y6 14
D
Q
CK
R
8
D7
Y7 13
D
Q
CK
R
9
D8
Y8 12
V
DD
20
D
Q
CK
R
11
GND
Oct.2004
MITSUBISHI SEMICONDUCTOR <MOS-ARRAY>
M81016P/FP/KP
OCTAL D-TYPE FLIP-FLOP DRIVER WITH CLEAR
FUNCTION TABLE (EACH CHANNEL)
CLR
L
H
H
H
H
H : High level
L : Low level
INPUT
CLK
X
↑ ↑
L
D
X
L
H
X
X
OUTPUT : Y
H
H
L
Latched
Latched
TIMING DIAGRAM
CLK
D
CLR
X : Irrelevant
Y
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol Parameter Conditions Unit VDD
VDS
VI
IDS
Pd
Topr
Tstg
Supply voltage
Drain-to-source voltage
Input voltage
Drain output current
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L Ta = 25°C,
when mounted on board
M81016P
M81016FP
M81016KP
Ratings
7
0.5 ~ +40
0.5 ~ V
DD
200
1.47
1.10
0.68
40 ~ +85
55 ~ +125
V
V
V
mA
W
°C °C
5V
GND
5V
GND
5V
GND
OH
V
V
OL
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VDD
VDS
VIH
VIL
IDS
VIN
tr,t f
tsu
th
tw
f
Supply voltage
Drain-to-source voltage
H input voltage
L input voltage
Drain output current (Current per 1 circuit when 8 circuits are com­ing on simultaneously)
Input voltage
Rise time, Fall time, drain output
Setup time before CLK
Hold time, data after CLK
Pulse duration
Clock frequency
Parameter
Conditions
P
FP
KP
Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 34%
Duty Cycle no more than 100%
Duty Cycle no more than 18%
Duty Cycle no more than 100%
VDD = 4.5V
VDD = 4.5V
VDD = 4.5V
VDD = 4.5V
VDD = 4.5V
Limits
min typ max
DD
5.0
4.5
0
0.7V
0
0
0
0
0
0
0
0
0
20
5
40
5.5
40
DD
V
0.3VDD
200
135
200
120
200
95
VDD
500
— — —
20
Unit
V
V
V
V
mA
V
ns
ns
ns
ns
MHz
Oct.2004
MITSUBISHI SEMICONDUCTOR <MOS-ARRAY>
OCTAL D-TYPE FLIP-FLOP DRIVER WITH CLEAR
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, VDD = 5V, Ta = 25°C)
Symbol UnitParameter Test conditions
(BR)DSX
V
IDSX
IIH
IIL
ICC
VDS
RDS(on)
SWITCHING CHARACTERISTICS (VDD = 5V, Ta = 25°C)
Symbol UnitParameter Test conditions
TLH
t
tTHL
tPLH
tPHL
PLH(R)
t
Drain-source breakdown voltage
Drain-source leakage current
“H” input current
“L” input current
Supply current
“L” output voltage
Drain-source on-state resistance
Low-level to high-level and high-level to low-level output transition time
Low-level to high-level and high-level to low-level output propagation time (CLK)
Low-level to high-level output propagation time (CLR)
DS = 1mA
I
V
DS = 40V
VDD = 5.5V, VI = 5.5V
VDD = 5.5V, VI = 0V
VDD = 5.5V
VI = 5.5V or 0V
IDS = 100mA, VDD = 4.5V
IDS = 200mA, VDD = 4.5V
IDS = 100mA, VDD = 4.5V
CL = 30pF (Note 1)
All outputs off
All outputs on
M81016P/FP/KP
Limits
min typ max
40
min typ max
0.002
0.005
0.005
0.005
0.005
0.25
0.51
Limits
10
35
30
35
2.5
3
5
1
–1
5
5
0.38
0.77
3.8
V
µA µA µA
µA
V
ns
ns
ns
ns
ns
Oct.2004
NOTE 1 TEST CIRCUIT
PG
PG
CLR
D
CLK
VDD VCC
V
DD
Y
GND
MITSUBISHI SEMICONDUCTOR <MOS-ARRAY>
M81016P/FP/KP
OCTAL D-TYPE FLIP-FLOP DRIVER WITH CLEAR
R
L
(1) Pulse generator (PG) characteristics : PRR = 1MHz,
Duty Cycle = 50%, t
OUTPUT
(2) Output conditions : R
(3) Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes.
