MITSUBISHI M63820FP, M63820KP Technical data
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63820FP/KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
The M63820FP/KP 8-channel sinkdriver, consists of 16 NPN
transistors connected to from eight high current gain driver
pairs.
FEATURES
●
High breakdown voltage (BVCEO ≥ 50V)
●
High-current driving (IC(max) = 500mA)
●
With clamping diodes
●
3V micro computer series compatible input
●
Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Output for 3 voltage microcomputer series and interface with
high voltage system. Relay and small printer driver, LED, or
incandescent display digit driver.
FUNCTION
The M63820FP/KP is transistor-array of high active level
eight units type which can do direct drive of 3 voltage microcomputer series. A resistor of 1.05kΩ is connected between
the input pin. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM
pin (pin11). All emitters of the output transistor are connected to GND (pin10). The outputs are capable of driving
500mA and are rated for operation with output voltage up to
50V.
PIN CONFIGURATION
1
NC
2
IN1
3
IN2
4
IN3
5
INPUT OUTPUT
IN4
IN5
IN6
IN7
IN8
GND
6
7
8
9
10
20
NC
19
O1
18
O2
17
O3
16
O4
15
O5
14
O6
13
O7
12
O8
11
COM COMMON
20P2N-A(FP)
Package type
20P2E-A(KP)
CIRCUIT DIAGRAM
INPUT
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
1.05K
7.2K
3K
The eight circuits share the COM and GND
NC : No connection
COM
OUTPUT
GND
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
RatingsSymbol Parameter Conditions Unit
–0.5 ~ +50
500
–0.5 ~ +10
500
50
1.10(GP)/0.68(KP)
–40 ~ +85
–55 ~ +125
V
mA
V
mA
V
W
°C
°C
Sep. 2001
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VO Output voltage
Collector current (Current per
C
I
1 circuit when 8 circuits are
coming on simultaneously)
VIH
VIL
“H” input voltage
“L” input voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
CE(sat)
V
II
VF
IR
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Parameter
Duty Cycle
FP : no more than 4%
KP : no more than 2%
Duty Cycle
FP : no more than 15%
KP : no more than 6%
C ≤ 400mA
I
I
CEO = 100µA
I
I = 500µA, IC = 350mA
I = 350µA, IC = 200mA
I
I
I = 250µA, IC = 100mA
I = 3V
V
I
F = 350mA
R = 50V
V
CE = 2V, IC = 350mA
V
M63820FP/KP
Limits
min typ max
0
—
0
—
0
—
2.7
min typ max
50
—
—
—
—
—
—
1000
—
—
0
Limits
—
1.2
1.0
0.9
1.5
1.4
—
100
2500
50
400
200
10
0.6
—
1.6
1.3
1.1
2.4
2.0
—
Unit
V
mA
V
V
V
V
mA
V
µA
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
t
on
toff
NOTE 1 TEST CIRCUIT
Turn-on time
Turn-off time
INPUT
Measured device
PG
50Ω
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
I
= 0 ~ 3V
V
(2)Input-output conditions : R
(3)Electrostatic capacity C
at connections and input capacitance at probes
OPEN
L
= 25Ω, Vo = 10V
L
includes floating capacitance
CL = 15pF (note 1)
V
O
R
L
OUTPUT
L
C
TIMING DIAGRAM
min typ max
50% 50%
INPUT
OUTPUT
50% 50%
ton toff
Limits
—
—
15
350
—
—
ns
ns
Sep. 2001
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