MITSUBISHI M63975FP Technical data
IN
1
2
3
4
5
10
9
8
7
6
FOIN
FO
C
FO
GND
V
CC
OUT
GS
GND
CIN
MITSUBISHI SEMICONDUCTORS <HVIC>
M63975FP
IGBT MOSFET DRIVER
DESCRIPTION
M63975FP is Power MOSFET and IGBT module driver for
half bridge applications.
FEATURES
¡SUPPLY VOLTAGE ......................................................24V
¡OUTPUT CURRENT .............................................±600mA
¡LOW SIDE DRIVER
¡SOP-10
¡BUILT-IN SOFT STOP FACILITY
APPLICATION
MOSFET and IGBT module inverter driver
BLOCK DIAGRAM
PIN CONFIGURATION (TOP VIEW)
NC:NO INTERNAL CONNECTION
Outline 10P2N
10
VCC
1
IN
9
RSQ
D
FOIN
2
FO
3
UV
DETECT
FILTER
+
4
CFO
GND
5
–
R
Q
S
Q
T
S
DELAY
+
–
V
REG
OUT
8
GS
7
GND
6
CIN
Mar. 2003
MITSUBISHI SEMICONDUCTORS <HVIC>
M63975FP
IGBT MOSFET DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Ratings Unit
CC
V
VOUT
IOUT
VGS
IGS
VIN
VFIN
VCIN
VFO
IFO
PD
K q
Tj
Topr
Tstg
Fixed Supply Voltage
Output Voltage 1
Output Current 1
Output Voltage 2
Output Current 2
Input Voltage
FOIN Input Voltage
CIN Input Voltage
FO Output Voltage
FO Output Current
Package Power Dissipation
Linear Derating Factor
Junction Temperature
Operation Temperature
Storage T emperature
Ta = 25°C, Non Board
Ta > 25°C, Non Board
–0.5 ~ 24
–0.5 ~ VCC+0.5
±600
–0.5 ~ VCC+0.5
375
–0.5 ~ VCC+0.5
CC+0.5
–0.5 ~ V
–0.5 ~ V
CC+0.5
–0.5 ~ VCC+0.5
15
0.43
–4.31
–20 ~ 125
–20 ~ 75
–40 ~ 125
V
V
mA
V
mA
V
V
V
V
mA
W
mW/°C
°C
°C
°C
RECOMMENDED OPERATING CONDITIONS
Symbol UnitParameter Test conditions
VCC
VIN
Fixed Supply Voltage
Input Voltage
THERMAL DERATING FACTOR CHARACTERISTIC
1.5
(W)
D
1.0
0.5
0.43
Package Power Dissipation P
0.0
Temperature (°C)
Non Board
Limits
Min. Typ. Max.
13.5
0
1251007550250
—
—
16.5
5
V
V
Mar. 2003
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