Mitsubishi M2V64S40BTP-8A, M2V64S40BTP-6, M2V64S20BTP-6, M2V64S30BTP-7, M2V64S30BTP-6 Datasheet

MITSUBISHI ELECTRIC

PC133 SDRAM (Rev.0.5)

64M bit Synchronous DRAM

FEATURES

ITEM

M2V64S20TP

Icc1

Icc6

Active to Precharge Command Period

(Min.)

Self Refresh Current

(Max.)

-6

7.5ns45ns

20.0ns

1mA

120mA

M2V64S30TP

M2V64S40TP

Oct. '99

MITSUBISHI LSIs

M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)

PRELIMINARY

Some of contents are described for general products and are
subject to change without notice.

DESCRIPTION

M2V64S20BTP is organized as 4-bank x4,194,304-word x 4-bit,and M2V64S30BTP is organized
as 4-bank x 2097152-word x 8-bit ,and M2V64S40BTP is organized as 4-bank x 1048576-word x 16-bit
Synchronous DRAM with LVTTL interface. All inputs and outputs are referenced to the rising edge of
CLK. M2V64S20BTP,M2V64S30BTP,M2V64S40BTP achieves very high speed data rates up to
133MHz, and is suitable for main memory or graphic memory in computer systems.

tCLK
tRAS

tRCD
tAC
tRC

Clock Cycle Time (Min.)

Row to Column Delay (Min.)
Access Time from CLK (Max.) (CL=3)

Ref/Active Command Period (Min.)

Operation Current (Max.) [Single Bank]

5.4ns

67.5ns

- Single 3.3V ±0.3V power supply

- Max. Clock frequency -6 : 133MHz [PC133<3-3-3> ]

- Fully synchronous operation referenced to clock rising edge

- 4-bank operation controlled by BA0,BA1(Bank Address)

- /CAS latency- 2/3 (programmable)

- Burst length- 1/2/4/8/FP (programmable)

- Burst type- Sequential and interleave burst (programmable)

- Random column access

- Auto precharge / All bank precharge controlled by A10

- Auto and self refresh

- 4096 refresh cycles /64ms

- LVTTL Interface

- Package 400-mil, 54-pin Thin Small Outline (TSOP II) with 0.8mm lead pitch

1

MITSUBISHI ELECTRIC

PC133 SDRAM (Rev.0.5)

64M bit Synchronous DRAM

CLK

: Master Clock

CKE

: Clock Enable

/CS

: Chip Select

/RAS

: Row Address Strobe

/CAS

: Column Address Strobe

/WE

: Write Enable

DQ0-3(x4), DQ0-7(x8), DQ0-15(x16)

: Data I/O

DQM (x4, x8) ,DQML/U (x16)

: Output Disable/ Write Mask

A0-11

: Address Input

BA0,1

: Bank Address

Vdd

: Power Supply

VddQ

: Power Supply for Output

Vss

: Ground

VssQ

: Ground for Output

Oct. '99

M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)

PIN CONFIGURATION (TOP VIEW)

MITSUBISHI LSIs

M2V64S20BTP
M2V64S30BTP

M2V64S40BTP

Vdd

NC

VddQ

NC

DQ0

VssQ

NC
NC

VddQ

NC

DQ1

VssQ

NC

Vdd

NC

/WE
/CAS
/RAS

/CS

BA0(A13)
BA1(A12)

A10

A0
A1
A2
A3

Vdd

Vdd

DQ0

VddQ

NC

DQ1

VssQ

NC

DQ2

VddQ

NC

DQ3

VssQ

NC

Vdd

NC

/WE
/CAS
/RAS

/CS

BA0(A13)
BA1(A12)

A10

A0
A1
A2
A3

Vdd

Vdd

DQ0

VddQ

DQ1
DQ2

VssQ

DQ3

DQ4

VddQ

DQ5
DQ6

VssQ

DQ7

Vdd

DQML

/WE
/CAS
/RAS

/CS

BA0(A13)
BA1(A12)

