Mitsubishi M68732L Datasheet
MITSUBISHI RF POWER MODULE
Nov. ´97
1
123454532
ηT
ρin
°C
°C
12345
M68732L
SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO
OUTLINE DRAWING
0.45
6±1
13.7±1
18.8±1
30±0.2
26.6±0.2
21.2±0.2
23.9±1
Dimensions in mm
2-R1.5±0.1
BLOCK DIAGRAM
PIN:
Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO : RF OUTPUT
GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol Parameter Conditions Ratings Unit
VGG≤3.5V, ZG=ZL=50Ω
f=400-430MHz, ZG=ZL=50Ω
f=400-430MHz, ZG=ZL=50Ω
f=400-430MHz, ZG=ZL=50Ω
-30 to +100TC (OP) Operation case temperature
-40 to +110Tstg Storage temperature
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol Parameter Test conditions
f
PO
2fO
Note. Above parameters, ratings, limits and test conditions are subject to change.
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
-
Stability
-
Load VSWR tolerance
VDD=7.2V,
VGG=3.5V,
Pin=50mW
ZG=50Ω, VDD=4-19.2V,
Load VSWR<4:1
VDD=9.2V, Pin=50mW,
PO=7W (VGG adjust), ZL=20:1
No parasitic oscillation
No degradation or
destroy
Limits
Min Max
400 430
7
45
-25
4
V9.2VDD Supply voltage
V4VGG Gate bias voltage
mW70Pin Input power
W10PO Output power
Unit
MHz
W
%
dBc
-
-
-
SILICON MOS FET POWER AMPLIFIER, 400-430MHz, 7W, FM PORTABLE RADIO
Nov. ´97
ηTPOρin
ηT;400MHz
ηT;430MHz
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
10
VGG=3.5V, VDD=7.2V, Pin=17dBm
9
8
7
6
5
4
3
2
1
0
390 400 410 420 430 440
FREQUENCY f (MHz)
75
70
65
60
55
50
45
40
35
30
25
MITSUBISHI RF POWER MODULE
M68732L
OUTPUT POWER, TOTAL EFFICIENCY
9
8
7
6
5
4
3
2
1
0
-10 -5 0 5 10 20
VS. INPUT POWER
VGG=3.5V, VDD=7.2V
PO;400MHz
PO;430MHz
ηT;430MHz
15
INPUT POWER Pin (dBm)
90
80
70
60
50
40
30
20
10
0
OUTPUT POWER, TOTAL EFFICIENCY
10
9
8
7
6
5
4
3
2
0
0 0.5 1.5 2.5 3.5 4
VS. GATE VOLTAGE
VDD=7.2V, Pin=17dBm
PO;400MHz
PO;430MHz
ηT;400MHz
1 2 3
GATE VOLTAGE VGG (V)
100
90
80
70
60
50
40
30
20
101
0
OUTPUT POWER, TOTAL EFFICIENCY
14
13
11
10
9
8
7
6
5
4
3
2
1
0
VS. SUPPLY VOLTAGE
VGG=3.5V, Pin=17dBm
PO;400MHz
PO;430MHz
ηT;400MHz
ηT;430MHz
3 5 7 9
4 6 8
SUPPLY VOLTAGE VDD (V)
90
85
8012
75
70
65
60
55
50
45
40
35
30
25
20
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