Mitsubishi M68710EL Datasheet

MITSUBISHI RF POWER MODULE

Nov. ´97

1

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ηT

ρin

°C

°C

0.45

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M68710EL

SILICON MOS FET POWER AMPLIFIER, 290-330MHz, 2W, FM PORTABLE RADIO

OUTLINE DRAWING

6±1

13.7±1

18.8±1

23.9±1

H46

30±0.2

26.6±0.2

21.2±0.2

2-R1.5±0.1

Dimensions in mm

BLOCK DIAGRAM

PIN:

Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO : RF OUTPUT
GND: FIN

ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)

Symbol Parameter Conditions Ratings Unit

VGG≤3.5V, ZG=ZL=50Ω

f=290-330MHz, ZG=ZL=50Ω
f=290-330MHz, VDD≤9V, ZG=ZL=50Ω
f=290-330MHz, VDD≤9V, ZG=ZL=50Ω

-30 to +110TC (OP) Operation case temperature

-40 to +110Tstg Storage temperature

Note. Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)

Symbol Parameter Test conditions

f
PO

2fO

Note. Above parameters, ratings, limits and test conditions are subject to change.

Frequency range
Output power
Total efficiency

2nd. harmonic
Input VSWR

-

Stability

-

Load VSWR tolerance

VDD=6V,
VGG=3.5V,
Pin=20mW

ZG=50Ω, VDD=4-9V,
Load VSWR<4:1

VDD=9V, Pin=20mW,
PO=3W (VGG adjust), ZL=20:1

No parasitic oscillation
No degradation or

destroy

Limits
Min Max
290 330

2

40

-20
4

V9VDD Supply voltage
V4VGG Gate bias voltage

mW30Pin Input power

W3PO Output power

Unit

MHz

W
%

dBc

-

-

-