Mitsubishi Electric Corporation Semiconductor Group FS5VSH-3 Datasheet
MITSUBISHI Nch POWER MOSFET
FS5VSH-3
HIGH-SPEED SWITCHING USE
FS5VSH-3
¡2.5V DRIVE
¡V
DSS ............................................................................... 150V
DS (ON) (MAX) ............................................................. 0.35Ω
¡r
D ...........................................................................................5A
¡I
¡Integrated Fast Recovery Diode (TYP.)
............ 85ns
OUTLINE DRAWING Dimensions in mm
+0.3
–0.5
3.0
q
10.5MAX.
1
qwe
5
wr
e
0.8
1.5MAX.
8.6 ± 0.3
1.5MAX.
2.6 ± 0.4
q GATE
w DRAIN
e SOURCE
r DRAIN
r
4.5
9.8 ± 0.5
B
4.5
0.5
1.3
+0.3
0
–0
TO-220S
(1.5)
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
Typical value
150
±10
5
20
5
5
20
30
–55 ~ +150
–55 ~ +150
1.2
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±10V , VDS = 0V
V
DS = 150V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 2A, VGS = 4V
I
D = 2A, VGS = 2.5V
I
D = 2A, VGS = 4V
I
D = 2A, VDS = 5V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 80V, ID = 2A, VGS = 4V, RGEN = RGS = 50Ω
V
S = 2A, VGS = 0V
I
Channel to case
S = 5A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS5VSH-3
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
150
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.9
0.27
0.28
0.54
12
1200
100
35
19
34
100
60
1.0
—
85
—
±0.1
0.1
1.2
0.35
0.37
0.70
—
—
—
—
—
—
—
—
1.5
4.17
—
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
(W)
40
D
30
20
10
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
10
8
(A)
D
6
(TYPICAL)
VGS = 5V
4V2V2.5V
C
(°C)
PD = 30W
MAXIMUM SAFE OPERATING AREA
3
2
1
10
7
(A)
5
D
3
2
0
10
7
5
3
2
DRAIN CURRENT I
–1
10
7
TC = 25°C
5
Single Pulse
3
1
10
357 2 10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 5V
(A)
D
5.0
4.0
3.0
tw = 10ms
100ms
1ms
10ms
DC
2
4V2V2.5V
3
3572 2
DS
(V)
1.5V
4
2
DRAIN CURRENT I
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
1.5V
TC = 25°C
Pulse Test
2.0
1.0
DRAIN CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
TC = 25°C
Pulse Test
Feb.1999
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