A10

Vdd

1
2

3
4
5
6

7
8

9
10
11
12
13
14
15
16
17
18
19

20
21
22

A0

24 31

A1 A6

25 30

A2

26 29

A3

27 28

54
53

52
51
50
49

48
47

46
45
44
43
42
41
40
39
38
37
36

35
34
33

Vss
DQ15

VssQ
DQ14

DQ13
VddQ
DQ12
DQ11
VssQ

DQ10
DQ9
VddQ

DQ8

Vss
NC

DQMU
CLK
CKE

NC
A11

A9
A8
A723 32

A5
A4
Vss

Vss
DQ7
VssQ
NC
DQ6
VddQ
NC

DQ5
VssQ
NC
DQ4
VddQ
NC
Vss

NC
DQM
CLK
CKE
NC

A11
A9
A8
A7
A6
A5
A4
Vss

Vss
NC
VssQ
NC

DQ3
VddQ
NC
NC

VssQ
NC
DQ2
VddQ
NC
Vss
NC
DQM
CLK
CKE
NC

A11
A9
A8

A7
A6

A5
A4
Vss

2

MITSUBISHI ELECTRIC

PC133 SDRAM (Rev.0.5)

64M bit Synchronous DRAM

BLOCK DIAGRAM

Address Buffer

Control Signal Buffer

CLK

CKE

Clock Buffer

Control Circuitry

DQ0-15 (x16)

Register

Synchronous DRAM

Oct. '99

MITSUBISHI LSIs

M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)

DQ0-3 (x4)
DQ0-7 (x8)

I/O Buffer

Memory Array

Memory Array

Bank #0

Mode

A0-11 BA0,1

Type Designation Code

This rule is applied only to Synchronous DRAM families beyond 64M B-version.

Bank #1

Memory Array

Memory Array

Bank #2

/CS /RAS /CAS /WE DQM

Bank #3

M2 V 64 S 2 0 B TP - 7

Access Item
Package Type TP: TSOP(II)
Process Generation
Function 0: Random Column

Organization 2n 2: x4, 3: x8, 4: x16

Density 64:64M bits
Interface S: SSTL, V:LVTTL
Mitsubishi Semiconductor Memory

3

MITSUBISHI ELECTRIC

PC133 SDRAM (Rev.0.5)

64M bit Synchronous DRAM

PIN FUNCTION

Oct. '99

CLK Input Master Clock: All other inputs are referenced to the rising edge of CLK.

CKE Input

/CS Input Chip Select: When /CS is high, any command means No Operation.

/RAS, /CAS, /WE Input Combination of /RAS, /CAS, /WE defines basic commands.

A0-11 Input

M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)

Clock Enable: CKE controls internal clock. When CKE is low, internal clock

for the following cycle is ceased. CKE is also used to select auto / self

refresh. After self refresh mode is started, CKE becomes asynchronous

input. Self refresh is maintained as long as CKE is low.

A0-11 specify the Row / Column Address in conjunction with BA0,1. The
Row Address is specified by A0-11. The Column Address is specified by
A0-A9(x4), A0-A8(x8), A0-7(x16) . A10 is also used to indicate precharge
option. When A10 is high at a read / write command, an auto precharge
is performed. When A10 is high at a precharge command, all banks are
precharged.

MITSUBISHI LSIs

BA0,1 Input

DQ0-3(x4),
DQ0-7(x8),
DQ0-15(x16)

DQM(x4,x8),
DQMU/L(x16)

Vdd, Vss Power Supply Power Supply for the memory array and peripheral circuitry.

VddQ, VssQ Power Supply VddQ and VssQ are supplied to the Output Buffers only.

Input / Output Data In and Data out are referenced to the rising edge of CLK.

Input

Bank Address: BA0,1 specifies one of four banks to which a command is
applied. BA0,1 must be set with ACT, PRE, READ, WRITE commands.

Din Mask / Output Disable: When DQMU/L is high in burst write, Din for the

current cycle is masked. When DQMU/L is high in burst read,
Dout is disabled at the next but one cycle.

