Mitsubishi M62216GP, M62216FP Datasheet

MITSUBISHI SEMICONDUCTOR<STD-Linear IC>

M62216FP/GP

Low Voltage Operation STEP-UP DC-DC Converter

DESCRIPTION

The M62216FP is designed as low voltage operation STEP-UP DC-DC converter. This IC can operate very low input voltage (over 0.9V) and low power dissipation (circuit current is less than 850µA). So, this IC suitable for power supply of portable system that using low voltage battery (DRY battery, rechargeable battery).

FEATURES

• Pre-Drive type PWM output (Pre-Drive only)

• Low voltage Operation • • • • • • • • • • • • VIN=0.9V min.

• Low Current Dissipation • • • • • • • • • • • • IB=850µA typ.

• Pre-Drive output current can be adjusted

• Built-in ON/OFF Function • • • • • • • • • • IB(OFF)=35µA typ.

• Application for STEP-DOWN Converter can be used

APPLICATION

DC-DC Converter for portable sets of battery used

PIN CONFIGURATION(TOP VIEW)

GND

1 2 3 4

OUTLINE: 8P2S-A(FP) 8P2X-A (GP)

DRIVE2 DRIVE1

PWM

8 7 6 5

BIAS ON/OFF IN FB

BLOCK DIAGRAM

VREF Iconst

Amp

6 5

IN FB

ON/OFF

7

OSC

Start

Start OSC

PWM Comp

4

GND

BIAS

8

DRIVE2

1

DRIVE1

2

PWM

3

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1

9812

MITSUBISHI SEMICONDUCTOR<STD-Linear IC>

M62216FP/GP

Low Voltage Operation STEP-UP DC-DC Converter

ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise noted)

Symbol

VIN

VBIAS VDRIVE1 VDRIVE2

IDRIVE1 IDRIVE2

Pd Topr Tstg

Input Voltage Bias Terminal Supply Voltage Drive1 Terminal Supply Voltage Drive2 Terminal Supply Voltage Drive1 Terminal Input Current Drive2 Terminal Input Current Power Dissipation Operating Temperature Storage Temperature

Parameter

Ta=25°C

Condition

Ratings Unit

15.5

15.5 100

10

440 (FP) 250 (GP)

-20 ~+85

-40 ~+150

V V V

V mA mA mW

°C °C

ELECTRICAL CHARACTERISTICS (Ta=25°C, VIN=1.7V, VOUT=VBIAS=3.0V, unless otherwise noted)

0.9

1.7

1.20

260

30 95

82

-1

Limits

850

35

1.26 10 20

70

800

45

125

87

1.0

0.03

2

0.65

Max.Typ.Min.

15 V 15

1200

47

1.32 30

60

155

92

0.5

1.2 1

1

0.3 3

0.75

Unit

Block Symbol Parameter Test Condition

VIN

All Device

Voltage Reference

Error Amp.

Osc.

ON/OFF

*1 : Setting range of BIAS voltage as same as setting range of output voltage .

VBIAS IB IB(OFF)

VREF ∆VREF

IIN

AV

IFB+ IFB-

fosc

DUTYmax

Vsat1

Vsat2 IL1 IL2

VPWM(L)

ION

VTH(ON)

Input Voltage Range BIAS Voltage Setting Range *1

BIAS Current BIAS Current at OFF Mode Reference Voltage BIAS Voltage Regulation of VREF Input Current Open Loop Voltage Gain FB Terminal Sink Current FB Terminal Source Current Oscillation Frequency Maximum ON Duty

Saturation Voltage between PWM Term. and DRIVE1 Term.

Saturation Voltage between PWM Term. and DRIVE2 Term.

Leak Current of DRIVE1 Terminal Leak Current of DRIVE2 Terminal

Output Low Voltage of PWM Terminal Input Current of ON/OFF Terminal

At ON Status Threshold Voltage of ON/OFF

Terminal

Use internal amp as Buffer-amp

VBIAS=1.7~15V IN = 1V / IM

fIN = 100Hz , Null Amp Operation

IN = 1.4V , FB = 1.25V / IM IN = 1.1V , FB = 1.25V / IM PWM Terminal Monitored

PWM Terminal Monitored , IN = 1.1 V

IDRIVE1=50mA, IDRIVE2=5mA

IN = 1.4V IN = 1.4V

IPWM = 1mA

V µA µA

V

mV

nA dB

µA µA

kHz

%

V0.25

V µA

µA

V µA

V

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2

Application circuit

(1). Standard Application circuit

VIN VOUT

MITSUBISHI SEMICONDUCTOR<STD-Linear IC>

M62216FP/GP

Low Voltage Operation STEP-UP DC-DC Converter

L

Di

56

7

ON/OFF

GNDFBIN

4

CIN

(2). Application circuit 1 (VIN ≥ 1.7V)

