MITSUBISHI M63802P, M63802FP, M63802GP, M63802KP Technical data

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63802P/FP/GP/KP

7-UNIT 300mA TRANSISTOR ARRAY

DESCRIPTION

M63802P, M63802FP, M63802GP and M63802KP are
seven-circuit Singe transistor arrays. The circuits are made
of NPN transistors. Both the semiconductor integrated cir­cuits perform high-current driving with extremely low input­current supply.

FEATURES

●

Four package configurations (P, FP, GP and KP)

●

Medium breakdown voltage (BVCEO≥35V)

●

Synchronizing current (IC(max) = 300mA)

●

With zener diodes

●

Low output saturation voltage

●

Wide operating temperature range (Ta=–40 to +85 °C)

APPLICATION

Driving of digit drives of indication elements (LEDs and
lamps) with small signals

PIN CONFIGURATION

→

IN1

→

IN2

→

IN3

INPUT

IN4→
IN5→
IN6
IN7→
GND

→

Package type

CIRCUIT DIAGRAM

INPUT

Vz=7V

10.5k

1
2

3
4

5
611
7

8

→

16

O1

→

15

O2

→

14

O3

→

O4

13
12

10

9

OUTPUT

→

O5

→

O6

→

O7
NC

16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)

10k

NC : No connection

OUTPUT

GND

FUNCTION

The M63802P, M63802FP, M63802GP and M63802KP each
have seven circuits consisting of NPN transistor. The transis­tor emitters are all connected to the GND pin (pin 8).
The transistors allow synchronous flow of 300mA collector
current. A maximum of 35V voltage can be applied between
the collector and emitter.

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)

VCEO
IC
VI

Pd

Topr
Tstg

Collector-emitter voltage
Collector current
Input voltage

Power dissipation

Operating temperature
Storage temperature

Output, H
Current per circuit output, L

Ta = 25°C, when mounted
on board

The seven circuits share the GND.

The diode, indicated with the dotted line, is parasitic, and
cannot be used.

RatingsSymbol Parameter Conditions Unit

–0.5 ~ +35

300

–0.5 ~ +35

M63802P
M63802FP
M63802GP
M63802KP

1.47

1.00

0.80

0.78

–40 ~ +85

–55 ~ +125

Unit: Ω

V

mA

V

W

°C
°C

Jan. 2000

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63802P/FP/GP/KP

7-UNIT 300mA TRANSISTOR ARRAY

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)

Symbol UnitParameter Test conditions

VO V0

IC

VIN Input voltage

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

CE(sat)

V
VIN(on)

hFE

Output voltage

M63802P
Collector current
(Current per 1 circuit

M63802FP
when 7 circuits are
coming on simulta-

M63802GP
neously)

M63802KP

Collector-emitter breakdown voltage
Collector-emitter saturation voltage

“On” input voltage
DC amplification factor

I

CEO = 10µA
IN = 1mA, IC = 10mA

I

IN = 2mA, IC = 150mA

I

IN = 1mA, IC = 10mA

I
V

Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%

CE = 10V, IC = 10mA

Limits

min typ max

—
0
0
0
0
0
0
0
0
0

—

—

—

—

—

—

—

—

—

35
250
160
250
130
250
120
250
120

30

Limits

min typ max

35
—
—
13
50

—
—
—
19
—

—

0.2

0.8
23
—

mA

V

V
V

V

—

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

t

on

toff

NOTE 1 TEST CIRCUIT

Turn-on time
Turn-off time

INPUT Vo

Measured device

PG

50Ω

(1)Pulse generator (PG) characteristics : PRR = 1kHz,

tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, V
(2)Input-output conditions : R
(3)Electrostatic capacity C

connections and input capacitance at probes

L

= 220Ω, Vo = 35V

L

includes floating capacitance at

CL = 15pF (note 1)

