MITSUBISHI M63800FP Technical data

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63800FP is a seven-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN tran­sistors. This semiconductor integrated circuit performs high­current driving with extremely low input-current supply.
FEATURES
Á High breakdown voltage (BV
CEO 50V)
Á High-current driving (Io(max) = –500mA) Á With output clamping diodes
Á
Driving available with CMOS IC output of 6-16V or with TTL output
Á Wide operating temperature range (Ta = –20 to +75°C) Á Output current-sourcing type
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic sys­tems and relays, solenoids, or small motors
FUNCTION
The M63800FP has seven circuits, which are made of input inverters and current-sourcing outputs. The outputs are made of PNP transistors and NPN Darlington transistors. The PNP transistor base current is constant. A spike-killer clamping diode is provided between each output pin and GND. V
S (pin 8) and GND (pin 9) are used commonly among
the eight circuits. The input has resistance of 3k, and a maximum of 10V can be applied. The output current is 500mA maximum. Supply voltage V
S is 50V maximum.
The M63800FP is enclosed in a molded small flat package, enabling space-saving design.
PIN CONFIGURATION
O1
 
O2
 
O3
 
OUTPUT
O4
 
O5
 
O6
 
O7
9
GNDV
INPUT
              
IN2 IN3 IN4 IN5 IN6 IN7
S
1IN1 2 3 4 5 6 7 8
16 15 14 13 12 11 10
Package type 16P2N-A
CIRCUIT DIAGRAM
20K
INPUT
The diode, indicated with the dotted line, is parasitic, and cannot be used.
3K
7.2K
1.5K
The seven circuits share the V
3K
S
and GND.
S
V
OUTPUT
GND
Unit :
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
#
VCEO VS VI IO IF VR Pd Topr Tstg
# : Unused I/O pins must be connected to GND.
Collector-emitter voltage Supply voltage Input voltage Output current Clamping diode forward current
#
Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature
Output, L
Current per circuit output, H
Ta = 25°C, when mounted on board
RatingsSymbol Parameter Conditions
–0.5 ~ +50
50
–0.5 ~ +10
–500 –500
50
1.00
–20 ~ +75
–55 ~ +125
Unit
V V
V mA mA
V
W
°C °C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
2.4
Limits
0 0
–350
50
V
mA
0
–100
5
0
0.2
10
V V
Limits
+
1.6
0.6
2.9
5.6
max
100
2.4
2.0
1.0
5.0
15.0 –2.4
100
µA
V
mA mA
V
µA
min typ
— — —
1.45 — — — —
–1.2
Symbol Unit
S
V
Supply voltage Output current
IO
(Current per 1 cir­cuit when 7 circuits are coming on si-
multaneously) VIH VIL
“H” input voltage
“L” input voltage
Parameter
Duty Cycle no more than 7%
Duty Cycle no more than 40%
min typ max
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol UnitParameter Test conditions
#
IS (leak) V
CE (sat)
II IS
VF IR
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
# : Unused I/O pins must be connected to GND.
Supply leak current
Collector-emitter saturation voltage
Input current
Supply current
Clamping diode forward voltage
#
Clamping diode reverse current
VS = 50V, VI = 0.2V
S = 10V, VI = 2.4V , IO = –350mA
V
S = 10V, VI = 2.4V , IO = –100mA
V
I = 3V
V
I = 10V
V
S = 50V, VI = 3V (all input)
V
F = –350mA
I
R = 50V
V
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
ton toff
Turn-on time
Turn-off time
C
L = 15pF (note 1)
TIMING DIAGRAMNOTE 1 TEST CIRCUIT
V
INPUT
PG
50 C
(1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, Z
I
= 0 to 2.4V
V (2) Input-output conditions : R (3) Electrostatic capacity C connections and input capacitance at probes
S
Measured device
OUTPUT
L
R
L
O
= 50
L
= 30, VS = 10V
L
includes floating capacitance at
INPUT
OUTPUT
Limits
min typ max
— —
50% 50%
50% 50%
ton
100
4800
toff
ns
ns
Aug. 1999
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