MITSUBISHI M63814FP, M63814GP, M63814KP Technical data
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63814P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN
transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current
supply.
FEATURES
●
Four package configurations (P, FP, GP and KP)
●
Medium breakdown voltage (BVCEO ≥ 35V)
●
Synchronizing current (IC(max) = 300mA)
●
With clamping diodes
●
Low output saturation voltage
●
Wide operating temperature range (Ta = –40 to +85 °C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
PIN CONFIGURATION
→
IN1
1
→
2
IN2
→
3
INz3
→
4
IN4
INPUT
→
5
IN5
→
611
IN6
→
7
IN7
GND
8
16P4(P)
16P2N-A(FP)
Package type
16P2S-A(GP)
16P2Z-A(KP)
CIRCUIT DIAGRAM
INPUT
10.5k
10k
→
16
O1
→
15
O2
→
14
O3
→
13
O4
12
→O5
→
O6
→
10
O7
9
→
COM COMMOM
OUTPUT
COM
OUTPUT
GND
FUNCTION
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
The M63814P/FP/GP/KP each have seven circuits consisting of NPN transistor. A spike-killer clamping diode is provided between each output pin (collector) and COM pin
(pin9). The transistor emitters are all connected to the GND
pin (pin 8). The transistors allow synchronous flow of 300mA
collector current. A maximum of 35V voltage can be applied
between the collector and emitter.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted
on board
The seven circuits share the COM and GND.
RatingsSymbol Parameter Conditions Unit
–0.5 ~ +35
300
–0.5 ~ +35
300
35
M63814P
M63814FP
M63814GP
M63814KP
1.47
1.00
0.80
0.78
–40 ~ +85
–55 ~ +125
Unit: Ω
V
mA
V
mA
V
W
°C
°C
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63814P/FP/GP/KP
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol UnitParameter Test conditions
VO V0
IC
Output voltage
Collector current
(Current per 1 circuit when 7 circuits
are coming on simultaneously)
M63814P
M63814FP
M63814GP
M63814KP
Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
VIN Input voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
CE(sat)
V
VIN(on)
VF
IR
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
“On” input voltage
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
I
CEO = 10µA
IN = 1mA, IC = 10mA
I
IN = 2mA, IC = 150mA
I
IN = 1mA, IC = 10mA
I
F = 250mA
I
R = 35V
V
CE = 10V, IC = 10mA
V
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Limits
min typ max
—
0
0
0
0
0
0
0
0
0
—
—
—
—
—
—
—
—
—
35
250
160
250
130
250
120
250
120
30
Limits
min typ max
35
—
—
7.5
—
—
50
—
—
—
11.0
1.2
—
—
—
0.2
0.8
15.0
2.0
10
—
mA
V
V
V
V
V
µA
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
ton
toff
NOTE 1 TEST CIRCUIT
Turn-on time
Turn-off time
INPUT
Measured device
PG
50Ω
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, V
(2)Input-output conditions : R
(3)Electrostatic capacity C
connections and input capacitance at probes
OPEN
L
= 220Ω, Vo = 35V
L
includes floating capacitance at
CL = 15pF (note 1)
Vo
R
L
OUTPUT
L
C
IH
= 11V
TIMING DIAGRAM
INPUT
OUTPUT
50%
ton toff
Limits
min typ max
—
—
120
240
—
—
50%
ns
ns
50%50%
Jan. 2000
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