Mitsubishi M68731L Datasheet
MITSUBISHI RF POWER MODULE
Nov. ´97
1
123454532
ηT
ρin
°C
°C
12345
M68731L
SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO
OUTLINE DRAWING
0.45
6±1
13.7±1
18.8±1
30±0.2
26.6±0.2
21.2±0.2
23.9±1
Dimensions in mm
2-R1.5±0.1
BLOCK DIAGRAM
PIN:
Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO : RF OUTPUT
GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol Parameter Conditions Ratings Unit
VGG≤3.5V, ZG=ZL=50Ω
f=135-155MHz, ZG=ZL=50Ω
f=135-155MHz, ZG=ZL=50Ω
f=135-155MHz, ZG=ZL=50Ω
-30 to +100TC (OP) Operation case temperature
-40 to +110Tstg Storage temperature
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted)
Symbol Parameter Test conditions
f
PO
2fO
Note. Above parameters, ratings, limits and test conditions are subject to change.
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
-
Stability
-
Load VSWR tolerance
VDD=7.2V,
VGG=3.5V,
Pin=50mW
ZG=50Ω, VDD=4-9.2V,
Load VSWR<4:1
VDD=9.2V, Pin=50mW,
PO=7W (VGG adjust), ZL=20:1
No parasitic oscillation
No degradation or
destroy
Limits
Min Max
135 155
7
50
-20
4
V9.2VDD Supply voltage
V4VGG Gate bias voltage
mW70Pin Input power
W10PO Output power
Unit
MHz
W
%
dBc
-
-
-
SILICON MOS FET POWER AMPLIFIER, 135-155MHz, 7W, FM PORTABLE RADIO
Nov. ´97
ηT
ηT
ηT
ηT
ηT
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
14
VDD=7.2V
13
VGG=3.5V
12
Pin=50mW
11
10
9
8
7
6
5
4
3
2
1
0
130 140 150 180
FREQUENCY f (MHz)
PO
ρin
160 170
90
80
70
60
50
40
30
20
MITSUBISHI RF POWER MODULE
OUTPUT POWER, TOTAL EFFICENCY
100
10
1
0.1
0.01 1000.1 10
VS. INPUT POWER
VDD=7.2V
VGG=3.5V
f=135MHz
1
INPUT POWER Pin (mW)
M68731L
PO
ηT
100
10
1
OUTPUT POWER, TOTAL EFFICENCY
100
10
1
0.1
0.01 1000.1 10
OUTPUT POWER, TOTAL EFFICIENCY
16
14
12
10
VS. INPUT POWER
VDD=7.2V
VGG=3.5V
f=155MHz
1
INPUT POWER Pin (mW)
VS. SUPPLY VOLTAGE
f=155MHz
VGG=3.5V
Pin=50mW
PO
100
10
1
100
90
80
70
OUTPUT POWER, TOTAL EFFICIENCY
16
14
12
10
8
6
4
2
0
100
10
VS. SUPPLY VOLTAGE
f=135MHz
VGG=3.5V
Pin=50mW
PO
3 4 6 8 9
OUTPUT POWER, TOTAL EFFICIENCY
VDD=7.2V
Pin=50mW
f=135MHz
5 7
SUPPLY VOLTAGE VDD (V)
VS. GATE VOLTAGE
PO
100
90
80
70
60
50
40
30
20
100
8
6
4
2
0
3 4 6 8 9
SUPPLY VOLTAGE VDD (V)
PO
5 7
60
50
40
30
20
1
0.1
0.5 3.531 1.5 2.5
GATE VOLTAGE VGG (V)
2
10
1
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