Mitsubishi M54534P, M54534FP Datasheet

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54534P/FP

6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE

DESCRIPTION

M54534P and M54534FP are six-circuit transistor arrays.
The circuits are made of NPN transistors. Both the semicon­ductor integrated circuits perform high-current driving with
extremely low input-current supply.

FEATURES

●

Medium breakdown voltage (BVCEO ≥ 20V)

●

High-current driving (Ic(max) =320mA)

●

With clamping diodes

●

Wide input voltage range (VI = –25 to +20V)

●

Wide operating temperature range (Ta = –20 to +75°C)

●

With strobe input

APPLICATION

Drives of relays and printers, digit drives of indication ele­ments (LEDs and lamps).

FUNCTION

The M54534P and M54534FP each have six circuits consist­ing of NPN transistors. Each input has a diode and 1.6kΩ
esistor in series. Each input is connected, and each output
is connected spike-killer clamping diode, emitters of each
transistor is connected to GND (pin 8), strobe input is con­nected to (pin 1), clamping diode is connected COM pin (pin

9) and V

CC is connected to the pin 16 in common.

The collector current is 320mA maximum. Collector-emitter
supply voltage is 20V maximum.
M54534FP is enclosed in a molded small flat package, en­abling space-saving design.

PIN CONFIGURATION (TOP VIEW)

INPUT

IN1→
IN2→
IN3→
IN4→
IN5→
IN6→

GND

1STROBE INPUT STB→
2
3
4
5
6
7
8

VCC

16

→O1

15
14

→O2

13

→O3

12

→O4

11

→O5

10

→O6

COM COMMON

9

OUTPUT

16P4(P)

Outline 16P2N-A(FP)

CIRCUIT SCHEMATIC (EACH CIRCUIT)

380

INPUT

The diodes shown by broken line are parasite diodes and must not
be use.

1.6k

20k

STB

STROBE INPUT

The six circuits share the STB, COM, V

2k

CC

V

COM

OUTPUT

GND

, GND.

Unit : Ω

CC

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)

VCC
VCEO
IC
VI
V(STB)
IF
VR
Pd
Topr
Tstg

Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Strobe input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature

Output, H
Current per circuit output, L

Ta = 25°C, when mounted on board

RatingsSymbol Parameter Conditions Unit

10

–0.5 ~ +20

320
–25 ~ +20
–0.5~ +20

320

20

1.47/1.00

–20 ~ +75

–55 ~ +125

V
V

mA

V
V

mA

V

W

°C
°C

Aug.1999

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE

FUNCTIONAL T ABLE

IN

L
H
L
H

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol Unit

VCC
VO

IC

IH

V

VIL
VIH(STB)
VIL(STB)

STB

L

L
H
H

OUT

H
H
H

L

Parameter

Supply voltage
Output voltage

VCC = 6.5V, Duty Cycle
P : no more than 25%

Collector current
Per channel

FP : no more than 15%
VCC = 6.5V, Duty Cycle

P : no more than 65%
FP : no more than 35%

“H” Input voltage
“L” Input voltage
“H” Input voltage (strobe input)
“L” Input voltage

(strobe input)

Limits

min typ max

—

3

3.2

2.4

—

0

—

0

—

0

—
—

0

—
—

0

20

300

150

18

0.7
18

0.2

V

8

V

mA

V
V
V
V

M54534P/FP

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

VCE (sat)

II
I

IR

II(STB)
IR(STB)
VF
IR
ICC

hFE

+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any

conditions.

Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current

Input reverse current
Strobe input current
Strobe input reverse current
Clamping diode forward voltage
Clamping diode reverse current
Supply current

DC amplification factor

VCC = 8V, VI = 3.2V, VI(STB) = 0.2V, ICEO = 100µA
VI = 3.2V

V
VCC = 8V, VI = 3.2V, VI(STB) = 2.4V

V
V
V

F = 320mA

I
V
V
V

V

CC = 6.5V, IC = 250mA

I(STB) = 2.4V

CC = 8V, VI = –25V
CC = 8V, VI = 3.2V (all input), VI(STB) = 0.2V
CC = 8V , VI = 0V, VI(STB) = 20V

R = 20V
CC = 8V, VI = 3.2V (all input), VI(STB) = 2.4V
CE = 4V, VCC = 6.5V, IC = 300mA, Ta = 25°C,

