Mitsubishi M62021P, M62021L, M62021FP Datasheet
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components.
power supply and battery.
1
M62021L,P,FP
SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP
DESCRIPTION
The M62021 is a system IC that controls the memory backup
function of SRAM and microcomputer (internal RAM).
The IC outputs reset signals(RES/RES) to a microcomputer
at power-down and power failure.It also shifts the power
supply to RAM from main to backup,outputs a signal (CS) that
invokes standby mode,and alters RAM to backup circuit mode.
The M62021 contains,in a single chip,power supply monitor
and RAM backup functions needed for a microcomputer
system,so that the IC makes it possible to construct a system
easily and with fewer components compared with a
conventional case that uses individual ICs and discrete
FEATURES
•Built-in switch for selection between main power supply and
backup power supply to RAM.
•Small difference between input and output voltage
(IOUT=80mA,VIN=5V)0.2V typ
•Detection voltage (power supply monitor voltage)4.40V±0.2V
•Chip select signal output(CS)
Two channels of reset outputs(RES/RES)
•Power on reset circuit built-in
•Delay time variable by an external capacitance connected to
Ct pin
•Facilitates to form backup function with a few number of
components
APPLICATION
Power supply control systems for memory backup of
microcomputer system and SRAM boards with built-in
backup function that require switching between external
PIN CONFIGURATION (TOP VIEW)
8
CS
7
RES
6
GND
5
RES
4
Ct(DELAY CAPACITANCE)
3
VIN
2
VBAT
1
VOUT
Outline 8P5(L)
VBAT
VIN
1
2
3
4
Outline 8P4(P)
8P2S-A(FP)
VOUT
Ct(DELAY CAPACITANCE)
8
CS
7
RES
6
GND
5
RES
BLOCK DIAGRAM
VIN
3
RES
7
RES
5
R1
R2
+
1.24V
Com
RESET
CIRCUIT
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SW
DELAY
CIRCUIT
6
GND
D1
2
8
4
VOUT
VBAT
CS
Ct
1
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MITSUBISHI<Dig.Ana.INTERFACE>
M62021L,P,FP
SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP
ABSOLUTE MAXIMUM RATINGS(Ta=25°C, unless otherwise noted)
Symbol Ratings
VIN
IOUT
Pd
K
Topr
Tstg Storage temperature
Input voltage
Output current
Power dissipation
Thermal derating
Operating temperature
Parameter
(Ta≥25°C)
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise noted)
Symbol
Vs
Detection voltage
∆Vs
Hysteresis voltage
Vs/∆T
VDROP
VOH(Ct)
VOL(Ct)
VOH(RES)
VOH(RES)
VOL(RES)
VOH(CS)
VOL(CS)
VOPL(RES)
Note 1.Regarding conditions to measure VOH and VOL,voltage values are to be generated by internal resistance only and no external resistor is used.
2.These values are produced inserting an external resistor,RCS=1MΩ,between the CS pin and GND.
3.With no external resistor (10kΩ internal resistance only)
Temperature coefficient of detection voltage
Circuit current
ICC
Difference between input and output voltage
Ct output voltage (high level)
Ct output voltage (low level)
RES output voltage (high level)
RES output voltage (low level)VOL(RES)
RES output voltage (high level)
RES output voltage (low level)
CS output voltage (high level)
CS output voltage (low level) VIN=5V
Backup Di leak current
IR
VF
Backup Di forward direction voltage
tpd
Delay time
Response time
td
RES limit voltage of operation
Parameter
VIN(At the change from H L)
∆Vs=VSH-VSL
IOUT=0mA
VIN=5V
VIN=5V(Note1)
VIN=4V(Note1)
VIN=4V(Note1)
VIN=5V
VIN=5V(Note1)
VIN=4V
(Note2)
VIN=4V
VIN=0V,VBAT=3V
VBAT=3V
IF=10µA
VIN=0V
VIN=5V
(Note 3)
Conditions
Test conditions
(Note2)
5V,Ct=4.7µF
4V
VIN=4V
VIN=5V
IOUT=50mA
IOUT=80mA
(Note1)
ISINK=1mA
(Note1)
ISINK=1mA
(Note1)
ISINK=1mA
VIN=5V
VIN=0V
7
100
800(SIP)/625(DIP)/440(FP)
8(SIP)/6.25(DIP)/4.4(FP)
-20 ~ +75
-40 ~ +125
Limits
Min.
