MITSUBISHI M63830P, M63830FP Technical data
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63830P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
The M63830P/FP 4-channel sinkdriver, consists of 4 PNP
and 8 NPN transistors connected to from four high current
gain driver pairs.
FEATURES
●
High breakdown voltage (BVCEO ≥ 50V)
●
High-current driving (IC(max) = 1.5A)
●
3V micro computer series compatible input
●
With clamping diodes
●
With input diode
●
Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Output for 3 voltage microcomputer series and interface with
high voltage system. Relay and small printer driver, LED, or
incandescent display digit driver.
FUNCTION
The M63830FP/P is transistor-array of high active level four
units type which can do direct drive of 3 voltage microcomputer series. A resistor of 3.5kΩ is connected between the
input and the base of PNP transistors. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin. The input diode is intended
to prevent the flow of current from the input to the Vcc. Without this diode, the current flows from “H” input to the Vcc and
the “L” input circuit is activated, in such a case where one of
the inputs of the 4 circuit is “H” and the other are “L” to save
power consumption. The diode is inserted to prevent such
mis-operation. The outputs are capable of driving 1.5A and
are rated for operation with output voltage up to 50V.
PIN CONFIGURATION
OUTPUT1
INPUT1
INPUT2
OUTPUT2
VCC
O1
IN1
GND
IN2
O2
VCC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
16P4(P)
Package type
16P2N-A(FP)
CIRCUIT DIAGRAM
22K
INPUT
3.5K
The four circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
760
5.5K 3K
COM COMMON
O4
OUTPUT4
INPUT4
IN4
GND
IN3
INPUT3
O3
OUTPUT3
COM COMMON
V
COM
OUTPUT
GND
Unit : Ω
CC
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
VCC
VCEO
IC
VI
VR
IF
Pd
Topr
Tstg
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Clamping diode reverse voltage
Clamping diode forward current
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Pulse width ≤ 10ms, duty cycle ≤ 5%
Pulse width ≤ 100ms, duty cycle ≤ 5%
Ta = 25°C, when mounted on board
RatingsSymbol Parameter Conditions Unit
7
–0.5 ~ +50
1.5
CC
–0.5 ~ V
50
1.5
1.0
1.92(P)/1.00(FP)
–40 ~ +85
–55 ~ +125
V
V
A
V
V
A
W
°C
°C
Sep. 2001
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCC
VO
Supply voltage
Output voltage
Collector current (Current per
C
I
1 circuit when 4 circuits are
coming on simultaneously)
VIH
VIL
“H” input voltage
“L” input voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
ICC
V
CE(sat)
II
IR
VF
hFE
✽ : Typical values are at Ta = 25°C
Collector-emitter breakdown voltage
Supply current (AN only Input)
Collector-emitter saturation voltage
Input current
Clamping diode reverse current
Clamping diode forward volltage
DC amplification factor
4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Parameter
VCC = 3V, Duty Cycle
P : no more than 5%
FP : no more than 2%
CC = 3V, Duty Cycle
V
P : no more than 15%
FP : no more than 7%
I
CEO = 100µA
CC = 3.6V, VI = 0.5V
V
V
CC = 2.7V, VI = 0.5V, IC = 1.25A
CC = 2.7V, VI = 0.5V, IC = 0.7A
V
V
I = VCC-2.2V
I = VCC-3.6V
V
V
R = 50V
F = 1.25A, VCC open
I
CC = 2.7V, VCE = 2V, IC = 1A, Ta = 25°C
V
M63830P/FP
Limits
min typ max
2.7
CC-0.5
V
min typ max
50
—
—
—
—
—
—
—
4000
3.0
—
0
0
—
0
—
—
—
0
Limits
✽
—
3.7
1.4
1.0
–0.22
–0.60
—
1.5
30000
3.6
50
1.25
0.7
CC
V
VCC-2.2
—
5.0
2.2
1.7
–0.6
–0.95
100
2.3
—
Unit
V
V
A
V
V
V
mA
V
mA
µA
V
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
t
on
toff
NOTE 1 TEST CIRCUIT
Turn-on time
Turn-off time
INPUT V
PG
50Ω
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
I
= 0.5 ~ 2.7V
V
(2)Input-output conditions : R
(3)Electrostatic capacity C
at connections and input capacitance at probes
CC
Measured
device
OPEN
L
= 8.3Ω, Vo = 10V, Vcc = 2.7V
L
includes floating capacitance
CL = 15pF (note 1)
O
V
R
L
OUTPUT
L
C
TIMING DIAGRAM
min typ max
—
—
INPUT
50% 50%
OUTPUT
50% 50%
ton toff
Limits
190
5300
—
—
ns
ns
Sep. 2001
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