Mitsubishi M54532P, M54532FP Datasheet

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54532P/FP

4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION

M54532P and M54532FP are four-circuit Darlington transis­tor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.

FEATURES

Á High breakdown voltage (BV

CEO ≥ 50V)

Á High-current driving (Ic(max) = 1.5A)
Á With clamping diodes
Á Wide operating temperature range (Ta = –20 to +75°C)

APPLICATION

Drives of relays and printers, digit drives of indication ele­ments (LEDs and lamps), and power amplification

FUNCTION

The M54532P and M54532FP each have four circuits con­sisting of NPN Darlington transistors. They have resistance
of 340Ω between input transistor bases and input pins. A
clamping diode is provided between each output pin (collec­tor) and COM pin. The output transistor emitters are all con­nected to the GND pin.
The collector current is 1.5A maximum. Collector-emitter
supply voltage is 50V maximum.
The M54532FP is enclosed in a molded small flat package,
enabling space-saving design.

PIN CONFIGURATION

1

COMCOMMON

OUTPUT1

INPUT1

INPUT2 IN2→

OUTPUT2

2

O1←

IN1→

3
4




GND GND



5
6
7

O2←

COMCOMMON

8

16P4(P)

Package type 16P2N-A(FP)

NC

16

→O4

15
14
13
12
11
10

9

OUTPUT4

←IN4

INPUT4





←IN3

INPUT3

→O3

OUTPUT3

NC

NC : No connection

CIRCUIT DIAGRAM

INPUT

The diode, indicated with the dotted line, is parasitic, and cannot
be used.

340

5.5K

3K

The four circuits share the COM and GND.

COM
OUTPUT

GND

Unit : Ω

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol Parameter Conditions Unit
VCEO
IC
VI
VR

IF
Pd

Topr
Tstg

Collector-emitter voltage
Collector current
Input voltage
Clamping diode reverse voltage

Clamping diode forward current
Power dissipation

Operating temperature
Storage temperature

Output, H
Current per circuit output, L

Pulse Width ≤ 10ms, Duty Cycle ≤ 5%
Pulse Width ≤ 100ms, Duty Cycle ≥ 5%
Ta = 25°C, when mounted on board

Ratings

–0.5 ~ +50

1.5

–0.5 ~ +10

50

1.5

1.25

1.92(P)/1.00(FP)
–20 ~ +75

–55 ~ +125

Aug. 1999

V
A
V
V

A

W

°C
°C

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

ton

50% 50%

50% 50%

toff

INPUT

OUTPUT

M54532P/FP

4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)

ParameterSymbol

V

I

C

VIH
VIL

O

Output voltage
Collector current

(Current per 1 cir­cuit when 4 circuits
are coming on si­multaneously)

“H” input voltage
“L” input voltage

Duty Cycle
P : no more than 4%
FP : no more than 2%

Duty Cycle
P : no more than 18%
FP : no more than 9%

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)

Symbol UnitParameter Test conditions

V

(BR) CEO

VCE (sat)
II

IR
VF
hFE

+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any

conditions.

Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current

Clamping diode reverse current
Clamping diode forward voltage
DC amplification factor

ICEO = 100µA

I = 2mA, IC = 1.25A

I

I = 2mA, IC = 0.7A

I

I = 3V

V

R = 50V

V

F = 1.25A

I

CE = 4V, IC = 1A, Ta = 25°C

V

Limits

min typ max

0
0

0
3

0

—
—

—

50

1.25

0.7

—
—

0.4

Unit

V

A

6

V
V

Limits

+

1.3

1.1

1.6

max

—

2.2

1.7

8.5

5

100

2.3
—

V
V

mA

µA

V

—

min typ

50
—
—
—
—
—
800

7000

—

—

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)

Symbol UnitParameter Test conditions

ton
toff

Turn-on time
Turn-off time

L = 15pF (note 1)

C

TIMING DIAGRAMNOTE 1 TEST CIRCUIT

OPEN

O

V

R

L

OUTPUT

L

INPUT

Measured device

PG

50Ω C

(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
V

P

= 3V
(2) Input-output conditions : RL = 8.3Ω, VO = 10V
(3) Electrostatic capacity C
connections and input capacitance at probes

P-P

O

= 50Ω

L

includes floating capacitance at

Limits

min typ max

—
—

10

500

—
—

ns
ns

Aug. 1999

TYPICAL CHARACTERISTICS

Thermal Derating Factor Characteristics

Ambient temperature Ta (°C)

M54532FP

M54532P

Power dissipation Pd (W)

0

0

0.5

1.0

1.5

2.0

25 50 75 100

II = 2mA

Output Saturation Voltage

Collector Current Characteristics

Output saturation voltage V

CE

(sat) (V)

0

0

0.5

1.0

Ta = –20°C

Ta = 25°C

Ta = 75°C

1.5

2.0

0.5 1.0 1.5 2.0

Collector current Ic (A)

Duty-Cycle-Collector Characteristics

(M54532P)

Duty cycle (%)

•The collector current values
represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 25°C

0

0

0.5

1.0

1.5

2.0

➀

➁
➂

➃

20 40 60 80 100

Collector current Ic (A)

Duty cycle (%)

0

0

0.5

1.0

1.5

2.0

➀
➁

➂
➃

20 40 60 80 100

Collector current Ic (A)

Duty cycle (%)

0

0

0.5

1.0

1.5

2.0

➀
➁

➂
➃

20 40 60 80 100

Collector current Ic (A)

Duty cycle (%)

0

0

0.5

1.0

1.5

2.0

➀
➁

➂

➃

20 40 60 80 100

Collector current Ic (A)

Duty-Cycle-Collector Characteristics

(M54532P)

•The collector current values
represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 75°C

•The collector current values
represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 25°C

•The collector current values
represent the current per circuit.

•Repeated frequency ≥ 10Hz

•The value in the circle represents the
value of the simultaneously-operated circuit.

•Ta = 75°C

Duty-Cycle-Collector Characteristics

(M54532FP)

Duty-Cycle-Collector Characteristics

(M54532FP)



MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54532P/FP

4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

Aug. 1999

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54532P/FP

4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DC Amplification Factor

Collector Current Characteristics

5

10

7

VCE = 4V

5
3

FE

2

4

10

7
5

3
2

3

10

7
5

DC amplification factor h

3
2

2

10

1

10

23 57

Ta = 75°C

2

10

Collector current Ic (mA)

Input Characteristics

25

(mA)

I

20

15

Ta = –20°C

10

Input current I

5

0

246810

0

23 57

Ta = 25°C

Ta = 25°C

Ta = –20°C

3

10

23 57

Ta = 75°C

10

Grounded Emitter Transfer Characteristics

1.6

VCE = 4V

1.2

0.8

Ta = 75°C

0.4

Collector current Ic (A)

4

0

0

Ta = 25°C

Ta = –20°C

0.5 1.0 1.5 2.0

Input voltage V

I

(V)

Clamping Diode Characteristics

2.0

(A)

1.5

F

1.0

0.5

0

0

Ta = 75°C

0.5 1.0 1.5 2.0

Forward bias current I

Ta = 25°C

Ta = –20°C

Input voltage V

I

(V)

Forward bias voltage V

F

(V)

Aug. 1999