4

MITSUBISHI ELECTRIC

PC133 SDRAM (Rev.0.5)

64M bit Synchronous DRAM

BASIC FUNCTIONS

Oct. '99

M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)

MITSUBISHI LSIs

The M2V64S20(30,40)BTP provides basic functions, bank (row) activate, burst read / write,
bank (row) precharge, and auto / self refresh.
Each command is defined by control signals of /RAS, /CAS and /WE at CLK rising edge. In
addition to 3 signals, /CS ,CKE and A10 are used as chip select, refresh option, and
precharge option, respectively. To know the detailed definition of commands, please see the
command truth table.

CLK
/CS
/RAS
/CAS
/WE

CKE
A10

Chip Select : L=select, H=deselect
Command
Command
Command
Refresh Option @refresh command
Precharge Option @precharge or read/write command

define basic commands

Activate (ACT) [/RAS =L, /CAS =/WE =H]

ACT command activates a row in an idle bank indicated by BA.

Read (READ) [/RAS =H, /CAS =L, /WE =H]

READ command starts burst read from the active bank indicated by BA. First output data
appears after /CAS latency. When A10 =H at this command, the bank is deactivated after the
burst read (auto-precharge,READA).

Write (WRITE) [/RAS =H, /CAS =/WE =L]

WRITE command starts burst write to the active bank indicated by BA. Total data length to be
written is set by burst length. When A10 =H at this command, the bank is deactivated after the
burst write (auto-precharge, WRITEA).

Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]

PRE command deactivates the active bank indicated by BA. This command also terminates
burst read /write operation. When A10 =H at this command, both banks are deactivated
(precharge all, PREA).

Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE =H]

REFA command starts auto-refresh cycle. Refresh address including bank address are
generated inter-nally. After this command, the banks are precharged automatically.

5

MITSUBISHI ELECTRIC

PC133 SDRAM (Rev.0.5)

64M bit Synchronous DRAM

COMMAND TRUTH TABLE

Oct. '99

MITSUBISHI LSIs

M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)

COMMAND MNEMONIC

Deselect DESEL H X H X X X X X X X

No Operation NOP H X L H H H X X X X

Row Address Entry &

Bank Activate

Single Bank Precharge PRE H X L L H L V X L X

Precharge All Banks PREA H X L L H L X H X

Column Address Entry

& Write

Column Address Entry

& Write with Auto-

Precharge

Column Address Entry

& Read

Column Address Entry

& Read with Auto-

Precharge

ACT H X L L H H V V V V

WRITE H X L H L L V X L V

WRITEA H X L H L L V X H V

READ H X L H L H V X L V

READA H X L H L H V X H V

CKE

n-1

CKE

n

/CS /RAS /CAS /WE BA0,1 A11 A10 A0-9

X

Auto-Refresh REFA H H L L L H X X X X

Self-Refresh Entry REFS H L L L L H X X X X

Self-Refresh Exit REFSX

Burst Terminate TBST H X L H H L
Mode Register Set MRS H X L L L L L L L V*1

H=High Level, L=Low Level, V=Valid, X=Don't Care, n=CLK cycle number

NOTE:

1. A7-A9 =0, A0-A6 =Mode Address

L H H X X X X X X X
L H L H H H X X X X

X X X X

6

MITSUBISHI ELECTRIC

PC133 SDRAM (Rev.0.5)

64M bit Synchronous DRAM

FUNCTION TRUTH TABLE

Oct. '99

Current State /CS /RAS /CAS /WE Address Command Action

IDLE H X X X X DESEL NOP

L H H H X NOP NOP
L H H L BA TBST ILLEGAL*2

L H L X BA, CA, A10 READ / WRITE ILLEGAL*2
L L H H BA, RA ACT Bank Active, Latch RA
L L H L BA, A10 PRE / PREA NOP*4
L L L H X REFA Auto-Refresh*5

M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)

MITSUBISHI LSIs

L L L L

ROW ACTIVE H X X X X DESEL NOP

L H H H X NOP NOP
L H H L BA TBST NOP

L H L H BA, CA, A10 READ / READA

L H L L BA, CA, A10

L L H H BA, RA ACT Bank Active / ILLEGAL*2
L L H L BA, A10 PRE / PREA Precharge / Precharge All
L L L H X REFA ILLEGAL

L L L L

READ H X X X X DESEL NOP (Continue Burst to END)

