Mitsubishi M54567P, M54567FP Datasheet

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54567P/FP

4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION

M54567P and M54567FP are four-circuit Darlington transis­tor arrays with clamping diodes. The circuits are made of
PNP and NPN transistors. Both the semiconductor inte­grated circuits perform high-current driving with extremely
low input-current supply.

FEATURES

Á High breakdown voltage (BV

CEO ≥ 50V)

Á High-current driving (Ic(max) = 1.5A)
Á With clamping diodes
Á Driving available with NMOS IC output
Á Wide operating temperature range (Ta = –20 to +75°C)

APPLICATION

Drives of relays and printers, digit drives of indication ele­ments (LEDs and lamps), and power amplification

FUNCTION

The M54567P and M54567FP each have four circuits, which
are made of PNP transistors and NPN Darlington transistors.
The input has 8kΩ, and a spike-killer clamping diode is pro­vided between the output pin (collector) and COM pin. All
output transistor emitters are connected to the GND pin.
Collector current is 1.5A maximum. The maximum collector­emitter voltage is 50V.
The M54567FP is enclosed in a molded small flat package,
enabling space-saving design.

PIN CONFIGURATION

1

V

OUTPUT1

INPUT1

INPUT2

OUTPUT2

CC

2

O1←

IN1→

3
4




GND GND



5

IN2→

6

O2←

7
8

V

CC

COM COMMON

16

→O4

15

←IN4

14
13





12

←IN3

11

→O3

10

9

COM COMMON

16P4(P)

Package type 16P2N-A(FP)

CIRCUIT DIAGRAM

22K

INPUT

The diode, indicated with the dotted line, is parasitic, and cannot
be used.

8K

The four circuits share the COM and GND.

2K

5.5K 3K

OUTPUT4
INPUT4

INPUT3
OUTPUT3

CC

V
COM

OUTPUT

GND

Unit : Ω

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)

CC

V
VCEO
IC
VI
VR

F

I
Pd

Topr
Tstg

Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Clamping diode reverse voltage

Clamping diode forward current
Power dissipation

Operating temperature
Storage temperature

Output, H
Current per circuit output, L

Pulse Width ≤ 10ms, Duty Cycle ≤ 5%
Pulse Width ≤ 100ms, Duty Cycle ≤ 5%
Ta = 25°C, when mounted on board

Ratings UnitSymbol Parameter Conditions

10

–0.5 ~ +50

1.5

–0.5 ~ +30

50

1.5

1.0

1.92(P)/1.00(FP)
–20 ~ +75

–55 ~ +125

V
V
A
V
V

A

W

°C
°C

Aug. 1999

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54567P/FP

4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol Unit

VCC
VO

Supply voltage
Output voltage
Collector current

(Current per 1 cir-

IC

cuit when 4 circuits
are coming on si-

multaneously)
VIH
VIL

“H” input voltage

“L” input voltage

Parameter

CC = 5V, Duty Cycle

V
P : no more than 4%
FP : no more than 2%

V

CC = 5V, Duty Cycle

P : no more than 18%
FP : no more than 9%

min typ max

CC–0.5

V

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol UnitParameter Test conditions

CEO = 100µA

V

(BR) CEO

ICC
VCE (sat)

II
IR

VF
hFE

+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any

conditions.

Collector-emitter breakdown voltage

Supply current (One circuit coming on)

Collector-emitter saturation voltage

Input current

Clamping diode reverse current

Clamping diode forward voltage

DC amplification factor

I

CC = 6V, VI = 0.5V

V

CC = 4V, VI = 0.5V, IC = 1.25A

V

CC = 4V, VI = 0.5V, IC = 0.7A

V

I = VCC–3.5V

V

I = VCC–6V

V

R = 50V

V

F = 1.25A, VCC open

I

CC = 4V, VCE = 4V, IC = 1A, Ta = 25°C

V

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

ton
toff

Turn-on time

Turn-off time

CL = 15pF (note 1)

Limits

50

1.25

6

V
V

4
0

0

5

—
—

A

0

0

—
—

—

0.7

CC

V

VCC–3.5

V
V

Limits

+

3.0

1.6

1.1

1.6

max

—

4.5

2.2

1.7

–0.6

–0.95

100

2.3

—

V

mA

V

mA

µA

V

—

min typ

50
—
—
—
—
—
—
—

4000

30000

—

–0.3

–0.58

—

Limits

min typ max

—
—

190

5300

—
—

ns
ns

INPUT

PG

50Ω C

(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z

I = 0.5 to 4V

V
(2) Input-output conditions : R
(3) Electrostatic capacity C
connections and input capacitance at probes

VCC VO

Measured device

OPEN

O = 50Ω

L = 8.3Ω, VO = 10V, VCC = 4V

L includes floating capacitance at

RL

L

OUTPUT

TIMING DIAGRAMNOTE 1 TEST CIRCUIT

INPUT

OUTPUT

50% 50%

50% 50%

ton

toff

Aug. 1999