Mitsubishi M54523P, M54523FP Datasheet
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54523P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M54523P and M54523FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
●
High breakdown voltage (BVCEO ≥ 50V)
●
High-current driving (IC(max) = 500mA)
●
With clamping diodes
●
Driving available with PMOS IC ouput
●
Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and interfaces between standard
MOS-bipolar logic IC
FUNCTION
The M54523P and M54523FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 2.7kΩ between input transistor bases and input
pins. A spike-killer clamping diode is provided between each
output pin (collector) and COM pin. The output transistor
emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply
voltage is 50V maximum.The M54523FP is enclosed in a
molded small flat package, enabling space-saving design.
PIN CONFIGURATION
IN1→
1
IN2→
2
IN3→
3
IN4→
IN5→
IN6
IN7→
GND
4
5
→
6
7
8
INPUT OUTPUT
→
16
O1
→
15
O2
→
14
O3
→
13
O4
→
12
O5
→O6
11
→O7
10
→COM COMMON
9
16P4(P)
Package type
CIRCUIT DIAGRAM
INPUT
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
2.7k
5k
The seven circuits share the COM and GND
16P2N-A(FP)
3k
COM
OUTPUT
GND
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
RatingsSymbol Parameter Conditions Unit
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
V
mA
V
mA
V
W
°C
°C
Jan.2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54523P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
3.4
Limits
0
—
0
—
400
50
V
mA
—
0
—
—
—
0
200
25
25
0.6
V
V
Limits
min typ* max
50
—
—
—
—
—
—
1000
—
1.2
1.0
1.2
9.5
1.4
—
2500
—
2.4
1.6
1.8
18
2.4
100
—
V
V
mA
V
µA
—
Symbol Unit
Parameter
min typ max
VO Output voltage
Duty Cycle
P : no more than 8%
FP : no more than 8%
Duty Cycle
P : no more than 30%
FP : no more than 25%
I
C ≤ 400mA
C ≤ 200mA
I
3.85
IC
VIH
VIL
Collector current
(Current per 1 circuit when 7 circuits
are coming on simultaneously)
“H” input voltage
“L” input voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
CE(sat)
V
II
VF
IR
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
* : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained un-
der any conditions.
CEO = 100µA
I
I = 3.85V, IC = 400mA
V
I = 3.4V, IC = 200mA
V
I = 3.85V
V
I = 25V
V
F = 400mA
I
R = 50V
V
CE = 4V, IC = 350mA, Ta = 25°C
V
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
ton
toff
NOTE 1 TEST CIRCUIT
Turn-on time
Turn-off time
INPUT
Measured device
PG
50Ω
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω
P = 3.85VP-P
V
(2)Input-output conditions : RL = 25Ω, Vo = 10V
(3)Electrostatic capacity C
at connections and input capacitance at probes
OPEN
L includes floating capacitance
CL = 15pF (note 1)
Vo
RL
OUTPUT
L
C
TIMING DIAGRAM
INPUT
OUTPUT
50%
ton toff
Limits
min typ max
—
—
10
120
—
—
50%
ns
ns
50%50%
Jan.2000
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