Mitsubishi Electric Corporation Semiconductor Group FU-68SDF-810M9B, FU-68SDF-810M95B, FU-68SDF-810M93B, FU-68SDF-810M91B, FU-68SDF-810M89B Datasheet
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MITSUBISHI (OPTICAL DEVICES)
FU-68SDF-V810MxxB
1.55 mm DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL
(WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)
DESCRIPTION
Module t ype FU-68SDF-V810MxxB is a 1.55mm DF B LD module with single-mode optical fiber.
This module is suitable to a directly modulated light
source for use in 2.5Gb/s digital optical
communication systems.
This module is prepared in accordance with ITU-T
recommendation wavelength channel plan for D enseWDM transmission.
FEATURES
Multi quantum wells (MQW) DFB Laser Diode
module
Input impedance is 25W
Emission wavelength is in 1.55mm band
High-speed response
Built-in optical isolator
Built-in thermal electric cooler
Butterfly package
With photodiode for optical output monitor
APPLICATION
High speed transmission systems (~2.5Gb/s)
Dense-WDM systems
ABSOLUTE MAXIMUM RATINGS (Tld=Tset)
Parameter Symbol Conditions Rating Unit
Optical output
power
Pf CW 15 mW
Forward current If CW 150 mA
Laser diode
Reverse voltage Vrl
2V
Reverse voltage Vrd 20 VPhotodiode
Forward current Ifd
2mA
Cooler current Ipe 1.3 AThermo-
electric cooler
(Note)
Cooler voltage Vpe
3.1 V
Operating case temperature Tc -20 ~ 70
°C
Storage temperature Tstg -40 ~ 85
°C
Note) E ven if the thermo-electric cooler (TEC) is operated within the rated conditions, uncontrolled current loading
or o peration without heatsink may easily damage the module by exceeding the storage temperature range.
Thermistor resistance sho uld be properly monitored by t he f eedback c ircuit during TEC operat ion t o av oid
the catastrophic damage.
MITSUBISHI (OPTICAL DEVICES)
FU-68SDF-V810MxxB
1.55 mm DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL
(WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)
ELECTRICAL/OPTICAL CHARACTERISTICS (Tld=Tset, Tc=25°C unless otherwise noted)
Parameter Symbol Test Conditions Limits Unit
Min. Typ. Max.
Threshold current Ith CW - 10 25 mA
Optical output power
at threshold current
Pth CW, If=Ith - - 150
mW
Operating current Iop CW, Pf=10mW - 50 95 mA
Operating voltage Vop CW, Pf=10mW - 1.3 1.8 V
Input impedance Zin Pf=10mW - 25 -
W
Light-emission central
wavelength
lc
(Note 1) (Note 2) nm
Central wavelength drift with
case temp.
Dlc/DTc Tc=-20~70°C
-1 - 0
pm/°C
Laser operating temperature Tset - 20 - 35 °C
Spectral width
Dl
(Note 1), -20dB - 0.2 0.4 nm
Side mode suppression ratio Sr (Note 1) 33 40 - dB
Dispersion penalty Pp (Note 1), at 10
-10
BER,
+1800ps/nm
--2dB
Cutoff frequency
(-1.5dB optical)
fc Pf=10mW 3.5 - - GHz
Rise and fall time
(10~90%)
tr, tf (Note 1) - - 150 psec
Relative intensity noise Nr CW, Pf=10mW,
0.5~3GHz
- -155 -145 dB/Hz
Tracking error
(Note 3)
Er
Tc=-20~70°C,
APC, ATC
- - 0.5 dB
Differential efficiency
h
CW, Pf=10mW 0.15 0.25 0.35 mW/
mA
Linearity
Dh
CW, Pf=1~12mW,
(Note 4)
-20 - 20 %
Monitor current Imon CW, Pf=10mW, Vrd=5V 0.2 - 3 mA
Tc=25°C35--Optical isolation Iso
Tc=-20~70°C
23 - -
dB
Dark current (PD) Id
Vrd=5V, Tc=-20~70°C
- - 0.1
mA
Capacitance (PD) Ct Vrd=5V, f=1MHz - - 10 pF
Note 1) 2.48832Gb/s NRZ, 223-1, Pf_ave=5mW, Extinction ratio 10dB, optical return loss of the connectors should
be greater than 40dB in order to ensure the specified performance.
Note 2) See Table 1.
Note 3) Er=max|10´log(Pf / Pf@25°C)|
Note 4) Variation of the differential efficiency from the straight line between 1mW and 10mW.
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