Mitsubishi Electric Corporation Semiconductor Group FU-68SDF-V810M209B, FU-68SDF-V810M208B, FU-68SDF-V810M207B, FU-68SDF-V810M206B, FU-68SDF-V810M205B Datasheet

MITSUBISHI (OPTICAL DEVICES)

TENTATIVE FU-68SDF-V810Mxxx B

1.58 µm (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL

(WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)

DESCRIPTION

Module type FU-68SDF-V810MxxB is a 1.58µm
(L-Band) DFB-LD module with single-mode optical
fiber.
This module is suitable to a directly modulated light
source for use in 2.5Gb/s digital optical
communication systems.
This module is prepared to expand the wavelength
channels into L-Band for Dense-WDM transmission.

FEATURES

l Multi quantum wells (MQW) DFB Laser Diode

module

l Input impedance is 25Ω
l Emission wavelength is in 1.58µm band
l High-speed response
l Built-in optical isolator
l Built-in thermal electric cooler
l Butterfly package
l With photodiode for optical output monitor

APPLICATION

High speed transmission systems (~2.5Gb/s)
Dense-WDM systems

OPTION

l Wavelength option:
1565nm~1625nm are available

ABSOLUTE MAXIMUM RATINGS (Tld=Tset)

Parameter Symbol Conditions Rating Unit

Laser diode

electric cooler
(Note)
Operating case temperature Tc - -20 ~ 70

Storage temperature Tstg - -40 ~ 85

Note) Even if the thermo-electric cooler (TEC) is operated within the rated conditions, uncontrolled current

loading or operation without heatsink may easily damage the module by exceeding the storage
temperature range. Thermistor resistance should be properly monitored by the feedback circuit during TEC
operation to avoid the catastrophic damage.

Optical output
power
Forward current If CW 150 mA
Reverse voltage Vrl - 2 V
Reverse voltage Vrd - 20 VPhotodiode
Forward current Ifd - 2 mA
Cooler current Ipe - 1.3 AThermo­Cooler voltage Vpe - 3.1 V

Pf CW 15 mW

°C
°C

MITSUBISHI (OPTICAL DEVICES)

TENTATIVE FU-68SDF-V810Mxxx B

1.58 µm (L-Band) DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL

(WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)

ELECTRICAL/OPTICAL CHARACTERISTICS (Tld=Tset, Tc=25°C unless otherwise noted)

Parameter Symbol Test Conditions Limits Unit

Min. Typ. Max.

Threshold current Ith CW - 10 25 mA
Optical output power
at threshold current
Operating current Iop CW, Pf=10mW - 50 95 mA
Operating voltage Vop CW, Pf=10mW - 1.3 1.8 V
Input impedance Zin Pf=10mW - 25 ­Light-emission central
wavelength
Central wavelength drift with
case temp.
Laser operating temperature Tset - 20 - 35 °C
Spectral width
Side mode suppression ratio Sr (Note 1) 33 40 - dB
Dispersion penalty Pp (Note 1), at 10

Cutoff frequency
(-1.5dB optical)
Rise and fall time
(10~90%)
Relative intensity noise Nr CW, Pf=10mW,

Tracking error
(Note 3)

Differential efficiency
Linearity
Monitor current Imon CW, Pf=10mW, Vrd=5V 0.2 - 3 mA

Dark current (PD) Id
Capacitance (PD) Ct Vrd=5V, f=1MHz - - 10 pF

Note 1) 2.48832Gb/s NRZ, 223-1, Pf_ave=5mW, Extinction ratio 10dB, optical return loss of the connectors

should be greater than 40dB in order to ensure the specified performance.
Note 2) See Table 1.
Note 3) Er=max|10×log(Pf / Pf@25°C)|
Note 4) Variation of the differential efficiency from the straight line between 1mW and 10mW.

Pth CW, If=Ith - - 150

λc

∆λc/∆Tc Tc=-20~70°C

∆λ

fc Pf=10mW 3.5 - - GHz

tr, tf (Note 1) - - 150 psec

Er

η

∆η

(Note 1) (Note 2) nm

-1 - 0

(Note 1), -20dB - 0.2 0.4 nm

-10

BER,

+1800ps/nm

0.5~3GHz
Tc=-20~70°C,

APC, ATC
CW, Pf=10mW 0.15 0.25 0.35 mW/

CW, Pf=1~12mW,
(Note 4)

Tc=25°C 35 - -Optical isolation Iso
Tc=-20~70°C
Vrd=5V, Tc=-20~70°C

- - 2 dB

- -155 -145 dB/Hz

- - 0.5 dB

-20 - 20 %

23 - -

- - 0.1

pm/°C

µW

Ω

mA

dB

µA