MITSUBISHI M63813P, M63813FP, M63813GP, M63813KP Technical data

PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63813P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63813P/FP/GP/KP are seven-circuit Single transistor ar­rays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits per­form high-current driving with extremely low input-current supply.
FEATURES
Four package configurations (P, FP, GP and KP)
Medium breakdown voltage (BVCEO 35V)
Synchronizing current (IC(max) = 300mA)
With clamping diodes
Low output saturation voltage
Wide operating temperature range (Ta = –40 to +85 °C)
APPLICATION
Driving of digit drives of indication elements (LEDs and lamps) with small signals
PIN CONFIGURATION
IN1
IN2
INz3
IN4
INPUT
IN5
IN6
IN7
GND
Package type
CIRCUIT DIAGRAM
2.7k
16
1 2 3 4
5 611
7
8
O1
15
O2
14
O3
13
O4
12
O5
O6
10
O7
9
COM COMMOM
OUTPUT
16P4(P) 16P2N-A(FP) 16P2S-A(GP) 16P2Z-A(KP)
COM OUTPUT
10k
GND
FUNCTION
The M63813P/FP/GP/KP each have seven circuits consist-
The diode, indicated with the dotted line, is parasitic, and cannot be used.
ing of NPN transistor. A spike-killer clamping diode is pro­vided between each output pin (collector) and COM pin (pin9). The transistor emitters are all connected to the GND pin (pin 8). The transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
VCEO IC VI IF VR
Pd
Topr Tstg
Collector-emitter voltage Collector current Input voltage Clamping diode forward current Clamping diode reverse voltage
Power dissipation
Operating temperature Storage temperature
Output, H Current per circuit output, L
Ta = 25°C, when mounted on board
The seven circuits share the COM and GND.
RatingsSymbol Parameter Conditions Unit
–0.5 ~ +35
300
–0.5 ~ +35
300
35 M63813P M63813FP M63813GP M63813KP
1.47
1.00
0.80
0.78
–40 ~ +85
–55 ~ +125
Unit:
V
mA
V
mA
V
W
°C °C
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63813P/FP/GP/KP
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol UnitParameter Test conditions
VO V0
IC
Output voltage
Collector current (Current per 1 cir­cuit when 7 circuits are coming on si­multaneously)
M63813P
M63813FP
M63813GP
M63813KP
Duty Cycle no more than 45% Duty Cycle no more than 100% Duty Cycle no more than 30% Duty Cycle no more than 100% Duty Cycle no more than 24% Duty Cycle no more than 100% Duty Cycle no more than 24% Duty Cycle no more than 100%
VIN Input voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
CE(sat)
V VIN(on)
VF IR hFE
Collector-emitter breakdown voltage Collector-emitter saturation voltage
“On” input voltage Clamping diode forward volltage Clamping diode reverse current DC amplification factor
I
CEO = 10µA IN = 1mA, IC = 10mA
I
IN = 2mA, IC = 150mA
I
IN = 1mA, IC = 10mA
I
F = 250mA
I
R = 35V
V
CE = 10V, IC = 10mA
V
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Limits
min typ max
0 0 0 0 0 0 0 0 0
35 250 160 250 130 250 120 250 120
20
Limits
min typ max
35 — —
2.4 — — 50
1.2
— — — 35
— —
0.2
0.8
4.2
2.0 10 —
mA
V
V V
V
V µA —
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
ton toff
NOTE 1 TEST CIRCUIT
Turn-on time Turn-off time
INPUT
Measured device
PG
50
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50, V (2)Input-output conditions : R (3)Electrostatic capacity C
connections and input capacitance at probes
OPEN
L
= 220, Vo = 35V
L
includes floating capacitance at
CL = 15pF (note 1)
Vo
R
L
OUTPUT
L
C
IH
= 3V
TIMING DIAGRAM
INPUT
OUTPUT
50%
ton toff
Limits
min typ max
— —
125 250
— —
50%
ns ns
50%50%
Jan. 2000
Loading...
+ 3 hidden pages