VIN VOUT

CIN

IN

7

ON/OFF

GNDFB

56

(3). Application circuit 2 (VOUT > 15V)

VIN VOUT

DRIVE1 DRIVE2

PWM

DRIVE2 DRIVE1

PWM

4

BIAS

8 1 2

3

RD2 RD1

Tr

CO

R1

VIN : 0.9 ~ 14V VOUT : 1.7 ~ 15V (VOUT > VIN)

R2

Tr

Di

RD2 RD1

R1

CO

VIN : 1.7 ~ 14V VOUT : 2.5V ~ 15V ( VOUT > VIN)

L

8 1

2 3

R2

Di

L

CIN

6

FBIN

7

ON/OFF

GND

45

BIAS DRIVE2 DRIVE1

PWM

8 1

2 3

(4). Application circuit for STEP-DOWN Circuit

VIN VOUT

CIN

6

7

ON/OFF

GNDFBIN

45

BIAS DRIVE2 DRIVE1

PWM

8 1 2 3

RD2

RD1

RD2

RD1

Tr

Di

VIN : 1.7 ~ 15V

CO

VOUT : 15V ~ ( VOUT > VIN)

R1

R2

L

CO

R1

VIN : 2.0 ~ 15V VOUT : 1.7V ~ 14V ( VOUT < VIN)

R2

( / 8 )

3

OFF STATE BIAS CURRENT vs.

BIAS VOLTAGE (ON/OFF=GND)

TYPICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR<STD-Linear IC>

M62216FP/GP

Low Voltage Operation STEP-UP DC-DC Converter

THERMAL DERATING

(ABSOLUTE MAXIMUM RATING)

600

500

FP

400

300

GP

200

100

0

0 25 50 75 100 125 150

AMBIENT TEMPERATURE Ta (°C)

BIAS CURRENT vs. AMBIENT

TEMPERATURE

1.6

VBIAS=1.7V

1.4

1.2

VBIAS=3.0V VBIAS=15V

BIAS CURRENT vs. BIAS VOLTAGE

1.6

1.4

1.2

1.0

0.8

0.6

0.4 0 2 4 6 8 10 12 14 16

80

60

(Ta=25°C)

BIAS VOLTAGE VBIAS (V)

Ta= -20°C Ta= +25°C

Ta= +85°C

1.0

0.8

0.6

0.4

-40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (°C)

OPEN LOOP GAIN vs. INPUT FREQUENCY

(Vin=0.1Vrms , Null Amp , Ta=25°C)

100

VBIAS=1.7V VBIAS=3.0V

80

60

40

20

0.01 0.1 1 10 100 INPUT FREQUENCY fin (KHz)

VBIAS=15V

40

20

0

0 2 4 6 8 10 12 14 16

BIAS VOLTAGE VBIAS (V)

FB VOLTAGE vs. FB SINK CURRENT

(VBIAS=3.0V, IN=1.4V)

1.25

1.00

0.75

0.50

0.25

0.00 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

FB SINK CURRENT IFB+ (mA)

Ta= -20°C Ta= +25°C

Ta= +85°C

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4

MITSUBISHI SEMICONDUCTOR<STD-Linear IC>

M62216FP/GP

Low Voltage Operation STEP-UP DC-DC Converter

FB SOURCE CURRENT vs. FB VOLTAGE

60

50

40

30

20

10

0

0 0.5 1.0 1.5 2.0 2.5 3.0

160

140

120

(VBIAS=3.0V, IN=1.1V)

Ta= -20°C Ta= +25°C Ta= +85°C

FB VOLTAGE VFB (V)

OSCILLATING FREQUENCY vs.

AMBIENT TEMPERATURE

(PWM Terminal Monitored, IN=1.1V)

VBIAS=1.7V VBIAS=3.0V VBIAS=15V

OSCILLATING FREQUENCY vs.

