Mitsubishi M68701H Datasheet
3.4+0.8
-0.4
2.3+/-0.3
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may
circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELETROSTATIC
SENSITIVE
DEVICES
OUTLINE DRAWING
MITSUBISHI RF POWER MODULE
M68701H
Silicon MOS FET Power Amplifier, 890-960MHz 6W FM /Digital Mobile
Dimensions in mm
BLOCK DIAGRAM
H11
60.5 +/-1
57.5 +/-0.5
50.2+/-1
+0.2
2-R1.6
1 2 3 4
8.3 +/-1
21.3 +/-1
43.3 +/-1
phai 0.45
+/-0.2
51.3 +/-1
0
5
6+/-1
11+/-0.5
14+/-0.5
(6.4)
1
PIN:
1
Pin: RF INPUT
2
VGG: GATE BIAS SUPPLY
3
VDD: DRAIN BIAS SUPPLY
4
PO: RF OUTPUT
5
GND: FIN
32
4
5
MAXIMUM RATINGS (Tc=25deg C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDD SUPPLY VOLTAGE VGG<5V,ZG=ZL=50 ohms 17 V
VGG GATE BIAS VOLTAGE 5.5 V
Pin INPUT POWER f=890-960MHz,ZG=ZL=50 ohms 10 mW
Po OUTPUT POWER f=890-960MHz,ZG=ZL=50 ohms 10 W
Tc(OP) OPERATION CASE TEMPERATURE f=890-960MHz,ZG=ZL=50 ohms -30 to +100 deg. C
Tstg STORAGE TEMPERATURE -40 to +110 deg. C
Note:Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25deg. C ,Zg=Zl=50
UNLESS OTHERWISE NOTED)
ohms
SYMBOL PARAMETER TEST CONDITIONS LIMITS UNIT
MIN MAX
f FREQUENCY RANGE 890 960 MHz
Po OUTPUT POWER VDD=12.5V,VGG=5V,Pin=1mW 6 W
Efficiency TOTAL EFFICIENCY VDD=12.5V, 35 %
2fo 2nd HARMONIC Pout=6W (V
adjust) -30 dBc
GG
VSWR in INPUT VSWR Pin=1mW 4 -
- LOAD VSWR
TOLERANCE
VDD=15.2V,Pin=1mW,Po=6W(VGG adjust)
ZG=50 ohms, LOAD VSWR=20:1
No degradation
or destroy
ABOVE PARAMETERS, RATINGS, LIMITS AND CONDITIONS ARE SUBJECT TO CHANGE .
Keep safety first in your circuit designs!
lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your
flammable material or (iii) prevention against any malfunction or mishap.
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