Mitsubishi Electric Corporation Semiconductor Group FS5UM-5 Datasheet
MITSUBISHI Nch POWER MOSFET
FS5UM-5
HIGH-SPEED SWITCHING USE
FS5UM-5
¡VDSS ............................................................................... 250V
¡r
DS (ON) (MAX) ................................................................1.3Ω
¡I
D ............................................................................................5A
OUTLINE DRAWING Dimensions in mm
4.5
1.3
0.5 2.6
4.5MAX.
16
3.8MAX.
12.5MIN.
q
10.5MAX.
3.2
2.54 2.54
qwe
wr
e
r
7.0
φ 3.6
1.0
0.8
q GATE
w DRAIN
e SOURCE
r DRAIN
TO-220
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
DSS
V
VGSS
ID
IDM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
Typical value
250
±30
5
15
60
–55 ~ +150
–55 ~ +150
2.0
V
V
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
V
DS = 250V, VGS = 0V
D = 1mA, VDS = 10V
I
ID = 2A, VGS = 10V
ID = 2A, VGS = 10V
I
D = 2A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
DD = 150V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω
V
IS = 2A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS5UM-5
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
250
±30
—
—
2
—
—
1.6
—
—
—
—
—
—
—
—
—
—
—
—
—
3
1.0
2.0
2.5
270
55
10
11
13
32
22
1.5
—
—
—
±10
1.3
2.6
—
—
—
—
—
—
—
—
2.0
2.08
V
V
mA
mA
1
V
4
W
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
(W)
80
D
60
40
20
POWER DISSIPATION P
0
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
10
PD=
8
(A)
60W
D
6
4
(TYPICAL)
V
GS
= 20V
10V
C
(°C)
TC = 25°C
Pulse Test
7V
6V
MAXIMUM SAFE OPERATING AREA
5
3
2
1
10
(A)
D
7
5
3
2
0
10
7
5
3
TC = 25°C
2
DRAIN CURRENT I
200150100500
–1
10
7
5
23 5710
Single Pulse
1
23 5710223 5710
DRAIN-SOURCE VOLTAGE V
tw=10µs
100µs
1ms
10ms
DC
DS
(V)
3
2
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
5
= 20V
10V
6V
PD=
60W
TC = 25°C
Pulse Test
5.5V
5V
(A)
D
4
3
2
2
DRAIN CURRENT I
0
0 1020304050
DRAIN-SOURCE VOLTAGE VDS (V)
5V
1
DRAIN CURRENT I
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
4.5V
4V
Feb.1999
Loading...