Mitsubishi M68731H Datasheet

MITSUBISHI RF POWER MODULE

Nov. ´97

1

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ηT

ρin

°C

°C

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M68731H

SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO

OUTLINE DRAWING

0.45

6±1

13.7±1

18.8±1

30±0.2

26.6±0.2

21.2±0.2

23.9±1

Dimensions in mm

2-R1.5±0.1

BLOCK DIAGRAM

PIN:

Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO : RF OUTPUT
GND: FIN

ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)

Symbol Parameter Conditions Ratings Unit

VGG≤3.5V, ZG=ZL=50Ω

f=150-175MHz, ZG=ZL=50Ω

f=150-175MHz, ZG=ZL=50Ω
f=150-175MHz, ZG=ZL=50Ω

-30 to +100TC (OP) Operation case temperature

-40 to +110Tstg Strage temperature

Note. Above parameters are guarateed independently.

ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted)

Symbol Parameter Test conditions

f
PO

2fO

Note. Above parameters, ratings, limits and test conditions are subject to change.

Frequency range
Output power
Total efficiency

2nd. harmonic
Input VSWR

-

Stability

-

Load VSWR tolerance

VDD=7.2V,
VGG=3.5V,
Pin=50W

ZG=50Ω, VDD=4-9.2V,
Load VSWR<4:1

VDD=9.2V, Pin=50mW,
PO=7W (VGG adjust), ZL=20:1

No parasitic oscillation
No degradation or

destroy

Limits
Min Max
150 175

7

50

-20
4

V9.2VDD Supply voltage
V4VGG Gate bias voltage

mW70Pin Input power

W10PO Output power

Unit

MHz

W
%

dBc

-

-

-

SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO

Nov. ´97

ρin

ηT

ηT

ηTPOηT

TYPICAL PERFORMANCE DATA

OUTPUT POWER, INPUT VSWR,

TOTAL EFFICIENCY VS. FREQUENCY

14

@VDD=7.2V

13

VGG=3.5V

12

Pin=50mW

11
10

9
8
7
6
5
4
3
2
1
0

130 140 150 180

FREQUENCY f (MHz)

PO

160 170

90

80

70

60

50

40

30

20

MITSUBISHI RF POWER MODULE

M68731H

OUTPUT POWER, TOTAL EFFICENCY

100

10

1

0.1

0.01 1000.1 10

VS. INPUT POWER

@VDD=7.2V
VGG=3.5V
f=150MHz

PO

1

INPUT POWER Pin (mW)

100

10

1

OUTPUT POWER, TOTAL EFFICENCY

100

10

1

0.1

0.01 1000.1 10

OUTPUT POWER, TOTAL EFFICIENCY

16
14
12
10

8
6
4

VS. INPUT POWER

@VDD=7.2V
VGG=3.5V
f=175MHz

1

INPUT POWER Pin (mW)

VS. SUPPLY VOLTAGE

@f=175MHz
VGG=3.5V
Pin=50mW

PO

ηT

PO

100

10

1

100
90
80
70
60
50
40

OUTPUT POWER, TOTAL EFFICIENCY

16

14
12
10

8
6
4
2
0

100

10

1

VS. SUPPLY VOLTAGE

@f=150MHz
VGG=3.5V
Pin=50mW

PO

ηT

3 4 6 8 9

OUTPUT POWER, TOTAL EFFICIENCY

@VDD=7.2V
Pin=50mW
f=150MHz

5 7

SUPPLY VOLTAGE VDD (V)

VS. GATE VOLTAGE

100
90
80
70
60
50
40
30
20

100

10

2
0

3 4 6 8 9

5 7

SUPPLY VOLTAGE VDD (V)

30
20

0.1

0.5 3.531 1.5 2.5
GATE VOLTAGE VGG (V)

2

1