MITSUBISHI M63828WP, M63828DP Technical data
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63828WP/DP
Taiwan A’ssy product
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63828WP and M63828DP are seven-circuit Darlington
transistor arrays with clamping diodes. The circuits are made
of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
FEATURES
Two package configurations (WP/DP)
High breakdown voltage (BV
CEO ≥ 50V)
High-current driving (Ic(max) = 500mA)
With clamping diodes
Driving available with TTL, PMOS IC output
Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
PIN CONFIGURATION
INPUT OUTPUT
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
GND
1IN1→
2
3
4
5
6
7
8
16
15
14
13
12
11
10
16P4X-A(WP)
Package type 16P2X-B(DP)
CIRCUIT DIAGRAM
INPUT
10.5K
7.2K
3K
→O1
→O2
→O3
→O4
→O5
→O6
→O7
COM COMMON
9
COM
OUTPUT
GND
The diode, indicated with the dotted line, is parasitic, and cannot
FUNCTION
be used.
The M63828WP and M63828DP each have seven circuits
consisting of NPN Darlington transistors. These ICs have resistance of 10.5kΩ between input transistor bases and input
pins. A spike-killer clamping diode is provided between each
output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
The seven circuits share the COM and GND.
RatingsSymbol Parameter Conditions Unit
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.47(WP)/1.00(DP)
–40 ~ +85
–55 ~ +125
Unit : Ω
V
mA
V
mA
V
W
°C
°C
Feb. 2003
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
ton
50% 50%
50% 50%
toff
INPUT
OUTPUT
M63828WP/DP
Taiwan A’ssy product
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
VO
IC
VIH
VIL
ParameterSymbol
Output voltage
Collector current
(Current per 1 circuit when 7 circuits
are coming on simultaneously)
“H” input voltage
“L” input voltage
Duty Cycle
WP : no more than 8%
DP : no more than 5%
Duty Cycle
WP : no more thn 30%
DP : no more than 20%
C ≤ 400mA
I
Limits
min typ max
0
0
0
5
0
—
—
—
400
200
—
—
0.8
50
25
Unit
V
mA
V
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
VCE (sat)
I
I
VF
IR
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
ICEO = 100µA
I = 500µA, IC = 350mA
I
I = 350µA, IC = 200mA
I
I = 250µA, IC = 100mA
I
I = 10V
V
F = 350mA
I
R = 50V
V
CE = 2V, IC = 350mA
V
Limits
min typ max
50
—
—
—
—
—
—
—
1000
1.2
1.0
0.9
0.9
1.4
—
3000
100
—
1.6
1.3
1.1
1.5
2.0
—
V
V
mA
V
µA
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
t
toff
on
Turn-on time
Turn-off time
CL = 15pF (note 1)
TIMING DIAGRAMNOTE 1 TEST CIRCUIT
V
INPUT
Measured device
PG
50Ω C
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
I = 8V
V
(2) Input-output conditions : R
(3) Electrostatic capacity C
connections and input capacitance at probes
O = 50Ω
L = 25Ω, VO = 10V
L includes floating capacitance at
O
RL
OPEN
OUTPUT
L
Limits
min typ max
—
—
30
450
—
—
ns
ns
Feb. 2003
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