Mitsubishi M54519P, M54519FP Datasheet
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54519P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both
the semiconductor integrated circuits perform high-current
driving with extremely low input-current supply.
FEATURES
Á High breakdown voltage (BV
CEO ≥ 40V)
Á High-current driving (Ic(max) = 400mA)
Á Driving available with PMOS IC output
Á Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
PIN CONFIGURATION
INPUT OUTPUT
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
GND
1IN1→
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
INPUT
20K
20K
2K
→O1
→O2
→O3
→O4
→O5
→O6
→O7
NC
NC : No connection
OUTPUT
GND
FUNCTION
The M54519P and M54519FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resis-
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
tance of 20kΩ between input transistor bases and input pins.
The output transistor emitters are all connected to the GND
pin (pin 8).
Collector current is 400mA maximum. Collector-emitter supply voltage is 40V maximum.
The M54519FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
V
IC
VI
Pd
Topr
Tstg
CEO
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
The seven circuits share the GND.
RatingsSymbol Parameter Conditions Unit
–0.5 ~ +40
400
–0.5 ~ +40
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Unit : Ω
V
mA
V
W
°C
°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54519P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol Unit
VO
Output voltage
Collector current
(Current per 1 cir-
C
I
cuit when 7 circuits
are coming on simultaneously)
VIH
VIL
“H” input voltage
“L” input voltage
Parameter
Duty Cycle
P : no more than 8%
FP : no more than 6%
Duty Cycle
P : no more than 30%
FP : no more than 25%
C ≤ 400mA
I
C ≤ 200mA
I
min typ max
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol UnitParameter Test conditions
V
(BR) CEO
V
CE (sat)
II
hFE
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
DC amplification factor
CEO = 100µA
I
V
V
V
V
I = 8V, IC = 400mA
I = 5V, IC = 200mA
I = 17V
CE = 4V, IC = 400mA, Ta = 25°C
Limits
0
0
—
—
40
400
V
mA
0
8
5
0
—
—
—
—
200
30
0.5
V
V
Limits
+
—
1.3
1.0
0.8
max
—
2.4
1.6
1.8
—
V
V
mA
—
min typ
40
—
—
0.3
1000
6000
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol UnitParameter Test conditions
ton
toff
NOTE 1 TEST CIRCUIT
Turn-on time
Turn-off time
INPUT
Measured device
PG
50Ω C
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
P
= 8V
V
(2) Input-output conditions : RL = 25Ω, VO = 10V
(3) Electrostatic capacity C
connections and input capacitance at probes
P-P
O
= 50Ω
L
includes floating capacitance at
CL = 15pF (note 1)
V
O
R
L
OUTPUT
L
TIMING DIAGRAM
INPUT
OUTPUT
Limits
min typ max
—
—
50% 50%
50% 50%
ton
40
400
toff
—
—
ns
ns
Aug. 1999
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