MITSUBISHI M63814P Technical data
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63816P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63816P/FP/KP are eight-circuit Single transistor arrays
with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform
high-current driving with extremely low input-current supply.
FEATURES
●
Three package configurations (P, FP, and KP)
●
Medium breakdown voltage (BVCEO ≥ 35V)
●
Synchronizing current (IC(max) = 300mA)
●
With clamping diodes
●
Low output saturation voltage
●
Wide operating temperature range (Ta = –40 to +85 °C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63816P/FP/KP each have eight circuits consisting of
NPN transistor. A spike-killer clamping diode is provided between each output pin (collector) and COM pin. The transistor emitters are all connected to the GND pin. The transistors
allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector
and emitter.
PIN CONFIGURATION
1
INPUT
IN1→
→
IN2
2
→
3
IN3
→
4
IN4
→
5
IN5
→
613
IN6
→
IN7
7
8
→
IN8
GND
9
18
17
16
15
14
12
11
10
Package type 18P4G(P)
1
→
2
IN1
→
IN2
3
→
4
IN3
→
5
IN4
INPUT OUTPUT
IN5
IN6
IN7
IN8
GND
→
6
→
7
→
8
→
9
10
20
19
18
17
16
15
14
13
12
11
20P2N-A(FP)
Package type 20P2E-A(KP)
CIRCUIT DIAGRAM
→
O1
→
O2
→
O3
→
O4
OUTPUT
→
O5
→
O6
→
O7
→
O8
→COM
COMMOM
NCNC
→
O1
→
O2
→
O3
→
O4
→
O5
→
O6
→
O7
→
O8
→
COMMOM
COM
NC : No connection
COM
OUTPUT
INPUT
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
2.7k
10k
GND
The eight circuits share the COM and GND.
Unit: Ω
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol UnitParameter Test conditions
VO V0
C
I
VIN Input voltage
Output voltage
Collector current
(Current per 1 circuit when 8 circuits
are coming on simultaneously)
M63816P
M63816FP
M63816KP
Duty Cycle no more than 50%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 12%
Duty Cycle no more than 100%
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Output, H
Current per circuit output, L
Ta = 25°C, when mounted
on board
M63816P
M63816FP
M63816KP
M63816P/FP/KP
RatingsSymbol Parameter Conditions Unit
–0.5 ~ +35
300
–0.5 ~ +35
300
35
1.79
1.10
0.68
–40 ~ +85
–55 ~ +125
Limits
min typ max
—
0
0
0
0
0
0
0
—
—
—
—
—
—
—
250
170
250
130
250
100
mA
mA
°C
°C
35
mA
20
V
V
V
W
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
CE(sat)
V
VIN(on)
VF
IR
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
“On” input voltage
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
I
CEO = 10µA
IN = 1mA, IC = 10mA
I
IN = 2mA, IC = 150mA
I
IN = 1mA, IC = 10mA
I
F = 250mA
I
V
V
R = 35V
CE = 10V, IC = 10mA
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
ton
toff
Turn-on time
Turn-off time
CL = 15pF (note 1)
Limits
min typ max
35
—
—
2.4
—
—
50
min typ max
—
—
—
—
—
3.5
1.2
—
—
Limits
125
250
—
0.2
0.8
4.2
2.0
10
—
—
—
V
V
V
V
µA
—
ns
ns
Jan. 2000
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