I(STB) = 2.4V

V

CC = 3V, IC = 120mA

V

min typ

1000

Limits

+

max

20

V
V

mA

µA

mA

µA

V

µA

mA

—

—

20
—
—
—
—
—
—
—
—
—

0.3

0.15

0.5

—

–7.9

—

1.4
—
120

3000

—

0.85

0.5

1.4
–20
–20

2.4
100
200

—

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

t
toff

on

Turn-on time
Turn-off time

L = 15pF (note 1)

C

min typ max

Limits

—
—

22

1200

ns

—

ns

—

Aug.1999

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54534P/FP

6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE

TIMING DIAGRAMNOTE 1 TEST CIRCUIT

V

INPUT V

PG

50Ω

(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
V

P

= 3.2V
(2) Input-output conditions : RL = 40Ω, VO = 10V, VCC = V
(3) Electrostatic capacity C
connections and input capacitance at probes

CC

Measured device

STB

P-P

TYPICAL CHARACTERISTICS

Thermal Derating Factor Characteristics

2.0

M54534P

1.5

O

R

L

OPEN

O

= 50Ω

L

includes floating capacitance at

OUTPUT

L

C

STB

= 6.5V

INPUT

OUTPUT

50% 50%

50% 50%

ton

Output Saturation Voltage

Collector Current Characteristics

400

300

toff

M54534FP

1.0

0.5

Power dissipation Pd (W)

0

0

25 50 75 100

Ambient temperature Ta (°C)

Duty-Cycle-Collector Characteristics

(M54534P)

400

300

200

•The collector current values

100

Collector current Ic (mA)

represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 25°C, V

0

0

CC = 6.5V

20 40 60 80 100

1~3
4

5
6

200

VI = 3.2V
V

CC

V

100

Collector current Ic (mA)

0

0 0.1 0.2 0.3 0.4 0.5

STB

Output saturation voltage V

Duty-Cycle-Collector Characteristics

(M54534P)

400

300

200

•The collector current values
represent the current per circuit.

100

Collector current Ic (mA)

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 75°C, V

0

0

CC = 6.5V

20 40 60 80 100

= 3V

= 2.4V

Ta = 75°C
Ta = 25°C
Ta = –20°C

CE

(sat) (V)

1,2

3

4

5
6

Duty cycle (%)

Duty cycle (%)

Aug.1999

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54534P/FP

6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE

Duty-Cycle-Collector Characteristics

(M54534FP)

400

300

200

•The collector current values
represent the current per circuit.

100

Collector current Ic (mA)

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 25°C, V

0

0

CC

= 6.5V

20 40 60 80 100 0

Duty cycle (%)

DC Amplification Factor

Collector Current Characteristics

4

10

7
5

FE

3

3

10

7
5

3

DC amplification factor h

2

10

1

10

VCC = 6.5V, V
V

CE

357

10

= 4V

Ta = 75°C
Ta = 25°C
Ta = –20°C

2

I(STB)

= 2.4V

357

10

1,2

3

4

5
6

3

Duty-Cycle-Collector Characteristics

(M54534FP)

400

300

200

•The collector current values
represent the current per circuit.

100

Collector current Ic (mA)

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 75°C, V

0

CC

= 6.5V

20 40 60 80 100

Duty cycle (%)

Grounded Emitter Transfer Characteristics

400

300

VCC = 6.5V, V
V

CE

= 4V

Ta = 75°C
Ta = 25°C
Ta = –20°C

I(STB)

= 2.4V

200

100

Collector current Ic (mA)

0

01234

1

2

3

4

5

6

Collector current Ic (mA)

Input Characteristics

10

VCC = 8V

STB

= 2.4V

V

(mA)

I

8

6

Ta = 75°C
Ta = 25°C
Ta = –20°C

4

Input current I

2

0

02051015

Input voltage VI (V)

I

Input voltage V

(V)

Supply Current Characteristics (common)

200

V

STB

= 2.4V

I

= 3.2V

V

Ta = 75°C
Ta = 25°C
Ta = –20°C

(mA)

CC

150

100

50

Supply current I

0

0246810

CC

Supply voltage V

(V)

Aug.1999

Clamping Diode Characteristics

400

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54534P/FP

6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE

300

(mA)

F

200

100

Forward bias current I

0

0 0.5 1.0 1.5 2.0

Ta = 75°C
Ta = 25°C
Ta = –20°C

Forward bias voltage V

F

(V)

Aug.1999