MITSUBISHI M63802P, M63802FP, M63802GP, M63802KP Technical data
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63802P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
DESCRIPTION
M63802P, M63802FP, M63802GP and M63802KP are
seven-circuit Singe transistor arrays. The circuits are made
of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
FEATURES
●
Four package configurations (P, FP, GP and KP)
●
Medium breakdown voltage (BVCEO≥35V)
●
Synchronizing current (IC(max) = 300mA)
●
With zener diodes
●
Low output saturation voltage
●
Wide operating temperature range (Ta=–40 to +85 °C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
PIN CONFIGURATION
→
IN1
→
IN2
→
IN3
INPUT
IN4→
IN5→
IN6
IN7→
GND
→
Package type
CIRCUIT DIAGRAM
INPUT
Vz=7V
10.5k
1
2
3
4
5
611
7
8
→
16
O1
→
15
O2
→
14
O3
→
O4
13
12
10
9
OUTPUT
→
O5
→
O6
→
O7
NC
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
10k
NC : No connection
OUTPUT
GND
FUNCTION
The M63802P, M63802FP, M63802GP and M63802KP each
have seven circuits consisting of NPN transistor. The transistor emitters are all connected to the GND pin (pin 8).
The transistors allow synchronous flow of 300mA collector
current. A maximum of 35V voltage can be applied between
the collector and emitter.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
VCEO
IC
VI
Pd
Topr
Tstg
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted
on board
The seven circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
RatingsSymbol Parameter Conditions Unit
–0.5 ~ +35
300
–0.5 ~ +35
M63802P
M63802FP
M63802GP
M63802KP
1.47
1.00
0.80
0.78
–40 ~ +85
–55 ~ +125
Unit: Ω
V
mA
V
W
°C
°C
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63802P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol UnitParameter Test conditions
VO V0
IC
VIN Input voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
CE(sat)
V
VIN(on)
hFE
Output voltage
M63802P
Collector current
(Current per 1 circuit
M63802FP
when 7 circuits are
coming on simulta-
M63802GP
neously)
M63802KP
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
“On” input voltage
DC amplification factor
I
CEO = 10µA
IN = 1mA, IC = 10mA
I
IN = 2mA, IC = 150mA
I
IN = 1mA, IC = 10mA
I
V
Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
CE = 10V, IC = 10mA
Limits
min typ max
—
0
0
0
0
0
0
0
0
0
—
—
—
—
—
—
—
—
—
35
250
160
250
130
250
120
250
120
30
Limits
min typ max
35
—
—
13
50
—
—
—
19
—
—
0.2
0.8
23
—
mA
V
V
V
V
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
t
on
toff
NOTE 1 TEST CIRCUIT
Turn-on time
Turn-off time
INPUT Vo
Measured device
PG
50Ω
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, V
(2)Input-output conditions : R
(3)Electrostatic capacity C
connections and input capacitance at probes
L
= 220Ω, Vo = 35V
L
includes floating capacitance at
CL = 15pF (note 1)
R
L
OUTPUT
C
L
IH
= 18V
TIMING DIAGRAM
INPUT
OUTPUT
min typ max
50%
50%
ton toff
Limits
—
—
140
240
—
—
50%
ns
ns
50%
Jan. 2000
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