Mitsubishi M63994P, M63994FP Datasheet
MITSUBISHI SEMICONDUCTORS <HVIC>
M63994P/FP
HIGH VOLTAGE HALF BRIDGE DRIVER
DESCRIPTION
M63994P/FP is high voltage Power MOSFET and IGBT
module driver for half bridge applications.
FEATURES
¡FLOATING SUPPLY VOLTAGE ................................. 600V
¡OUTPUT CURRENT .............................................±500mA
¡SINGLE INPUT TYPE
¡INTERNALLY SET DEADTIME
¡HALF BRIDGE DRIVER
¡UNDERVOLTAGE LOCKOUT
¡8 LEAD DIP/8 LEAD SOP
APPLICATIONS
MOSFET and IGBT inverter module driver for refrigerator,
air-conditioner, washing machine, AC-servomotor and general purpose.
BLOCK DIAGRAM
PIN CONFIGURATION (TOP VIEW)
VCC
GND
LO
M63994P/FP
1
2
IN
3
4
8
7
6
5
PACKAGE TYPE (8 Lead DIP/8 Lead SOP)
8P4 8P2S
VB
HO
VS
NC
NC:NO CONNECTION
VB
VBS
VCC
UV
UV
INTER
LOCK
HV
LEVEL
SHIFT
PULSE
GEN
IN
DEAD
TIME
DELAY
RQ
R
S
RQ
S
HO
VS
VCC
LO
GND
Sep. 2000
MITSUBISHI SEMICONDUCTORS <HVIC>
M63994P/FP
HIGH VOLTAGE HALF BRIDGE DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Ratings Unit
VB
VS
VHO
VCC
VLO
VIN
dVS/dt
Pt
K q
Rth(j-c)
Tj
Topr
Tstg
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Output Voltage
Logic Input Voltage
Allowable Offset Supply Voltage Transient
Package Power Dissipation
Linear Derating Factor
Junction-Case Thermal Resistance
Junction Temperature
Operation T emperature
Storage Temperature
On Board, Ta = 25°C
On Board, Ta > 25°C
RECOMMENDED OPERATING CONDITIONS
Symbol UnitParameter Test Conditions
VB
VS
VCC
VIN
High Side Floating Supply Voltage
High Side Floating Supply Offset Voltage
Low Side Fixed Supply Voltage
Logic Input Voltage
Min. Typ. Max.
VS+13.5
13.5
–0.5~624
VB–24 ~ VB+0.5
VS–0.5 ~ VB+0.5
–0.5 ~ 24
VS ~ VCC+0.5
–0.5 ~ VCC+0.5
0.85(P)/0.6(FP)
8.5(P)/6.0(FP)
40(P)/50(FP)
–20 ~ +125
–20 ~ +100
–40 ~ +125
Limits
–5
0
±50
—
—
—
—
VS+20
500
20
VCC
V
V
V
V
V
V
V/ns
W
mW/°C
°C/W
°C
°C
°C
V
V
V
V
THERMAL DERATING FACTOR CHARACTERISTICS
(ABSOLUTE MAXIMUM RATINGS)
1.0
On Board
0.8
0.6
8 Lead DIP
0.4
Power Dissipation Pt (W)
0.2
0
8 Lead
SOP
1251007550250
Ambient Temperature Ta (°C)
Sep. 2000
MITSUBISHI SEMICONDUCTORS <HVIC>
HIGH VOLTAGE HALF BRIDGE DRIVER
ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=VBS(=VB–VS)=15V, unless otherwise specified)
Symbol UnitParameter Test conditions
IFS
IBS
ICC
VINH
VINL
VINHYS
IINH
IINL
VBSUVR
VBSUVT
tVBSUV
VCCUVR
VCCUVT
tVCCUV
VOH
VOL
IOH
IOL
ROH
ROL
tDEAD
tdLH
tdHL
tr
tf
Floating Supply Leakage Current
VBS standby Current
VCC standby Current
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
Input Hysteresis Voltage
High Level Input Bias Current
Low Level Input Bias Current
VBS Supply UV Reset Voltage
VBS Supply UV Trip Voltage
VBS Supply Filter Time
VCC Supply UV Reset Voltage
VCC Supply UV Trip Voltage
VCC Supply Filter Time
High Level Output Voltage
Low Level Output voltage
Output High Level Short Circuit Pulsed Current
Output Low Level Short Circuit Pulsed Current
Output High Level On Resistance
Output Low Level On Resistance
Deadtime LO Turn-off to HO Turn-on
& HO Turn-off to LO Turn-on
Output Turn-On Propagation Delay
Output Turn-Off Propagation Delay
Output Turn-On Rise Time
Output Tur n-On Fall Time
VB=VS=600V
VIN=15V
VIN=0V
IO=0A
IO=0A
VO=0V, PW<10µs
VO=15V, PW<10µs
IO=200mA, ROH=(VOH-VO)/IO
IO=200mA, ROL=VO/IO
CL=1000pF between LO(HO) – GND(VS)
CL=1000pF between LO(HO) – GND(VS)
CL=1000pF between LO(HO) – GND(VS)
CL=1000pF between LO(HO) – GND(VS)
CL=1000pF between LO(HO) – GND(VS)
Min. Typ. Max.
—
—
—
—
—
—
—
—
7.5
7.0
—
7.5
7.0
—
13.8
—
—
—
—
—
0.50 0.75 1.00 µs
0.7
0.2
—
—
M63994P/FP
Limits
—
500
500
11
6
5.0
75
—
8.5
8.0
7.5
8.5
8.0
7.5
14.4
—
–0.5
0.5
40
20
1.0
0.3
75
75
1.0
750
750
—
—
—
200
1.0
9.5
9.0
—
9.5
9.0
—
—
0.1
—
—
—
—
1.3
0.4
180
180
µA
µA
µA
V
V
V
µA
µA
V
V
µs
V
V
µs
V
V
A
A
Ω
Ω
µs
µs
ns
ns
INPUT/OUTPUT TIMING DIAGRAM
IN
50%
HO
LO
tdHL(LO) tDEAD(HO) tDEAD(LO)
tdLH(HO)
90%
10%
50%
trtf trtf
90%
10%
tdHL(HO)
tdLH(LO)
90%
10%
90%
10%
Sep. 2000
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