L H H H X NOP NOP (Continue Burst to END)
L H H L BA TBST Terminate Burst

Op-Code,
Mode-Add

Op-Code,
Mode-Add

MRS Mode Register Set*5

Begin Read, Latch CA,
Determine Auto-Precharge

WRITE /

WRITEA

MRS ILLEGAL

Begin Write, Latch CA,
Determine Auto-Precharge

L H L H BA, CA, A10 READ / READA

L H L L BA, CA, A10

L L H H BA, RA ACT Bank Active / ILLEGAL*2
L L H L BA, A10 PRE / PREA Terminate Burst, Precharge
L L L H X REFA ILLEGAL

L L L L

Op-Code,
Mode-Add

Terminate Burst, Latch CA,
Begin New Read, Determine
Auto-Precharge*3

WRITE /

WRITEA

MRS ILLEGAL

Terminate Burst, Latch CA,
Begin Write, Determine Auto­Precharge*3

7

MITSUBISHI ELECTRIC

PC133 SDRAM (Rev.0.5)

64M bit Synchronous DRAM

FUNCTION TRUTH TABLE

(continued)

Oct. '99

Current State /CS /RAS /CAS /WE Address Command Action

WRITE H X X X X DESEL NOP (Continue Burst to END)

L H H H X NOP NOP (Continue Burst to END)
L H H L BA TBST Terminate Burst

L H L H BA, CA, A10 READ / READA

M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)

Terminate Burst, Latch CA,
Begin Read, Determine Auto­Precharge*3

MITSUBISHI LSIs

READ with

AUTO

PRECHARGE

L H L L BA, CA, A10

L L H H BA, RA ACT Bank Active / ILLEGAL*2
L L H L BA, A10 PRE / PREA Terminate Burst, Precharge

L L L H X REFA ILLEGAL

L L L L

H X X X X DESEL NOP (Continue Burst to END)

L H H H X NOP NOP (Continue Burst to END)
L H H L BA TBST ILLEGAL
L H L H BA, CA, A10 READ / READA ILLEGAL

L H L L BA, CA, A10

L L H H BA, RA ACT Bank Active / ILLEGAL*2
L L H L BA, A10 PRE / PREA ILLEGAL*2
L L L H X REFA ILLEGAL

L L L L

Op-Code,
Mode-Add

Op-Code,
Mode-Add

WRITE /

WRITEA

MRS ILLEGAL

WRITE /

WRITEA

MRS ILLEGAL

Terminate Burst, Latch CA,
Begin Write, Determine Auto­Precharge*3

ILLEGAL

WRITE with

AUTO

PRECHARGE

H X X X X DESEL NOP (Continue Burst to END)

L H H H X NOP NOP (Continue Burst to END)
L H H L BA TBST ILLEGAL
L H L H BA, CA, A10 READ / READA ILLEGAL

L H L L BA, CA, A10

L L H H BA, RA ACT Bank Active / ILLEGAL*2
L L H L BA, A10 PRE / PREA ILLEGAL*2
L L L H X REFA ILLEGAL

L L L L

Op-Code,
Mode-Add

WRITE /

WRITEA

MRS ILLEGAL

ILLEGAL

8

MITSUBISHI ELECTRIC

PC133 SDRAM (Rev.0.5)

64M bit Synchronous DRAM

FUNCTION TRUTH TABLE

(continued)

Oct. '99

Current State /CS /RAS /CAS /WE Address Command Action

M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)

MITSUBISHI LSIs

PRE -

CHARGING

ROW

ACTIVATING

H X X X X DESEL NOP (Idle after tRP)
L H H H X NOP NOP (Idle after tRP)
L H H L BA TBST ILLEGAL*2
L H L X BA, CA, A10 READ / WRITE ILLEGAL*2
L L H H BA, RA ACT ILLEGAL*2
L L H L BA, A10 PRE / PREA NOP*4 (Idle after tRP)
L L L H X REFA ILLEGAL

L L L L

H X X X X DESEL NOP (Row Active after tRCD)
L H H H X NOP NOP (Row Active after tRCD)
L H H L BA TBST ILLEGAL*2
L H L X BA, CA, A10 READ / WRITE ILLEGAL*2
L L H H BA, RA ACT ILLEGAL*2
L L H L BA, A10 PRE / PREA ILLEGAL*2
L L L H X REFA ILLEGAL