L
C
r = 6ns, tf = 6ns, Zo = 50, VI = 5V
L = 240, VCC = 24V, VDD = 5V
TIMING DIAGRAM
CLK
CLK
5V
D
GND
5V
50%
50%
GND
t
10%
t
TLH
50%
PLH
90%
V
CC
V
OL
t
PHL
90%
Y
t
THL
50%
10%
SWITCHING TIMES
t
r
90%
90%
50%
10%
t
w
D
50%
t
su
h
t
50%
50%
t
f
10%
5V
GND
5V
GND
INPUT SETUP AND HOLD WAVEFORMS
Oct.2004
TYPICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR <MOS-ARRAY>
M81016P/FP/KP
OCTAL D-TYPE FLIP-FLOP DRIVER WITH CLEAR
THERMAL DERATING FACTOR
2.0
1.5
CHARACTERISTICS
M81016P
M81016FP
1.0
M81016KP
0.5
0.764
0.572
0.354
POWER DISSIPATION Pd (W)
0
0 25 50 75 85 100
AMBIENT TEMPERATURE Ta (°C)
DUTY CYCLE-DRAIN CURRENT
CHARACTERISTICS
200 q~u
(M81016P)
160
120
DRAIN-SOURCE ON-STATE RESISTANCE VS DRAIN CURRENT CHARACTERISTICS 5
DD=4.5V
V
4
Ta=85°C
3
Ta=25°C Ta=–40°C
2
1
RESISTANCE RDS(ON) ()
DRAIN-SOURCE ON-STATE
0
110
1
10
DRAIN CURRENT I
2
2 10
DS (mA)
3
35723 5723 57
DUTY CYCLE-DRAIN CURRENT
CHARACTERISTICS
i
200
(M81016P)
q~e r
t
160
y u i
120
80
The drain
current values represent the current per circuit.
40
Repeated frequency 10Hz
DRAIN CURRENT IDS (mA)
The value the circle represents the
value of the simultaneously-operated circuit.
Ta=25°C
0
080604020 100
DUTY CYCLE (%)
DUTY CYCLE-DRAIN CURRENT
CHARACTERISTICS
200
(M81016FP)
160
120
80
The drain
current values represent the current per circuit.
Repeated frequency 10Hz
40
DRAIN CURRENT IDS (mA)
The value the circle represents the
value of the simultaneously-operated circuit.
Ta=25°C
0
080604020 100
q~t y u
i
80
The drain
current values represent the current per circuit.
Repeated frequency 10Hz
40
DRAIN CURRENT IDS (mA)
The value the circle represents the
value of the simultaneously-operated circuit.
Ta=85°C
0
080604020 100
DUTY CYCLE (%)
DUTY CYCLE-DRAIN CURRENT
CHARACTERISTICS
200
(M81016FP)
160
120
80
The drain
current values represent the current per circuit.
Repeated frequency 10Hz
40
The value the circle represents the
DRAIN CURRENT IDS (mA)
value of the simultaneously-operated circuit.
Ta=85°C
0
080604020 100
q~w e
r t
y u i
DUTY CYCLE (%)
DUTY CYCLE (%)
Oct.2004
MITSUBISHI SEMICONDUCTOR <MOS-ARRAY>
M81016P/FP/KP
OCTAL D-TYPE FLIP-FLOP DRIVER WITH CLEAR
DUTY CYCLE-DRAIN CURRENT
CHARACTERISTICS
200
(M81016KP)
160
(mA)
DS
120
80
The drain
current values represent the current per circuit.
Repeated frequency 10Hz
40
DRAIN CURRENT I
The value the circle represents the
value of the simultaneously-operated circuit.
