MITSUBISHI M63836FP, M63836KP Technical data
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63836FP/KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
The M63836FP/KP 8-channel sinkdriver, consists of 8 PNP
and 16 NPN transistors connected to from eight high current
gain driver pairs.
FEATURES
●
High breakdown voltage (BVCEO ≥ 50V)
●
High-current driving (IC(max) = 500mA)
●
3V micro computer compatible input
●
“L” active level input
●
With input diode
●
With clamping diodes
●
Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Output for 3 voltage microcomputer series and interface with
high voltage system. Relay and small printer driver, LED, or
incandescent display digit driver.
FUNCTION
The M63836FP/KP is transistor-array of high active level
eight units type which can do direct drive of 3 voltage microcomputer series. A resistor of 3.5kΩ is connected between
the input and the base of PNP transistors. A clamp diode for
inductive load transient suppression is connected for the
output pin (collector) and COM pin. The input diode is intended to prevent the flow of current from the input to the
Vcc. without this diode, the current flows from “H” input to the
Vcc and the “L” input circuit is activated, in such a case
where one of the inputs of the 8 circuit is “H” and the other
are “L” to save power consumption. The diode is inserted to
prevent such mis-operation. The outputs are capable of driving 500mA and are rated for operation with output voltage up
to 50V.
PIN CONFIGURATION
INPUT
NC
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
GND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
20P2N-A(FP)
Package type
20P2E-A(KP)
CIRCUIT DIAGRAM
20K
INPUT
3.5K
The eight circuits share the Vcc, COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
1.05K
7.2K 3K
COM COMMON
O1
O2
O3
O4
OUTPUT
O5
O6
O7
O8
V
CC
NC : No connection
V
CC
COM
OUTPUT
GND
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
VCC
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
RatingsSymbol Parameter Conditions Unit
7
–0.5 ~ +50
500
CC
–0.5 ~ V
500
50
1.10(FP)/0.68(KP)
–40 ~ +85
–55 ~ +125
V
V
mA
V
mA
V
W
°C
°C
Sep. 2001
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCC Supply voltage
Collector current (Current per
C
I
1 circuit when 8 circuits are
coming on simultaneously)
VIH
VIL
“H” input voltage
“L” input voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
V
CE(sat)
II
VF
IR
ICC
hFE
✽ : Typical values are at Ta = 25°C
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Clamping diode forward volltage
Clamping diode reverse current
Supply current (AN only Input)
DC amplification factor
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Parameter
Duty Cycle
FP : no more than 4%
KP : no more than 2%
Duty Cycle
FP : no more than 15%
KP : no more than 6%
I
CEO = 100µA
V
CC = 2.7V, VI = 0.5V, IC = 400mA
CC = 2.7V, VI = 0.5V, IC = 200mA
V
V
I = VCC-2.2V
F = 400mA
I
V
R = 50V
CC = 3.6V, VI = 0.5V
V
CC = 2.7V, VCE = 2V, IC = 0.35A, Ta = 25°C
V
M63836FP/KP
Limits
min typ max
2.7
V
CC-0.5
min typ max
—
—
—
—
—
—
2000
50
3.0
0
—
0
—
—
—
0
Limits
✽
—
1.15
0.93
–220
1.4
0.1
2.6
10000
3.6
400
200
VCC
VCC-2.2
—
2.4
1.6
–600
2.4
100
4.0
—
Unit
V
mA
V
V
V
V
µA
V
µA
mA
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
t
on
toff
NOTE 1 TEST CIRCUIT
Turn-on time
Turn-off time
INPUT V
PG
50Ω
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
I
= 0.5 ~ 2.7V
V
(2)Input-output conditions : R
(3)Electrostatic capacity C
at connections and input capacitance at probes
CC
Measured
device
OPEN
L
= 30Ω, Vo = 10V, Vcc = 2.7V
L
includes floating capacitance
CL = 15pF (note 1)
O
V
R
L
OUTPUT
L
C
TIMING DIAGRAM
min typ max
—
—
INPUT
50% 50%
OUTPUT
50% 50%
ton toff
Limits
120
4500
—
—
ns
ns
Sep. 2001
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