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FS5VSH-2
Technical data
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MITSUBISHI FS5VSH-2 Technical data

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MITSUBISHI Nch POWER MOSFET
FS5VSH-2
HIGH-SPEED SWITCHING USE
FS5VSH-2
¡2.5V DRIVE ¡V
DSS ................................................................................100V
DS (ON) (MAX) ..............................................................0.44Ω
¡r
D ............................................................................................5A
¡I ¡Integrated Fast Recovery Diode (TYP.)
............. 80ns
OUTLINE DRAWING Dimensions in mm
+0.3
–0.5
3.0
q
10.5MAX.
1
qwe
5
wr
e
0.8
1.5MAX.
8.6 ± 0.3
1.5MAX.
2.6 ± 0.4
q GATE w DRAIN e SOURCE r DRAIN
r
4.5
9.8 ± 0.5
B
4.5
0.5
1.3
+0.3
0
–0
(1.5)
TO-220S
APPLICATION
MAXIMUM RATINGS (Tc = 25°C)
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg
—
Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
Typical value
100 ±10
5
20
5
5 20 20
–55 ~ +150 –55 ~ +150
1.2
V V A A A A A
W
°C °C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs
iss
C Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±10V , VDS = 0V
V
DS = 100V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 2A, VGS = 4V
I
D = 2A, VGS = 2.5V
I
D = 2A, VGS = 4V
I
D = 2A, VDS = 5V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 50V, ID = 2A, VGS = 4V, RGEN = RGS = 50Ω
V
S = 2A, VGS = 0V
I Channel to case
S = 5A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS5VSH-2
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
100
— —
0.6 — — — — — — — — — — — — — —
— — —
0.9
0.32
0.34
0.64 10
540
75 20 12 18 45 26
1.0 — 80
—
±0.1
0.1
1.2
0.44
0.47
0.88 — — — — — — — —
1.5
6.25 —
V
µA
mA
V
Ω Ω
V
S pF pF pF ns ns ns ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
(W)
32
D
24
16
8
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
10
Tc = 25°C Pulse Test
8
(A)
D
6
(TYPICAL)
PD = 20W
C
(°C)
VGS = 5V
4V
2.5V
2V
3V
MAXIMUM SAFE OPERATING AREA
5 3
2
1
10
(A)
7
D
5 3
2
0
10
7 5
3 2
–1
10
DRAIN CURRENT I
7
TC = 25°C
5
Single Pulse
3 2
210
0
357 2 10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
5.0
Tc = 25°C Pulse Test
4.0
(A)
D
3.0
1
VGS = 5V
tw = 10ms
100ms
1ms 10ms
DC
2
357 2
DS
(V)
4V 3V
2.5V
2V
4
2
DRAIN CURRENT I
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
1.5V
2.0
1.0
DRAIN CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
1.5V
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5VSH-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
5.0
4.0
(V)
3.0
DS (ON)
2.0
VOLTAGE V
1.0
DRAIN-SOURCE ON-STATE
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
10
8
(A)
D
6
4
2
DRAIN CURRENT I
Tc = 25°C Pulse Test
ID = 8A
5A
2A
GS
(V)
Tc = 25°C
DS
= 10V
V Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
0.8
(Ω)
0.6
DS (ON)
0.4
0.2
RESISTANCE r
DRAIN-SOURCE ON-STATE
0
–1
210
10
0
357 2 10
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
2
10
7 5
(S)
3
fs
10
2
1
TC = 25°C
75°C
125°C
7 5
3
ADMITTANCE y
FORWARD TRANSFER
2
Tc = 25°C Pulse Test
VGS = 2.5V
4V
1
357 2 10
357
D
(A)
VDS = 5V Pulse Test
2
0
0 1.0 2.0 3.0 4.0 5.0
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
2
3
10
7 5
3 2
2
10
7 5
3 2
CAPACITANCE
Ciss, Coss, Crss (pF)
1
10
7
Tch = 25°C
5
f = 1MH
3
VGS = 0V
2
10
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
Z
0
210
1
357357 2 10
GS
(V)
Ciss
Coss
Crss
2
357 23
DS
(V)
0
10
0
10
23 57 10
DRAIN CURRENT I
SWITCHING CHARACTERISTICS
(TYPICAL)
3
10
7 5
3 2
2
10
7 5
3 2
1
10
7 5
SWITCHING TIME (ns)
3 2
0
10
-1
10
23457 10
DRAIN CURRENT ID (A)
1
10
t t
t
Tch = 25°C V V R
0
10
d(off) f
r
23 57
D
(A)
t
d(on)
DD
= 50V
GS
= 4V
GEN
= RGS = 50Ω
23457
2
1
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5VSH-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
5.0
Tch = 25°C I
D
(V)
GS
= 5A
4.0
VDS = 20V
3.0
50V
2.0
80V
1.0
GATE-SOURCE VOLTAGE V
0
0246810
g
GATE CHARGE Q
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
VGS = 4V
7
I
5
Pulse Test
4
D
= 1/2I
(TYPICAL)
D
3 2
0
10
7 5
4 3
2
–1
10
–50 0 50 100 150
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
(A)
S
12
8
4
SOURCE CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
2.0
VDS = 10V I
D
= 1mA
1.6
(V)
1.2
GS (th)
0.8
VOLTAGE V
0.4
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
VGS = 0V Pulse Test
TC = 125°C
75°C
25°C
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V I
D
= 1mA
1.2
1.0
0.8
0.6
0.4 –50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
2
10
7
(ch–c)
5
th
3 2
1
10
D = 1.0
7 5
0.5
3
0.2
2
0.1
0.05
0.02
0.01 Single Pulse
–4
23 57 23 57 23 57 23 57
10
10
10
0
7 5
3 2
–1
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
–3
10
–2
PULSE WIDTH t
10
–1
P
10023 57
w
(s)
DM
tw
=
D
T
tw
T
10123 57
2
10
Feb.1999
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