Ta=25°C
0
080604020 100
DUTY CYCLE (%)
SWITCHING TIME-AMBIENT TEMPERATURE
CHARACTERISTICS
L
=240Ω,V
R
CC
=24V,VDD=5V VCC=24V,V
t
PLH,tPLH(R)
t
PHL
(ns)
50
40
30
20
t
t
TLH
THL
80–20–40 4020 100060
SWITCHING TIME
10
0
q~e r
t y
u i
DUTY CYCLE-DRAIN CURRENT
CHARACTERISTICS
200
(M81016KP)
160
(mA)
DS
120
80
The drain current values represent the current per circuit.
Repeated frequency 10Hz
40
DRAIN CURRENT I
The value the circle represents the value of the simultaneously-operated circuit.
Ta=85°C
0
080604020 100
DUTY CYCLE (%)
SWITCHING TIME-DRAIN CURRENT
3
10
7 5
3 2
(ns)
2
10
7 5
3 2
1
10
7 5
SWITCHING TIME
3 2
0
10
10
CHARACTERISTICS
DD
=5V,Ta=25°C
TLH
t
t
PLH
t
PHL
t
THL
1
2
335577
10
2
2
10
q w
e
r t y
u
i
3
AMBIENT TEMPERATURE Ta
(°C)
DRAIN CURRENT I
DS
(mA)
Oct.2004
MITSUBISHI SEMICONDUCTOR <MOS-ARRAY>
M81016P/FP/KP
OCTAL D-TYPE FLIP-FLOP DRIVER WITH CLEAR
20P4B
EIAJ Package Code SDIP20-P-300-1.78
SEATING PLANE
JEDEC Code
20
1
LA
Weight(g)
1.0
D
e
b
Lead Material
Alloy 42/Cu Alloy
11
10
1
b
c
E
Symbol
2
A
1
A
A
A
1
2
A
b
b
1
c D E
e
e
1
L
1
e
Dimension in Millimeters
Min Nom Max
––4.5
0.51 – – 3.3
0.38 0.48 0.58
0.9 1.0 1.3
0.22 0.27 0.34
18.8 19.0 19.2
6.15 6.3 6.45 – 1.778 – –7.62–
3.0
0° –15°
Plastic 20pin 300mil SDIP
20P2N-A
EIAJ Package Code
SOP20-P-300-1.27
E
E
H
G
Z
JEDEC Code
20 11
1
Weight(g)
D
e
z
1
Detail G
y
0.26
Cu Alloy
1
e
10
F
A
Symbol
A
A
1
A
2
b
c
D
Lead Material
A
b
x
M
2
A
1
E e
H
E
L
1
L
z
Z
1
L
L
c
Detail F
1
x
y
b
2
e
1
I
2
e
b
2
Recommended Mount Pad
Dimension in Millimeters
Min Nom Max
0
– – –
.10 .81 .40
.350
.20
.180
.612
.512
.35
.25
.271 .87
.57
.60
.40
.251
0.585
– –
0° 8°
.760
.627
.271
2
I
.12 .20
.50 .250 .712 .45
.18 .80
0.735
0.25
.10
– –
Plastic 20pin 300mil SOP
Oct.2004
MITSUBISHI SEMICONDUCTOR <MOS-ARRAY>
M81016P/FP/KP
OCTAL D-TYPE FLIP-FLOP DRIVER WITH CLEAR
20P2E-A
EIAJ Package Code
SSOP20-P-225-0.65
HE
G
JEDEC Code
20 11
E
1
e
Z1
z
D
y
Detail G
10
b
Weight(g)
0.08
x
M
Lead Material
Alloy 42
A
A
2 A1
L1
Detail F
Plastic 20pin 225mil SSOP
e
b2
e1
F
L
c
Recommended Mount Pad
Symbol
Dimension in Millimeters
Min Nom Max
A A1 A
H
L
Z1
b e1
0
2
.170
b
.130
c
D
.46
E
.34
e
.26
E
.30
L
1
z
– –
x
y
0° 10°
2
.350
I2
.01
.10 .151 .220 .150 .56 .44 .650 .46 .50 .01
0.325
– –
.85
I2
.451 .20
.320 .20 .66 .54
.66 .70
0.475
0.13
.10
– –
Oct.2004
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