MITSUBISHI M63826P, M63826FP, M63826GP Technical data

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63826P/FP/GP

7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

DESCRIPTION

M63826P, M63826FP and M63826GP are seven-circuit
Darlington transistor arrays with clamping diodes. The cir­cuits are made of NPN transistors. Both the semi-conductor
integrated circuits perform high-current driving with ex­tremely low input-current supply.
Production lineup has been newly expanded with the addi­tion of 225mil (GP) package.
M63826P and M63826FP have the same pin connection as
M54526P and M54526FP. (Compatible with M54526P and
M54526FP) More over, the features of M63826P and
M63826FP are equal or superior to those of M54526P and
M54526FP.

FEATURES

●

Three package configurations (P, FP and GP)

● Pin connection Compatible with M54526P and M54526FP

●

High breakdown voltage (BVCEO ≥ 50V)

●

High-current driving (IC(max) = 500mA)

●

With clamping diodes

●

Driving available with PMOS IC output of 8-18V

●

Wide operating temperature range (Ta = –40 to +85 °C)

APPLICATION

Drives of relays and printers, digit drives of indication ele­ments (LEDs and lamps), and MOS-bipolar logic IC inter­faces

FUNCTION

The M63826P, M63826FP and M63826GP each have seven
circuits consisting of NPN Darlington transistors. These ICs
have resistance of 10.5kΩ between input transistor bases
and input pins. A spike-killer clamping diode is provided be­tween each output pin (collector) and COM pin (pin 9). The
output transistor emitters are all connected to the GND pin
(pin 8). The collector current is 500mA maximum. Collector­emitter supply voltage is 50V maximum.The M63826FP and
M63826GP is enclosed in molded small flat package, en­abling space-saving design.

PIN CONFIGURATION

1

IN1→
IN2→

2

→

IN3

3

IN4→
IN5→
IN6→
IN7
GND

4
5
6

→

7
8

INPUT OUTPUT

→

16

O1

→

15

O2

→

14

O3

→

13

O4

→

12

O5

→

11

O6

→

10

O7

→

9

COM COMMON

16P4(P)
16P2N-A(FP)
16P2S-A(GP)Package type

CIRCUIT DIAGRAM

INPUT

The diode, indicated with the dotted line, is parasitic, and
cannot be used.

10.5k

7.2k

3k

The seven circuits share the COM and GND

COM
OUTPUT

GND

Unit : Ω

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)

VCEO
IC
VI
IF
VR
Pd
Topr
Tstg

Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature

Output, H
Current per circuit output, L

Ta = 25°C, when mounted on board

RatingsSymbol Parameter Conditions Unit

–0.5 ~ +50

500

–0.5 ~ +30

500

50

1.47(P)/1.00(FP)/0.80(GP)
–40 ~ +85

–55 ~ +125

V

mA

V

mA

V

W

°C
°C

Jan. 2000

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)

Symbol Unit

Parameter

min typ max

VO Output voltage

Duty Cycle
P : no more than 8%
FP : no more than 5%
GP : no more than 4%

Duty Cycle
P : no more than 30%
FP : no more than 20%
GP : no more than 15%

IC

VIH
VIL

Collector current
(Current per 1 cir­cuit when 7 circuits
are coming on si­multaneously)

“H” input voltage
“L” input voltage

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

CE(sat)

V

II
VF
IR
hFE

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Input current
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor

I

CEO = 100µA
I = 500µA, IC = 350mA

I

I = 350µA, IC = 200mA

I

I = 250µA, IC = 100mA

I

I = 10V

V

F = 350mA

I

R = 50V

V

CE = 4V, IC = 350mA

V

Limits

0

0

—

—

50

400

V

mA

0

5
0

—

—
—

200

25

0.5

V
V

M63826P/FP/GP

Limits

min typ max

50
—
—
—
—
—
—

1000

—

1.2

1.0

0.9

0.9

1.4

—

2500

—

1.6

1.3

1.1

1.4

2.0

100

—

V

V

mA

V
µA
—

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

ton
toff

Turn-on time
Turn-off time

CL = 15pF (note 1)

TIMING DIAGRAMNOTE 1 TEST CIRCUIT

OPEN

Vo

R

L

OUTPUT

L

C

INPUT

Measured device

PG

50Ω

(1)Pulse generator (PG) characteristics : PRR=1kHz,

tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω

P

= 8V

P-P

V
(2)Input-output conditions : RL = 25Ω, Vo = 10V
(3)Electrostatic capacity C

at connections and input capacitance at probes

L

includes floating capacitance

INPUT

OUTPUT

Limits

min typ max

—
—

ton toff

15

350

50%50%

—
—

ns
ns

50%50%

Jan. 2000