IN
1
2
3
4
5
10
9
8
7
6
FOIN
FO
C
FO
GND
V
CC
OUT
GS
GND
CIN
MITSUBISHI SEMICONDUCTORS <HVIC>
M63975FP
IGBT MOSFET DRIVER
DESCRIPTION
M63975FP is Power MOSFET and IGBT module driver for
half bridge applications.
FEATURES
¡SUPPLY VOLTAGE ......................................................24V
¡OUTPUT CURRENT .............................................±600mA
¡LOW SIDE DRIVER
¡SOP-10
¡BUILT-IN SOFT STOP FACILITY
APPLICATION
MOSFET and IGBT module inverter driver
BLOCK DIAGRAM
PIN CONFIGURATION (TOP VIEW)
NC:NO INTERNAL CONNECTION
Outline 10P2N
10
VCC
1
IN
9
RSQ
D
FOIN
2
FO
3
UV
DETECT
FILTER
+
4
CFO
GND
5
–
R
Q
S
Q
T
S
DELAY
+
–
V
REG
OUT
8
GS
7
GND
6
CIN
Mar. 2003
MITSUBISHI SEMICONDUCTORS <HVIC>
M63975FP
IGBT MOSFET DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Ratings Unit
CC
V
VOUT
IOUT
VGS
IGS
VIN
VFIN
VCIN
VFO
IFO
PD
K q
Tj
Topr
Tstg
Fixed Supply Voltage
Output Voltage 1
Output Current 1
Output Voltage 2
Output Current 2
Input Voltage
FOIN Input Voltage
CIN Input Voltage
FO Output Voltage
FO Output Current
Package Power Dissipation
Linear Derating Factor
Junction Temperature
Operation Temperature
Storage T emperature
Ta = 25°C, Non Board
Ta > 25°C, Non Board
–0.5 ~ 24
–0.5 ~ VCC+0.5
±600
–0.5 ~ VCC+0.5
375
–0.5 ~ VCC+0.5
CC+0.5
–0.5 ~ V
–0.5 ~ V
CC+0.5
–0.5 ~ VCC+0.5
15
0.43
–4.31
–20 ~ 125
–20 ~ 75
–40 ~ 125
V
V
mA
V
mA
V
V
V
V
mA
W
mW/°C
°C
°C
°C
RECOMMENDED OPERATING CONDITIONS
Symbol UnitParameter Test conditions
VCC
VIN
Fixed Supply Voltage
Input Voltage
THERMAL DERATING FACTOR CHARACTERISTIC
1.5
(W)
D
1.0
0.5
0.43
Package Power Dissipation P
0.0
Temperature (°C)
Non Board
Limits
Min. Typ. Max.
13.5
0
1251007550250
—
—
16.5
5
V
V
Mar. 2003
MITSUBISHI SEMICONDUCTORS <HVIC>
ELECTRICAL CHARACTERISTICS (Ta=25°C, VCC=15V, GND=0V unless otherwise specified)
Symbol UnitParameter Test conditions
ICC
VIH
VINh
IIH
IIL
VCCuvr
VCCuvh
tVCCuv
VFIH
VFIh
IFIH
IFIL
VCIN
tCIN
VCFH
ICFO
IFO
VFO
VOH
VOL
ROH
ROL
tdLH
tdHL
VOth
VGS
ISO
tSO
* Typ. is not specified.
VCC Standby Current
High Level Input Threshold Voltage
Input Hysteresis Voltage
High Level Input Bias Current
Low Level Input Bias Current
CC Supply UV Reset Voltage
V
CC Supply UV Hysteresis Voltage
V
CC Supply UV Filter Time
V
FOIN High Level Input Threshold Voltage
FOIN Input Hysteresis Voltage
FOIN High Level Input Bias Current
FOIN Low Level Input Bias Current
CIN Input Threshold Voltage
CIN Propagation Delay
FO Threshold Voltage
C
FO Source Current
C
FO Leak Current
FO Output Saturation Voltage
High Level Output Voltage
Low Level Output Voltage
Output High Level On Resistance
Output Low Level On Resistance
Propagation Delay
Turn-On
Turn-Off Propagation Delay
Threshold Voltage
GSOUT
GS Output Saturation Voltage
OUT Soft Cut-Off Sink Current
OUT Soft Cut-Off Delay
IN=VCC
V
VIL: Low Level Input Threshold Voltage
VINh=VIH–VIL
VIN=VCC
VIN=0V
CCuvt: VCC Supply UV Trip Voltage
V
CCuvh=VCCuvr–VCCuvt
V
V
FIL
: Low Level Input Threshold Voltage
VFIh=VFIH–VFIL
VFIN=VCC
VFIN=0V
CFO=0V
V
FO=VCC
V
IFO=15mA
IO=0mA
O=0mA
I
O=–200mA, ROH=(VOH–VO)/IO
I
IO=200mA, ROH=VO/IO
OUT–GND
OUT–GND
GS=100mA
I
CIN=1V, VO=VCC
V
Min. Typ.* Max.
1.0
2.5
0.5
–0.1
11.2
2.5
0.5
–0.1
0.40
2.6
–40.0
0.7
13.3
26.3
13.0
1.5
0.7
2.0
M63975FP
IGBT MOSFET DRIVER
Limits
2.0
3.0
1.6
—
50
—
—
50
—
—
—
—
—
—
100
12.0
0.5
10.0
3.0
1.6
—
100
0.50
0.5
3.0
–25.0
—
1.2
14.0
—
35.7
19.0
300
300
2.5
1.6
20
5.5
3.5
4.0
3.2
—
200
12.8
—
—
4.0
3.2
—
200
0.60
0.8
3.4
–15.0
1.0
2.0
—
0.1
71.4
28
900
900
3.8
2.5
—
9.0
mA
V
V
µA
µA
V
V
µs
V
V
µA
µA
V
µs
V
µA
µA
V
V
V
Ω
Ω
ns
ns
V
V
mA
µs
Mar. 2003
TIMING DIAGRAM
1. SC
IN
OUT
MITSUBISHI SEMICONDUCTORS <HVIC>
M63975FP
IGBT MOSFET DRIVER
20mA sink
2. UV
CIN
Protection
Status
C
FO
FO
IN
OUT
CC
V
Protection
Status
C
FO
FO
tVCCuv
V
SCt
V
CCuvt
RESET
V
CCuvr
V
CFO
V
CFO
RESET
3. FOIN
IN
OUT
FOIN
Protection
Status
FO
RESET
H
Mar. 2003
PACKAGE OUTLINE
MITSUBISHI SEMICONDUCTORS <HVIC>
M63975FP
IGBT MOSFET DRIVER
10P2N-A
EIAJ Package Code
SOP010-P-300-1.27
HE
Plastic 10pin 300mil SOP
6
5
b
y
Detail G
Weight(g)
0.16
x
M
JEDEC Code
–
10
E
1
G
Z1
D
e
z
F
Lead Material
Cu Alloy
A
A
L1
2
Detail F
e
b2
I2
e1
Recommended Mount Pad
Dimension in Millimeters
Symbol
A1
L
c
Min Nom Max
A
–
0
A1
A
2
–
.350
b
.180
c
D
.76
E
.65
e
–
.827
E
H
.30
L
–
L1
z
–
Z1
–
x
–
y
–
0° – 8°
b
2
– .760 –
e1
–
I2
.271
–
.10
.81
.40
.20
.86
.75
.271
.128
.50
.211
0.86
–
–
–
.627
–
.12
.20
–
.50
.250
.96
.85
–
.428
.70
–
–
1.01
0.25
.10
–
–
Mar. 2003
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