Mitsubishi M54587P, M54587FP Datasheet
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54587P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54587P and M54587FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are
made of PNP and NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with extremely low input-current supply.
FEATURES
●
High breakdown voltage (BVCEO ≥ 50V)
●
High-current driving (IC(max) = 500mA)
●
“L” active level input
●
With input diode
●
With clamping diodes
●
Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and MOS-bipolar logic
IC interfaces
FUNCTION
The M54587 is produced by adding PNP transistors to
M54585 inputs. Eight circuits having active L-level inputs are
provided.
Resistance of 7kΩ and diode are provided in series between
each input and PNP transistor base. The input diode is intended to prevent the flow of current from the input to the
V
CC. Without this diode, the current flow from “H” input to the
V
CC and the “L” input circuits is activated, in such case where
one of the inputs of the 8 circuits is “H” and the others are “L”
to save power consumption. The diode is inserted to prevent
such misoperation.
This device is most suitable for a driver using NMOS IC output especially for the driver of current sink.
Collector current is 500mA maximum. Collector-emitter supply voltage is 50V.
The M54587FP is enclosed in a molded small flat package,
enabling space saving design.
PIN CONFIGURATION
INPUT
NC
IN1
IN2
IN3
IN4
IN5
IN6
IN7
IN8
GND
1
2
3
4
5
6
7
8
9
10
20
COM COMMON
19
O1
18
O2
17
O3
16
O4
15
O5
14
O6
13
O7
12
O8
11
V
20P4(P)
Package type
20P2N-A(FP)
CIRCUIT DIAGRAM (EACH CIRCUIT)
7K
INPUT
7K
The eight circuits share the Vcc, COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
2.7K
7.2K 3K
OUTPUT
CC
NC : No connection
V
CC
COM
OUTPUT
GND
Unit : Ω
Mar.2002
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54587P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol Parameter Conditions Unit
VCC
VCEO
VI
IC
IF
VR
Pd
Topr
Tstg
Supply voltage
Collector-emitter voltage
Input voltage
Collector current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
CC
V
IC
VIH
VIL
Supply voltage
Collector current
Per channel
“H” input voltage
“L” input voltage
Parameter
CC = 5V , Duty Cycle
V
P : no more than 6%
FP : no more than 5%
CC = 5V , Duty Cycle
V
P : no more than 34%
FP : no more than 15%
min typ max
V
CC–0.7
Limits
4
0
5
—
400
Unit
8
V
mA
0
—
—
0
—
200
CC
V
VCC–3.6
V
V
Ratings
10
–0.5 ~ +50
CC
–0.5 ~ V
500
500
50
1.79/1.1
–20 ~ +75
–55 ~ +125
V
V
V
mA
mA
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
V
CE(sat)
II
VF
IR
ICC
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Clamping diode forward volltage
Clamping diode reverse current
Supply current (AN only Input)
DC amplification factor
I
CEO = 100µA
V
V
F = 400mA
I
V
V
V
I = VCC–3.6V
I = VCC–3.6V
R = 50V
CC = 5V, VI = VCC–3.5V
CC = 5V , VCE = 4V, I C = 350mA, Ta = 25°C
IC = 400mA
C = 200mA
I
min typ max
2000
✽ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained
under any conditions.
Limits
✽
50
—
—
—
—
—
—
—
1.2
0.95
–290
1.4
0.1
1.9
3500
—
2.4
1.6
–600
2.4
100
3
—
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
ton
toff
Turn-on time
Turn-off time
CL = 15pF (note 1)
min typ max
Limits
—
—
120
2400
—
—
V
V
µA
V
µA
mA
—
ns
ns
Mar.2002
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