Mitsubishi M68732H Datasheet

MITSUBISHI RF POWER MODULE
Nov. ´97
123454532
ηT
ρin
°C
°C
12345
M68732H
SILICON MOS FET POWER AMPLIFIER, 450-470MHz, 7W, FM PORTABLE RADIO
OUTLINE DRAWING
0.45
6±1
13.7±1
18.8±1
30±0.2
26.6±0.2
21.2±0.2
23.9±1
Dimensions in mm
2-R1.5±0.1
BLOCK DIAGRAM
PIN:
Pin : RF INPUT VGG : GATE BIAS SUPPLY VDD : DRAIN BIAS SUPPLY PO : RF OUTPUT GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol Parameter Conditions Ratings Unit
VGG3.5V, ZG=ZL=50
f=450-470MHz, ZG=ZL=50 f=450-470MHz, ZG=ZL=50 f=450-470MHz, ZG=ZL=50
-30 to +100TC (OP) Operation case temperature
-40 to +110Tstg Storage temperature
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50 unless otherwise noted)
Symbol Parameter Test conditions
f PO
2fO
Note. Above parameters, ratings, limits and test conditions are subject to change.
Frequency range Output power Total efficiency
2nd. harmonic Input VSWR
-
Stability
-
Load VSWR tolerance
VDD=7.2V, VGG=3.5V, Pin=50mW
ZG=50, VDD=4-9.2V, Load VSWR<4:1
VDD=9.2V, Pin=50mW, PO=7W (VGG adjust), ZL=20:1
No parasitic oscillation No degradation or
destroy
Limits Min Max 450 470
7
43
-25 4
V9.2VDD Supply voltage V4VGG Gate bias voltage
mW70Pin Input power
W10PO Output power
Unit
MHz
W %
dBc
-
-
-
SILICON MOS FET POWER AMPLIFIER, 450-470MHz, 7W, FM PORTABLE RADIO
Nov. ´97
ηT
ηT;450MHz
ηT;470MHz
ηT;470MHz
ηT;470MHz
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
10
VGG=3.5V, VDD=7.2V, Pin=17dBm
9 8 7 6 5 4 3 2 1 0
440 450 460 470 480
FREQUENCY f (MHz)
PO
ρin
70 65 60 55 50 45 40 35 30 25 20
MITSUBISHI RF POWER MODULE
M68732H
OUTPUT POWER, TOTAL EFFICIENCY
9 8 7 6 5 4 3 2 1 0
-10 -5 0 5 10 20
VS. INPUT POWER
VGG=3.5V, VDD=7.2V
PO;450MHz
PO;470MHz
15
INPUT POWER Pin (dBm)
90 80 70 60 50 40 30 20 10 0
OUTPUT POWER, TOTAL EFFICIENCY
10
9 8 7 6 5 4 3 2
0
0 0.5 1.5 2.5 3.5 4
VS. GATE VOLTAGE
VDD=7.2V, Pin=17dBm
PO;450MHz
PO;470MHz
ηT;450MHz
1 2 3
GATE VOLTAGE VGG (V)
100 90 80 70 60 50 40 30 20 101 0
OUTPUT POWER, TOTAL EFFICIENCY
14 13
11 10
9 8 7 6 5 4 3 2 1 0
VS. SUPPLY VOLTAGE
VGG=3.5V, Pin=17dBm
PO;450MHz
PO;470MHz
ηT;450MHz
3 5 7 9
4 6 8
SUPPLY VOLTAGE VDD (V)
85 80 7512 70 65 60 55 50 45 40 35 30 25 20 15
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