Mitsubishi M68701 Datasheet
MITSUBISHI RF POWER MODULE
Nov. ´97
12345
ηT
ρin
°C
°C
12345
0
BLOCK DIAGRAM
4
5321
M68701
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO
OUTLINE DRAWING
8.3±1
21.3±1
2-R1.6
43.3±1
60.5±1
57.5±0.5
50.4±1
+0.2
0.45±0.2
51.3±1
Dimensions in mm
PIN:
Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO : RF OUTPUT
GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol Parameter Conditions Ratings Unit
VGG≤3.5V, ZG=ZL=50Ω
f=820-851MHz, ZG=ZL=50Ω
f=820-851MHz, ZG=ZL=50Ω
f=820-851MHz, ZG=ZL=50Ω
-30 to +100TC (OP) Operation case temperature
-40 to +100Tstg Storage temperature
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted)
Symbol Parameter Test conditions
f
PO
2fO
Note. Above parameters, ratings, limits and test conditions are subject to change.
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
-
Stability
-
Load VSWR tolerance
VDD=12.5V,
VGG=5V,
Pin=1mW
ZG=ZL=50Ω, VDD=10-16V,
Load VSWR<4:1
VDD=15.2V, Pin=1mW,
PO=6W (VGG adjust), ZL=20:1
No parasitic oscillation
No degradation or
destroy
Limits
Min Max
820 851
6
35
-30
4
V17VDD Supply voltage
V5.5VGG Gate bias voltage
mW10Pin Input power
W10PO Output power
Unit
MHz
W
%
dBc
-
-
-
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO
Nov. ´97
ηTPOρin
ηT
ηT
ηT
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
10
9
8
7
6
5
4
3
2
1
0
790 800 820 830 840 850 880
FREQUENCY f (MHz)
VDD=12.5V
VGG=5V
Pin=1mW
ZG=ZL=50Ω
860810 870
100
90
80
70
60
50
40
30
20
10
0
MITSUBISHI RF POWER MODULE
OUTPUT POWER, TOTAL EFFICIENCY
100.0
10.0
1.0
0.1
-30 10-15 -10 -5 0 5-25
VS. INPUT POWER
f=820MHz
VDD=12.5V
VGG=5V
ZG=ZL=50Ω
-20
INPUT POWER Pin (dBm)
M68701
1000
PO
ηT
100
10
1
OUTPUT POWER, TOTAL EFFICIENCY
100.0
10.0
1.0
0.1
-30 10-15 -10 -5 0 5-25
OUTPUT POWER, TOTAL EFFICIENCY
10
8
7
6
5
4
3
2
1
0
3.0
VS. INPUT POWER
f=851MHz
VDD=12.5V
VGG=5V
PO
-20
INPUT POWER Pin (dBm)
VS. GATE SUPPLY VOLTAGE
f=851MHz
VDD=12.5V
Pin=1mW
ZG=ZL=50Ω
3.4 3.8 4.2
3.2 3.6 4.0 4.4
GATE SUPPLY VOLTAGE VGG (V)
PO
4.6
4.8
5.0
1000
100
10
1
100
909
80
70
60
50
40
30
20
10
0
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE SUPPLY VOLTAGE
10
f=820MHz
VDD=12.5V
Pin=1mW
8
ZG=ZL=50Ω
7
6
5
4
3
2
1
0
3.0
3.4 3.8 4.2
3.2 3.6 4.0 4.4
GATE SUPPLY VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
18
f=820MHz
16
VGG=5V
Pin=1mW
14
ZG=ZL=50Ω
12
10
8
6
4
2
0
4 6 18
DRAIN SUPPLY VOLTAGE VDD (V)
8 10 12 16
PO
4.6
PO
ηT
14
4.8
5.0
100
909
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
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