4.2
50 200
4.5
3.5
4.5
3.50
2.40
10
Typ.
4.4
2.0
7.5
0.125
0.2
5.0
0.02
4.0
0.02
0.05
5.0
0.02
0.05
3.57
2.47
0.08
0.1
0.54
27
5.0
0.65
Max.
4.6
4.0
12.0
0.25
0.4
0.1
0.2
0.2
0.3
±0.5
±0.5
0.6
55
25.0
Unit
V
mA
mW
mW/°C
°C
°C
Unit
V
mV100
%/°C0.005
mA
V
V
V
V
V
V
V
V
V
µA
V
ms
µs
V
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1.24VR1R2
D1
TEST CIRCUIT
CRT1234
56SW5
SW6
SW712
IF1
Vm4
SW4
SW3
4.7µ
Vm3
IF2
V2
Im2123Vm2
VIN
SW2
Im1
Measuring
instrument
(Note6)
(Note7)
SW112
V1
MITSUBISHI<Dig.Ana.INTERFACE>
M62021L,P,FP
SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP
V
M62021
1
2
8
4
VOUT
VBAT
CS
Ct
V
A
V
Vm1
A
V
RES
RES
3
Com
+
-
7
RESET
CIRCUIT
DELAY
CIRCUIT
5
6
GND
SWITCH MATRIX
ON
ON
ON
ON
ON
ON
ON
ON
ON
ON
S W
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
ON
7
1
OFF
1
1
OFF
1
OFF
OFF
1
1
OFF
1
2
3
4
5
6
2
4
5
1
2
1
1
(Note5)
Vm4
CRT
Vm1
2
1
OFF
1
6
2
OFF
1
1
3
2
2
3
OFF
ON
1
1
1
1
2
OFF
3
1
5
1
6
Symbol
Icc
Parameter
Circuit current
V1 V2 IF1
4V
5V
IF2
1 2 3 4 5 6
1
VOUT
Decrease
Vs
(VSL)
Detection voltage
(VIN negative-going)
CS
Ct
RES
from
5V
1
RES
3V
3V
-50mA
-80mA
1mA
1mA
1mA
10µA
1
1
1
1
1
1
1
2
VDROP
VOH(Ct)
VOL(Ct)
VOH(RES)
VOL(RES)
VOH(RES)
VOL(RES)
VOH(CS)
VOL(CS)
IR
VF
tpd
td
Difference between input and output voltage
Ct output voltage(high level)
Ct output voltage(low level)
RES output voltage(high level)
RES output voltage(low level)
RES output voltage(high level)
RES output voltage(low level)
CS output voltage(high level)(Note 4)
CS output voltage(low level)
Backup Di leak current
Backup Di forward direction voltage
Delay time
Response time
VOUT
CS
RES
5V
5V
4V
4V
5V
5V
4V
4V
0V
5V
5V
0V
0V
RES
Notes 4.To measure VOH(CS),insert a 1MΩ resistor between the CS pin and GND.
5. While monitoring each output by Vm4 or CRT,measure the input voltage Vm1 when the output goes from H to L and L to H.Regarding VSH,raise VIN
from 4V and measure the input voltage Vm1 when the output goes from H to L and L to H.∆Vs is VSH-VSL.
6. To measure delay time, change VIN from 0V to 5V and compare,with respect to each pin,the positive-going edge observed on a monitor with that
of VIN.To measure response time,change VIN from 5V to 4V and compare,with respect to each pin,the negative-going edge observed on a monitor
with that of VIN.
7.Set the switch to OFF when measuring response time.
Im1
Vm2
Vm4
Vm4
Vm4
Vm4
Im2
Vm3
CRT
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