R

L

OUTPUT

C

L

IH

= 18V

TIMING DIAGRAM

INPUT

OUTPUT

min typ max

50%

50%

ton toff

Limits

—
—

140
240

—
—

50%

ns
ns

50%

Jan. 2000

TYPICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63802P/FP/GP/KP

7-UNIT 300mA TRANSISTOR ARRAY

Thermal Dirtying Factor Characteristics

2.0

M63802P

1.5

M63802FP

1.0

M63802GP
M63802KP

0.5

Power dissipation Pd (W)

0

0 25 50 75 100

Ambient temperature Ta (°C)

Duty Cycle-Collector Characteristics

400

(M63802P)

300

200

•The collector current values

represent the current per circuit.

100

Collector current Ic (mA)

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 25°C

0

20 40 60 80

0

85

0.744

0.520

0.418

0.406

100

1~4
5

6
7

Input Characteristics

4

3

(mA)

I

2

Input current I

1

0

030252015105

Input voltage V

Duty Cycle-Collector Characteristics

(M63802P)

400

300

200

•The collector current values

represent the current per circuit.

100

Collector current Ic (mA)

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 85°C

0

0

20 40 60 80

Ta = –40°C

Ta = 25°C

I

(V)

Ta = 85°C

100

1~2

3
4

5
6
7

Duty cycle (%)

Duty Cycle-Collector Characteristics

(M63802FP)

400

300

200

•The collector current values

represent the current per circuit.

100

Collector current Ic (mA)

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta=25°C

0

20 40 60 80

0

Duty cycle (%)

100

1~3

4
5
6
7

Duty cycle (%)

Duty Cycle-Collector Characteristics

400

(M63802FP)

300

200

•The collector current values

represent the current per circuit.

100

Collector current Ic (mA)

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 85°C

0

0

20 40 60 80

Duty cycle (%)

100

1

2

3
4

5
6
7

Jan. 2000

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M63802P/FP/GP/KP

7-UNIT 300mA TRANSISTOR ARRAY

Duty Cycle-Collector Characteristics

400

(M63802GP/KP)

300

200

•The collector current values

100

represent the current per circuit.

Collector current Ic (mA)

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 25°C

0

0 10020 40 60 80

Duty cycle (%)

Output Saturation Voltage

Collector Current Characteristics

250

Ta = 25°C

IB = 3mA

200

150

IB = 2mA

IB = 1.5mA

IB = 1mA

1~2

3
4
5

6
7

Duty Cycle-Collector Characteristics

400

(M63802GP/KP)

300

200

•The collector current values

represent the current per circuit.

100

Collector current Ic (mA)

•Repeated frequency ≥ 10Hz

•The value the circle represents the value of

the simultaneously-operated circuit.

•Ta = 85°C

0

0 10020 40 60 80

Duty cycle (%)

Output Saturation Voltage

Collector Current Characteristics

100

Ta = 25°C

VI = 32V

VI = 28V

80

60

VI = 20V

VI = 16V

VI = 24V

1

2

3
4
5

6

7

100

IB = 0.5mA

50

Collector current Ic (mA)

0

0 0.2 0.4 0.6 0.8

Output saturation voltage V

Output Saturation Voltage

Collector Current Characteristics

100

II = 2mA

80

Ta = –40°C

60

40

Collector current Ic (mA)

20

0

0 0.05 0.10 0.15 0.20

Output saturation voltage V

CE(sat)

Ta = 25°C

Ta = 85°C

CE(sat)

(V)

(V)

40

20

Collector current Ic (mA)

0

0 0.05 0.10 0.15 0.20

Output saturation voltage V

DC Amplification Factor

Collector Current Characteristics

3

10

VCE = 10V

7

Ta = 25°C

5

FE

3
2

2

10

7
5

3

DC amplification factor h

2

1

10

0

2357 2357

10

10

1

10

Collector current Ic (mA)

VI = 12V

CE(sat)

2

23 57

(V)

10

3

Jan. 2000