L L L L

Op-Code,
Mode-Add

Op-Code,
Mode-Add

MRS ILLEGAL

MRS ILLEGAL

WRITE RE­COVERING

H X X X X DESEL NOP
L H H H X NOP NOP

L H H L BA TBST ILLEGAL*2
L H L X BA, CA, A10 READ / WRITE ILLEGAL*2
L L H H BA, RA ACT ILLEGAL*2
L L H L BA, A10 PRE / PREA ILLEGAL*2
L L L H X REFA ILLEGAL

L L L L

Op-Code,
Mode-Add

MRS ILLEGAL

9

MITSUBISHI ELECTRIC

PC133 SDRAM (Rev.0.5)

64M bit Synchronous DRAM

FUNCTION TRUTH TABLE

(continued)

Oct. '99

Current State /CS /RAS /CAS /WE Address Command Action

M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)

MITSUBISHI LSIs

RE-

FRESHING

MODE

REGISTER

SETTING

H X X X X DESEL NOP (Idle after tRC)
L H H H X NOP NOP (Idle after tRC)
L H H L BA TBST ILLEGAL
L H L X BA, CA, A10 READ / WRITE ILLEGAL
L L H H BA, RA ACT ILLEGAL
L L H L BA, A10 PRE / PREA ILLEGAL
L L L H X REFA ILLEGAL

L L L L

H X X X X DESEL NOP (Idle after tRSC)
L H H H X NOP NOP (Idle after tRSC)
L H H L BA TBST ILLEGAL
L H L X BA, CA, A10 READ / WRITE ILLEGAL
L L H H BA, RA ACT ILLEGAL
L L H L BA, A10 PRE / PREA ILLEGAL
L L L H X REFA ILLEGAL

L L L L

Op-Code,
Mode-Add

Op-Code,
Mode-Add

MRS ILLEGAL

MRS ILLEGAL

ABBREVIATIONS:
H=High Level, L=Low Level, X=Don't Care
BA=Bank Address, RA=Row Address, CA=Column Address, NOP=No OPeration

NOTES:

1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle.

2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the
state of that bank.

3. Must satisfy bus contention, bus turn around, write recovery requirements.

4. NOP to bank precharging or in idle state. May precharge bank indicated by BA.

5. ILLEGAL if any bank is not idle.

ILLEGAL = Device operation and/or data-integrity are not guaranteed.

10

MITSUBISHI ELECTRIC

PC133 SDRAM (Rev.0.5)

64M bit Synchronous DRAM

FUNCTION TRUTH TABLE for CKE

Oct. '99

MITSUBISHI LSIs

M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)

Current State

SELF-

REFRESH*1

POWER

DOWN

ALL BANKS

IDLE*2

CKE

CKE

n-1

H X X X X X X INVALID

L H H X X X X Exit Self-Refresh (Idle after tRC)
L H L H H H X Exit Self-Refresh (Idle after tRC)
L H L H H L X ILLEGAL
L H L H L X X ILLEGAL
L H L L X X X ILLEGAL
L L X X X X X NOP (Maintain Self-Refresh)

H X X X X X X INVALID

L H X X X X X Exit Power Down to Idle

L L X X X X X NOP (Maintain Self-Refresh)
H H X X X X X Refer to Function Truth Table
H L L L L H X Enter Self-Refresh
H L H X X X X Enter Power Down
H L L H H H X Enter Power Down
H L L H H L X ILLEGAL

/CS /RAS /CAS /WE Add Action

n

H L L H L X X ILLEGAL
H L L L X X X ILLEGAL

L X X X X X X Refer to Current State =Power Down

ANY STATE

other than

listed above

ABBREVIATIONS:
H=High Level, L=Low Level, X=Don't Care

NOTES:

1. CKE Low to High transition will re-enable CLK and other inputs asynchronously. A minimum setup
time must be satisfied before any command other than EXIT.

