MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63812P, M63812FP, M63812GP and M63812KP are
seven-circuit Singe transistor arrays with clamping diodes.
The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
●
Four package configurations (P, FP, GP and KP)
●
Medium breakdown voltage (BVCEO≥35V)
●
Synchronizing current (IC(max) = 300mA)
●
With clamping diodes
●
With zener diodes
●
Low output saturation voltage
●
Wide operating temperature range (Ta=–40 to +85 °C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
PIN CONFIGURATION
IN1→
IN2→
IN3→
INPUT
IN4→
IN5→
IN6→
IN7→
GND
Package type
CIRCUIT DIAGRAM
INPUT
Vz=7V
10.5k
16
1
2
3
4
5
611
7
8
→O1
→O2
15
→O3
14
→O4
13
→O5
12
→
O6
→O7
10
9
→
COM COMMOM
OUTPUT
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
COM
OUTPUT
10k
GND
The diode, indicated with the dotted line, is parasitic, and
FUNCTION
cannot be used.
The M63812P, M63812FP, M63812GP and M63812KP each
have seven circuits consisting of NPN transistor.A spikekiller clamping diode is provided between each output pin
(collector) and COM pin (pin9). The transistor emitters are all
connected to the GND pin (pin 8). The transistors allow synchronous flow of 300mA collector current. A maximum of 35V
voltage can be applied between the collector and emitter.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted
on board
The seven circuits share the COM and GND.
RatingsSymbol Parameter Conditions Unit
–0.5 ~ +35
300
–0.5 ~ +35
300
35
M63812P
M63812FP
M63812GP
M63812KP
1.47
1.00
0.80
0.78
–40 ~ +85
–55 ~ +125
Unit: Ω
V
mA
V
mA
V
W
°C
°C
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol UnitParameter Test conditions
VO V0
IC
VIN Input voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
CE(sat)
V
VIN(on)
VR
IR
hFE
Output voltage
M63812P
Collector current
(Current per 1 cir-
M63812FP
cuit when 7 circuits
are coming on si-
M63812GP
multaneously)
M63812KP
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
“On” input voltage
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
I
CEO = 10µA
IN = 1mA, IC = 10mA
I
IN = 2mA, IC = 150mA
I
IN = 1mA, IC = 10mA
I
F = 250mA
I
V
V
Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
R = 35V
CE = 10V, IC = 10mA
Limits
min typ max
—
0
0
0
0
0
0
0
0
0
—
—
—
—
—
—
—
—
—
35
250
160
250
130
250
120
250
120
30
Limits
min typ max
35
—
—
13
—
—
50
—
—
—
19
1.2
—
—
—
0.2
0.8
23
2.0
10
—
mA
V
V
V
V
V
µA
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
ton
toff
NOTE 1 TEST CIRCUIT
Turn-on time
Turn-off time
INPUT Vo
Measured device
PG
50Ω
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, V
(2)Input-output conditions : R
(3)Electrostatic capacity C
connections and input capacitance at probes
OPEN
L
=220Ω,Vo=35V
L
includes floating capacitance at
CL = 15pF (note 1)
R
L
OUTPUT
C
L
IH
= 18V
TIMING DIAGRAM
INPUT
OUTPUT
Limits
min typ max
—
—
ton toff
140
240
50%50%
—
—
ns
ns
50%50%
Jan. 2000
TYPICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Thermal Derating Factor Characteristics
2.0
M63812P
1.5
M63812FP
1.0
M63812GP
M63812KP
0.5
Power dissipation Pd (W)
0
0 25 50 75 100
Ambient temperature Ta (°C)
Duty-Cycle-Collector Characteristics
(M63812P)
400
300
200
•The collector current values
represent the current per circuit.
100
Collector current Ic (mA)
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
0
20 40 60 80
0
85
0.744
0.520
0.418
0.406
100
1~4
5
6
7
Input Characteristics
4
3
(mA)
I
2
Input current I
1
0
030252015105
Input voltage V
Duty-Cycle-Collector Characteristics
(M63812P)
400
300
200
•The collector current values
100
Collector current Ic (mA)
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
0
0
20 40 60 80
Ta = –40°C
Ta = 25°C
Ta=25
I
(V)
Ta=85°C
100
1~2
3
4
5
6
7
Duty cycle (%)
Duty-Cycle-Collector Characteristics
400
(M63812FP)
300
200
•The collector current values
represent the current per circuit.
100
Collector current Ic (mA)
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
0
20 40 60 80
0
Duty cycle (%)
100
1~3
4
5
6
7
Duty cycle (%)
Duty-Cycle-Collector Characteristics
400
(M63812FP)
300
200
•The collector current values
represent the current per circuit.
100
Collector current Ic (mA)
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
0
0
20 40 60 80
Duty cycle (%)
100
1
2
3
4
5
6
7
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
400
(M63812GP/KP)
300
200
•The collector current values
100
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 25°C
0
0
20 40 60 80
Duty cycle (%)
Output Saturation Voltage
Collector Current Characteristics
250
Ta = 25°C
IB = 3mA
200
150
IB = 2mA
IB = 1.5mA
IB = 1mA
100
1~2
3
4
5
6
7
400
300
200
100
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63812GP/KP)
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the value of
the simultaneously-operated circuit.
•Ta = 85°C
0
0
20 40 60 80
Duty cycle (%)
Output Saturation Voltage
Collector Current Characteristics
100
Ta = 25°C
80
VI = 32V
VI = 28V
60
VI = 20V
VI = 16V
VI = 24V
100
1
2
3
4
5
6
7
100
IB = 0.5mA
Collector current Ic (mA)
50
0
0 0.2 0.4 0.6 0.8
Output saturation voltage V
Output Saturation Voltage
Collector Current Characteristics
100
II = 2mA
80
Ta = –40°C
60
40
20
Collector current Ic (mA)
0
0 0.05 0.10 0.15 0.20
Output saturation voltage V
CE(sat)
Ta = 25°C
Ta = 85°C
CE(sat)
(V)
(V)
40
20
Collector current Ic (mA)
0
0 0.05 0.10 0.15 0.20
Output saturation voltage V
DC Amplification Factor
Collector Current Characteristics
3
10
VCE 10V
7
Ta = 25°C
5
FE
3
2
2
10
7
5
3
DC amplification factor h
2
1
10
0
10
2357 2357
10
1
10
Collector current Ic (mA)
VI = 12V
CE(sat)
2
23 57
(V)
10
3
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63812P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Grounded Emitter Transfer Characteristics
50
VCE = 4V
40
30
20
Collector current Ic (mA)
10
0
02468
Ta = 25°C
Ta = 85°C
Input voltage V
I
(V)
Clamping Diode Characteristics
250
200
(mA)
F
150
Ta = 85°C
Ta = –40°C
10
12
Grounded Emitter Transfer Characteristics
250
VCE = 4V
200
150
100
Collector current Ic (mA)
50
0
Ta = 85°C
04 81216
Input voltage V
I
Ta = 25°C
Ta = –40°C
20
(V)
100
Ta = 25°C
50
Forward bisa current I
0
0 0.4 0.8 1.2 1.6
Forward bias voltage V
Ta = –40°C
F
(V)
2.0
Jan. 2000
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