MITSUBISHI M63805P, M63805FP, M63805KP Technical data

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63805P/FP/KP

8-UNIT 300mA TRANSISTOR ARRAY

DESCRIPTION

M63805P/FP/KP are eight-circuit Single transistor arrays.
The circuits are made of NPN transistors. Both the semicon­ductor integrated circuits perform high-current driving with
extremely low input-current supply.

FEATURES

●

Three package configurations (P, FP, and KP)

●

Medium breakdown voltage (BVCEO ≥ 35V)

●

Synchronizing current (IC(max) = 300mA)

●

With zener diodes

●

Low output saturation voltage

●

Wide operating temperature range (Ta = –40 to +85°C)

APPLICATION

Driving of digit drives of indication elements (LEDs and
lamps) with small signals

FUNCTION

The M63805P/FP/KP each have eight circuits consisting of
NPN transistor. The transistor emitters are all connected to
the GND pin. The transistors allow synchronous flow of
300mA collector current. A maximum of 35V voltage can be
applied between the collector and emitter.

PIN CONFIGURATION

1

IN1→

→

IN2

2

→

3

IN3

→

4

IN4

INPUT

→

5

IN5

→

613

IN6

→

IN7

7
8

→

IN8
GND

9

Package type

1

→

2

IN1

→

IN2

3

→

4

IN3

→

5

IN4

INPUT OUTPUT

IN5
IN6
IN7
IN8

GND

→

6

→

7

→

8

→

9

10

18

17
16

15
14

12
11
10

18P4G(P)

20

19

18
17

16

15

14

13
12

11

20P2N-A(FP)

Package type

20P2E-A(KP)

→

O1

→

O2

→

O3

→

O4

OUTPUT

→

O5

→

O6

→

O7

→

O8

→

NC

NCNC

→

O1

→

O2

→

O3

→

O4

→

O5

→

O6

→

O7

→

O8

→

NC

NC : No connection

CIRCUIT DIAGRAM

Vz=7V

INPUT

The diode, indicated with the dotted line, is parasitic, and
cannot be used.

10.5K
10K

The eight circuits share the GND.

OUTPUT

GND

Unit: Ω

Jan. 2000

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

PRELIMINARY

Notice: This is not a final specification.

Some parametric limits are subject to change.

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)

VCEO
IC
VI

Pd

Topr
Tstg

Collector-emitter voltage
Collector current
Input voltage

Power dissipation

Operating temperature
Storage temperature

Output, H
Current per circuit output, L

Ta = 25°C, when mounted
on board

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)

Symbol UnitParameter Test conditions

VO V0

C

I

VIN Input voltage

Output voltage
Collector current

(Current per 1 cir­cuit when 8 circuits
are coming on si­multaneously)

M63805P

M63805FP

M63805KP

Duty Cycle no more than 50%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 12%
Duty Cycle no more than 100%

8-UNIT 300mA TRANSISTOR ARRAY

M63805P
M63805FP
M63805KP

M63805P/FP/KP

RatingsSymbol Parameter Conditions Unit

–0.5 ~ +35

300

–0.5 ~ +35

1.79

1.10

0.68

–40 ~ +85

–55 ~ +125

Limits

min typ max

—
0
0
0
0
0
0
0

—

—

—

—

—

—

—

250
170
250
130
250
100

mA

35

mA

30

W

°C
°

V

V

C

V

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

CE(sat)

V
VIN(on)

hFE

Collector-emitter breakdown voltage
Collector-emitter saturation voltage
“On” input voltage

DC amplification factor

I

CEO = 10µA
IN = 1mA, IC = 10mA

I

IN = 2mA, IC = 150mA

I

IN = 1mA, IC = 10mA

I
V

CE = 10V, IC = 10mA

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

ton
toff

Turn-on time
Turn-off time

CL = 15pF (note 1)

Limits

min typ max

35
—
—
13
50

min typ max

—
—

—

—

—

19

—

Limits

140
240

—

0.2

0.8
23
—

—
—

V
V

V

—

ns
ns

Jan. 2000