2. Power-Down and Self-Refresh can be entered only from the All Banks Idle State.

3. Must be legal command.

H H X X X X X Refer to Function Truth Table
H L X X X X X Begin CLK Suspend at Next Cycle*3

L H X X X X X Exit CLK Suspend at Next Cycle*3

L L X X X X X Maintain CLK Suspend

11

MITSUBISHI ELECTRIC

PC133 SDRAM (Rev.0.5)

64M bit Synchronous DRAM

SIMPLIFIED STATE DIAGRAM

Oct. '99

MITSUBISHI LSIs

M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)

SELF

REFRESH

REFS

REFSX

WRITE

SUSPEND

MODE

REGISTER

SET

CLK

SUSPEND

CKEH

TBST (for Full Page)

WRITE READ

CKEL

WRITE

CKEH

MRS

IDLE

CKEL

ROW

ACTIVE

WRITEA

WRITE

ACT

READA

READ

REFA

CKEL

CKEH

TBST (for Full Page)

READ

AUTO

REFRESH

POWER

DOWN

CKEL

CKEH

READ

SUSPEND

WRITEA

WRITEA

SUSPEND

POWER
APPLIED

CKEL

CKEH

POWER

ON

WRITEA

PRE

WRITEA

PRE

PRE PRE

PRE

CHARGE

12

READA

READA

READA

CKEL

CKEH

READA

SUSPEND

Automatic Sequence
Command Sequence

MITSUBISHI ELECTRIC

PC133 SDRAM (Rev.0.5)

64M bit Synchronous DRAM

POWER ON SEQUENCE

MODE REGISTER

Oct. '99

M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)

MITSUBISHI LSIs

Before starting normal operation, the following power on sequence is necessary to prevent a
SDRAM from damaged or malfunctioning.

1.Clock will be applied at power up along with power. Attempt to maintain CKE high,
DQM (x4,x8), DQMU/L (x16) high and NOP condition at the inputs along with power.

2. Maintain stable power, stable clock, and NOP input conditions for a minimum of 200us.

3. Issue precharge commands for all banks. (PRE or PREA)

4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands.

5. Issue a mode register set command to initialize the mode register.
After these sequence, the SDRAM is idle state and ready for normal operation.

Burst Length, Burst Type and /CAS Latency can be
programmed by setting the mode register (MRS). The mode
register stores these data until the next MRS command, which
may be issued when both banks are in idle state. After tRSC
from a MRS command, the SDRAM is ready for new command.

A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0BA1BA0

WM

0 0

/CAS LATENCY

R
R

2

3
R
R
R
R

LTMODE BT BL

BURST

LENGTH

LATENCY

MODE

00

CL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1

0 0

CLK
/CS
/RAS
/CAS
/WE

BA0,1 A11-A0

BL

0 0 0
0 0 1
0 1 0
0 1 1
1 0 0

1 0 1
1 1 0
1 1 1

BT= 0 BT= 1

1
2
4
8
R

R
R

FP

V

1
2
4
8
R

R
R
R

WRITE

MODE

0
1

BURST
SINGLE BIT

13

BURST

TYPE

0

SEQUENTIAL

1

R: Reserved for Future Use
FP: Full Page

INTERLEAVE

MITSUBISHI ELECTRIC

PC133 SDRAM (Rev.0.5)

64M bit Synchronous DRAM

/CAS latency, CL, is used to synchronize the first output data with the CLK frequency, i.e., the

READ

READ

Oct. '99

M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)

MITSUBISHI LSIs

M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)

[ /CAS LATENCY ]

speed of CLK determines which CL should be used. First output data is available after CL
cycles from READ command.

/CAS Latency Timing(BL=4)

CLK

Command

Address

DQ Q0 Q1 Q2 Q3

DQ Q0 Q1 Q2 Q3

ACT

X

tRCD

Y

CL=2

CL=2

CL=3

CL=3

[ BURST LENGTH ]

The burst length, BL, determines the number of consecutive writes or reads that will be
automatically performed after the initial write or read command. For BL=1,2,4,8, full page the
output data is tristated (Hi-Z) after the last read. For BL=FP (Full Page), the TBST (Burst
Terminate) command should be issued to stop the output of data.

