Mitsubishi Electric Corporation Semiconductor Group FU-68SDF-802M93B, FU-68SDF-802M91B, FU-68SDF-802M89B, FU-68SDF-802M87B, FU-68SDF-802M85B Datasheet

FU-68SDF-V802MxxB

1.55 mm DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL

(WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)

DESCRIPTION

Module t ype FU-68SDF-V802MxxB is a 1.55mm DF B ­LD module with single-mode optical fiber.
This module is suitable to a directly modulated light
source for use in 2.5Gb/s digital optical
communication systems.
This module is prepared in accordance with ITU-T
recommendation wavelength channel plan for D ense­WDM transmission.

FEATURES

Multi quantum wells (MQW) DFB Laser Diode
module

Input impedance is 25W
Emission wavelength is in 1.55mm band

High-speed response
Built-in optical isolator
Built-in thermal electric cooler
Butterfly package
With photodiode for optical output monitor

MITSUBISHI (OPTICAL DEVICES)

APPLICATION

High speed transmission systems (~2.5Gb/s)
Dense-WDM systems

ABSOLUTE MAXIMUM RATINGS (Tld=Tset)

Parameter Symbol Conditions Rating Unit

Laser diode

electric cooler
(Note)

Operating case temperature Tc -20 ~ 70
Storage temperature Tstg -40 ~ 85

Note) Even if the thermo-electric cooler (TEC) is operated within the rated conditions, uncontrolled current loading

or operation without heatsink may easily damage the module by exceeding the storage temperature range.
Thermistor resistance should be properly monitored by the feedback circuit during TEC operation to avoid
the catastrophic damage.

Optical output
power

Forward current If CW 150 mA
Reverse voltage Vrl
Reverse voltage Vrd 20 VPhotodiode
Forward current Ifd
Cooler current Ipe 1.3 AThermo­Cooler voltage Vpe

Pf CW 6 mW

2V

2mA

3.1 V

°C
°C

MITSUBISHI (OPTICAL DEVICES)

FU-68SDF-V802MxxB

1.55 mm DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL

(WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)

ELECTRICAL/OPTICAL CHARACTERISTICS (Tld=Tset, Tc=25°C unless otherwise noted)

Parameter Symbol Test Conditions Limits Unit

Min. Typ. Max.
Threshold current Ith CW - 10 25 mA
Optical output power

at threshold current
Operating current Iop CW, Pf=2mW - 40 65 mA
Operating voltage Vop CW, Pf=2mW - 1.3 1.8 V
Input impedance Zin Pf=2mW - 25 -

Light-emission central
wavelength

Central wavelength drift with
case temp.

Laser operating temperature Tset - 20 - 35 °C
Spectral width

Side mode suppression ratio Sr (Note 1) 33 40 - dB
Dispersion penalty Pp (Note 1), at 10

Cutoff frequency
(-1.5dB optical)

Rise and fall time
(10~90%)

Relative intensity noise Nr CW, Pf=2mW,

Tracking error
(Note 3)

Differential efficiency

Linearity

Monitor current Imon CW, Pf=2mW, Vrd=5V 0.1 - 2 mA

Dark current (PD) Id
Capacitance (PD) Ct Vrd=5V, f=1MHz - - 10 pF

Note 1) 2.48832Gb/s NRZ, 223-1, Pf_ave=1mW, Extinction ratio 10dB, optical return loss of the connectors should

be greater than 40dB in order to ensure the specified performance.

Note 2) See Table 1.
Note 3) Er=max|10´log(Pf / Pf@25°C)|
Note 4) Variation of the differential efficiency from the straight line between 0.2mW and 2mW.

Pth CW, If=Ith - - 100

lc

Dlc/DTc Tc=-20~70°C

Dl

fc Pf=2mW 3.5 - - GHz

tr, tf (Note 1) - - 150 psec

Er

h

Dh

(Note 1) (Note 2) nm

-1 - 0

(Note 1), -20dB - 0.2 0.4 nm

-10

BER,

+1800ps/nm

0.5~3GHz
Tc=-20~70°C,

APC, ATC
CW, Pf=2mW 0.057 0.07 0.15 mW/

CW, Pf=0.2~2.4mW,
(Note 4)

Tc=25°C35--Optical isolation Iso
Tc=-20~70°C

Vrd=5V, Tc=-20~70°C

--2dB

- -155 -145 dB/Hz

- - 0.5 dB

-20 - 20 %

23 - -

- - 0.1

mW

W

pm/°C

mA

dB

mA