MITSUBISHI M63834FP, M63834KP Technical data

PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63834FP/KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
The M63834FP/KP 8-channel sinkdriver, consists of 8 PNP and 16 NPN transistors connected to from eight high current gain driver pairs.
FEATURES
High breakdown voltage (BVCEO 50V)
High-current driving (IC(max) = 500mA)
3V micro computer compatible input
“L” active level input
With input diode
Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver.
FUNCTION
The M63834GP/KP is transistor-array of high active level eight units type which can do direct drive of 3 voltage micro­computer series. A resistor of 3.5k is connected between the input and the base of PNP transistors. The input diode is intended to prevent the flow of current from the input to the Vcc. Without this diode, the current flows from “H” input to the Vcc and the “L” input circuit is activated, in such a case where one of the inputs of the 8 circuit is “H” and the other are “L” to save power consumption. The diode is inserted to prevent such mis-operation. The outputs are capable of driv­ing 500mA and are rated for operation with output voltage up to 50V.
PIN CONFIGURATION
1
NC
2
IN1
3
IN2
4
IN3
5
INPUT OUTPUT
IN4
IN5
IN6
IN7
IN8
GND
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
20P2N-A(FP)
Package type
20P2E-A(KP)
CIRCUIT DIAGRAM
20K
INPUT
3.5K
The diode, indicated with the dotted line, is parasitic, and cannot be used.
1.05K
7.2K 3K
The eight circuits share the Vcc and GND
NC
O1
O2
O3
O4
O5
O6
O7
O8
V
CC
NC : No connection
V
OUTPUT
GND
Unit :
CC
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
VCC
VCEO
IC
VI
Pd
Topr
Tstg
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
RatingsSymbol Parameter Conditions Unit
7
–0.5 ~ +50
500
CC
–0.5 ~ V
1.10(FP)/0.68(KP)
–40 ~ +85
–55 ~ +125
V
V
mA
V
W
°C °C
Sep. 2001
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCC Supply voltage
Collector current (Current per
C
I
1 circuit when 8 circuits are coming on simultaneously)
VIH
VIL
H input voltage
L” input voltage
Parameter
Duty Cycle FP : no more than 4% KP : no more than 2%
Duty Cycle FP : no more than 15% KP : no more than 6%
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
CE(sat)
V
II
ICC hFE
: Typical values are at Ta = 25°C
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current Supply current (AN only Input)
DC amplification factor
CEO = 100µA
I
V
CC = 2.7V, VI = 0.5V, IC = 400mA CC = 2.7V, VI = 0.5V, IC = 200mA
V
V
I = VCC-2.2V CC = 3.6V, VI = 0.5V
V
V
CC = 2.7V, VCE = 2V, IC = 0.35A, Ta = 25°C
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
M63834FP/KP
Limits
min typ max
2.7
V
CC-0.5
min typ max
50
— —
— —
2000
3.0
0
0
— —
0
Limits
1.15
0.93
–220
2.6
10000
3.6
400
200
VCC
VCC-2.2
2.4
1.6
–600
4.0
Unit
V
mA
V
V
V
V
µA
mA
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
t
on
toff
NOTE 1 TEST CIRCUIT
Turn-on time
Turn-off time
INPUT
PG
50
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50
V
I
= 0.5 ~ 2.7V (2)Input-output conditions : R (3)Electrostatic capacity C
at connections and input capacitance at probes
V
CC
Measured device
L
= 30, Vo = 10V, Vcc = 2.7V
L
includes floating capacitance
CL = 15pF (note 1)
V
O
R
L
OUTPUT
C
L
TIMING DIAGRAM
min typ max
INPUT
50% 50%
OUTPUT
50% 50%
ton toff
Limits
120
4500
ns
ns
Sep. 2001
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