BIAS VOLTAGE

(PWM Terminal Monitored , Ta=25°C)

160

140

120

100

80

0 2 4 6 8 10 12 14 16

BIAS VOLTAGE VBIAS (V)

MAX ON DUTY vs. BIAS VOLTAGE

(PWM Terminal Monitored, IN=1.1V, Ta=25°C)

100

95

90

85

100

80

-40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (°C)

MAX ON DUTY vs. AMBIENT TEMPERATURE

(PWM Terminal Monitored , IN=1.1V)

100

VBIAS=1.7V

95

90

85

80

75

-40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (°C)

VBIAS=3.0V VBIAS=15V

80

75

0 2 4 6 8 10 12 14 16

BIAS VOLTAGE VBIAS (V)

SATURATION VOLTAGE BETWEEN PWM-DRIVE1

TERMINAL vs. INPUT CURRENT OF DRIVE1 TERMINAL

1.0

0.8

0.6

0.4

0.2

0.0

INPUT CURRENT OF DRIVE1 TERMINAL IDRIVE1 (mA)

(IDRIVE2=5mA, IN=1.1V, Ta=25°C)

VBIAS=1.7V VBIAS=3.0V VBIAS=9.0V VBIAS=15V

0 10 20 30 40 50 60 70

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5

MITSUBISHI SEMICONDUCTOR<STD-Linear IC>

M62216FP/GP

Low Voltage Operation STEP-UP DC-DC Converter

SATURATION VOLTAGE BETWEEN PWM-DRIVE1

TERMINAL vs. INPUT CURRENT OF DRIVE1 TERMINAL

0.5

0.4

0.3

0.2

0.1

0.0

INPUT CURRENT OF DRIVE1 TERMINAL IDRIVE1 (mA)

(VBIAS=3.0V, IN=1.1V, Ta=25°C)

IDRIVE2=2mA IDRIVE2=5mA

IDRIVE2=10mA

0 20 40 60 80 100 120

PWM OUTPUT LOW VOLTAGE

vs. PWM SINK CURRENT

0.6

0.5

0.4

(VBIAS=3.0V,IN=1.4V)

SATURATION VOLTAGE BETWEEN PWM-DRIVE2

TERMINAL vs. INPUT CURRENT OF DRIVE2 TERMINAL

1.7

1.5

1.3

1.1

0.9

0.7 0 2 4 6 8 10 12

INPUT CURRENT OF DRIVE2 TERMINAL IDRIVE2 (mA)

(IN=1.1V, Ta=25°C)

VBIAS=1.7V IDRIVE1=20mA VBIAS=3.0V IDRIVE1=50mA VBIAS=15V IDRIVE1=40mA

INPUT ON CURRENT

vs. AMBIENT TEMPERATURE

4.0

3.0

0.3

0.2

0.1

0.0 0 2 4 6 8 10 12

PWM SINK CURRENT (mA)

THRESHOLD VOLTAGE OF ON/OFF TERMINAL

vs. AMBIENT TEMPERATURE (VBIAS=3.0V)

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (°C)

Ta= -20°C

Ta=+25°C Ta=+85°C

2.0

1.0

0.0

-40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (°C)

MAX LOAD CURRENT FOR START-UP(*1)

200 175

150 125 100

75 50

25

0

0.8 1.0 1.2 1.4 1.6

vs. INPUT VOLTAGE

(Standard Application Circuit, Vo=3.0V, Ta=25°C)

INPUT VOLTAGE VIN (V)

VBIAS=VON=1.7V VBIAS=VON=3.0V

VBIAS=VON=15V

Tr:2SC3052-F, L:68uH, RD1:680Ω, RD2:1.6KΩ

Tr:2SC3439-H, L:22uH, RD1:1.3KΩ, RD2:3.3KΩ

( / 8 )

6

MITSUBISHI SEMICONDUCTOR<STD-Linear IC>

(Standard Application circuit:

VIN=1.5V,Vo=3.0V, Ta=25°C)

M62216FP/GP

Low Voltage Operation STEP-UP DC-DC Converter

EFFICIENCY vs. LOAD CURRENT

100

80

60

40

Tr:2SC3052-F

20

0

1 10 100 1000

LOAD CURRENT Io (mA)

Tr:2SC3439-H

EFFICIENCY vs. LOAD CURRENT

(Application circuit 1: VIN=3.0V,Vo=5.0V, Ta=25°C)

100

80

60

MAX LOAD CURRENT FOR START-UP(*2)