Burst Length Timing( CL=2 )

tRCD

CLK

Command

Address

DQ Q0
DQ Q0 Q1
DQ Q0 Q1 Q2 Q3
DQ Q0 Q1 Q2 Q3

DQ Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 Q8 Qm Q0 Q1

ACT

X Y

Q4 Q5 Q6 Q7

M2V64S20B : m=1023
M2V64S30B : m=511
M2V64S40B : m=255

BL=1
BL=2

BL=4
BL=8
BL=FP

Full Page counter rolls over
and continues to count.

14

MITSUBISHI ELECTRIC

PC133 SDRAM (Rev.0.5)

64M bit Synchronous DRAM

Oct. '99

CLK

MITSUBISHI LSIs

M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)

Command

Address

DQ

Initial Address

A2 A1 A0

0 0 0
0 0 1
0 1 0
0 1 1
1 0 0

CL= 3
BL= 4

BL

8

Read

Y

Q0 Q1 Q2 Q3

/CAS Latency Burst Length Burst Length

Burst Type

Column Addressing

Sequential Interleaved
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
1 2 3 4 5 6 7 0 1 0 3 2 5 4 7 6
2 3 4 5 6 7 0 1 2 3 0 1 6 7 4 5
3 4 5 6 7 0 1 2 3 2 1 0 7 6 5 4
4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3

Write

Y

D0 D1 D2 D3

1 0 1
1 1 0
1 1 1

- 0 0

- 0 1

- 1 0

- 1 1

- - 0

- - 1

5 6 7 0 1 2 3 4 5 4 7 6 1 0 3 2
6 7 0 1 2 3 4 5 6 7 4 5 2 3 0 1
7 0 1 2
0 1 2 3
1 2 3 0

4

2 3 0 1
3 0
0 1

2

1 0

3 4 5 6 3 2 1 0

1 2

7 6 5 4
0 1 2 3
1 0 3 2

2 3 0 1
3 2
0 1
1 0

1 0

15

MITSUBISHI ELECTRIC

PC133 SDRAM (Rev.0.5)

64M bit Synchronous DRAM

OPERATIONAL DESCRIPTION

Oct. '99

M2V64S20BTP-6 (4-BANK x 4194304-WORD x 4-BIT)
M2V64S30BTP-6 (4-BANK x 2097152-WORD x 8-BIT)
M2V64S40BTP-6 (4-BANK x 1048576-WORD x 16-BIT)

MITSUBISHI LSIs

BANK ACTIVATE

The SDRAM has four independent banks. Each bank is activated by the ACT command with
the bank addresses (BA0,1). A row is indicated by the row addresses A11-0. The minimum
activation interval between one bank and the other bank is tRRD.The number of banks which
are active concurrently is not limited.

PRECHARGE

The PRE command deactivates the bank indicated by BA0,1. When multiple banks are active,
the precharge all command (PREA, PRE + A10=H) is available to deactivate them at the same
time. After tRP from the precharge, an ACT command to the same bank can be issued.

Bank Activation and Precharge All (BL=4, CL=3)

CLK

tRCmin

Command

A0-9

A10

A11 Xa Xb Xb

BA0,1

DQ

ACT

Xa

Xa

00

tRRD

tRCD

ACT

Xb

Xb

01

READ

Y

0

00

PRE

tRAS tRP

1

Qa0 Qa1 Qa2 Qa3

Precharge all

ACT

Xb

Xb

01

READ

After tRCD from the bank activation, a READ command can be issued. 1st output data is
available after the /CAS Latency from the READ, followed by (BL -1) consecutive data when the
Burst Length is BL. The start address is specified by A9-0(x4), A8-0(x8), A7-0(X16), and the
address sequence of burst data is defined by the Burst Type. A READ command may be
applied to any active bank, so the row precharge time (tRP) can be hidden behind continuous
output data by interleaving the multiple banks. When A10 is high at a READ command, the auto­precharge (READA) is performed. Any command (READ, WRITE, PRE, ACT) to the same bank
is inhibited till the internal precharge is complete. The internal precharge starts at BL after
READA. The next ACT command can be issued after (BL + tRP) from the previous READA.

16