200 175

150 125 100

75 50

25

0

1.5 2.0 2.5 3.0 3.5 4.0

vs. INPUT VOLTAGE

(Application circuit 1: Vo=5.0V, Ta=25°C)

Tr:2SC3052-F,L:150µH, RD1:750Ω,RD2:3.6KΩ

Tr:2SC3439-H,L:22µH, RD1:1.3KΩ,RD2:6.8KΩ

INPUT VOLTAGE VIN (V)

40

Tr:2SC3052-F

20

0

1 10 100 1000

LOAD CURRENT Io (mA)

Tr:2SC3439-H

*1, *2 : These characteristics show the maximum output load current when start-up. Therefore, output voltage can grown-up to setting voltage less than a curve in the graph when using these external components value. ( • 2SC3052-F : hFE=250 ~ 500, 2SC3439-H : hFE=600 ~ 1200)

( / 8 )

7

Equation for Constants Calculation

MITSUBISHI SEMICONDUCTOR<STD-Linear IC>

M62216FP/GP

Low Voltage Operation STEP-UP DC-DC Converter

Constants

TON

TOFF

TON+TOFF

TOFF(MIN)

TON(MAX)

Ipk

L(MIN)

R1

RD1

RD2

Standard Application Circuit

VO + VF - VIN VIN - VCE(sat)

1

fosc

TON + TOFF

TON

1 +

TOFF

1

- TOFF(MIN)

fosc

2 * 1 + * (Io + IB)

(VIN - VCE(sat))

TON

TOFF

2

* TON(MAX)

2 * Vo * (Io + IB)

Vo

- 1 * R2

VREF

Vo - (VBE + Vsat1)

(Ipk / hFE) * A1

Vo - (VBE + Vsat2)

(Ipk / hFE) * A2

2

* fosc

Application Circuit 1 Application Circuit 2

VO + VF - VIN VIN - VCE(sat)

1

fosc

TON + TOFF

TON

1 +

TON + TOFF 1 +

TOFF

1

- TOFF(MIN)

fosc

2 * 1 + * Io

(VIN - VCE(sat))

TON TOFF

2

* TON(MAX)

2 * Vo * Io

Vo

VREF

Vo - (VBE + Vsat1)

(Ipk / hFE) * A1

Vo - (VBE + Vsat2)

(Ipk / hFE) * A2

- 1 * R2

2

* fosc

1

fosc

2 * 1 + * Io

(VIN - VCE(sat))

Vo

VREF

VIN - (VBE + Vsat1)

(Ipk / hFE) * A1

VIN - (VBE + Vsat2)

(Ipk / hFE) * A2

1

fosc

TON

TOFF

- TOFF(MIN) TON

TOFF

2

* TON(MAX)

2 * Vo * Io

- 1 * R2

2

* fosc

Constants

TON

TOFF

TON+TOFF

TOFF(MIN)

TON(MAX)

Ipk

L(MIN)

R1

RD1

RD2

STEP-DOWN Circuit

VO + VF

VIN - VCE(sat) - Vo

1

fosc

TON + TOFF

TON

1 +

TOFF

1

- TOFF(MIN)

fosc

2 * Io

(VIN - VCE(sat) - Vo) * TON(MAX)

∆Io

Vo

- 1 * R2

VREF

Vo - VBE - Vsat1

Ipk / hFE

VIN - Vsat2

(Ipk / hFE) * A3

Notice)

• VF : Forward voltage of external diode.

• VCE(sat) : Saturation voltage of external transistor.

• VBE : Voltage between Base - Emitter of external transistor.

• hFE : hFE of external transistor at saturating.

• A1 : Ratio of current into DRIVE1 terminal. (A1 = 0.8 ~ 0.9)

• A2 : Ratio of current into DRIVE2 terminal. (A2 = 1 - A1)

• A3 : Ratio of current into DRIVE2 terminal. (A3 = 0.1 ~ 0.2)

• Set R2 to several KΩ ~ several 10ths kΩ.

• Set current into DRIVE2 terminal more than 100µA. (Ipk / hFE) * A2 ≥ 100µA, (Ipk / hFE) * A3 ≥ 100µA,.

• Set ∆Io to 1/ 5 ~ 1/ 3 of maximum load current.

• The maximum rating of current of external parts (transistor, diode and inductor) are 1.5 to 2 times of Ipk.

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Mitsubishi M62216GP, M62216FP Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual