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FS5AS-2
Technical data
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MITSUBISHI FS5AS-2 Technical data

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MITSUBISHI Nch POWER MOSFET
FS5AS-2
HIGH-SPEED SWITCHING USE
FS5AS-2
¡10V DRIVE ¡V
DSS ................................................................................100V
DS (ON) (MAX) ..............................................................0.47Ω
¡r
D ............................................................................................5A
¡I ¡Integrated Fast Recovery Diode (TYP.)
............. 80ns
OUTLINE DRAWING Dimensions in mm
0.9MAX.
2.3
q
6.5
5.0 ± 0.2
r
1.0
1.0MAX.
2.3
2.3
qwe
wr
e
10MAX.
5.5 ± 0.2
2.3MIN. 1.5 ± 0.2
q GATE w DRAIN e SOURCE r DRAIN
0.5 ± 0.1
A
0.5 ± 0.2
0.8
MP-3
APPLICATION
MAXIMUM RATINGS (Tc = 25°C)
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg
—
Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
Typical value
100 ±20
5
20
5
5 20 20
–55 ~ +150 –55 ~ +150
0.26
V V A A A A A
W
°C °C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
D = 1mA, VGS = 0V
V
(BR) DSS
IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs
iss
C Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
I
GS = ±20V, VDS = 0V
V
DS = 100V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 2A, VGS = 10V
I
D = 2A, VGS = 10V
I
D = 2A, VDS = 5V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 50V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω
V
I
S = 2A, VGS = 0V
Channel to case
S = 5A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS5AS-2
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
100
— —
2.0 — — — — — — — — — — — — —
— — —
3.0
0.33
0.66
4.0
280
75 18 15
8
17
7
1.0 — 80
—
±0.1
0.1
4.0
0.47
0.94 — — — — — — — —
1.5
6.25 —
V
µA
mA
V
Ω
V
S pF pF pF ns ns ns ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
(W)
32
D
24
16
8
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
10
TC = 25°C Pulse Test
8
(A)
D
6
(TYPICAL)
PD = 20W
C
(°C)
VGS = 20V 10V 8V
6V
MAXIMUM SAFE OPERATING AREA
5 3
2
1
10
(A)
7
D
5 3
2
0
10
7 5
3 2
–1
10
DRAIN CURRENT I
7
TC = 25°C
5
Single Pulse
3 2
210
0
357 2 10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
5.0
TC = 25°C Pulse Test
4.0
(A)
D
3.0
tw = 10ms
100ms
1ms 10ms
DC
1
VGS = 20V 10V 8V 6V
2
357 2
DS
(V)
5V
4
2
DRAIN CURRENT I
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
5V
2.0
1.0
DRAIN CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
4V
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5AS-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
5.0
4.0
(V)
3.0
DS (ON)
2.0
VOLTAGE V
1.0
DRAIN-SOURCE ON-STATE
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
10
8
(A)
D
6
4
2
DRAIN CURRENT I
TC = 25°C Pulse Test
ID = 8A
GS
(V)
TC = 25°C
DS
= 10V
V Pulse Test
5A
2A
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
TC = 25°C Pulse Test
0.4
(Ω)
0.3
DS (ON)
0.2
0.1
RESISTANCE r
DRAIN-SOURCE ON-STATE
0
–1
10
210
0
357 2 10
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
1
10
7 5
4
(S)
3
fs
2
0
10
7 5
4 3
ADMITTANCE y
FORWARD TRANSFER
2
VGS = 10V
20V
1
357 2 10
TC = 25°C
75°C
125°C
357
D
(A)
VDS = 5V Pulse Test
2
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
3
10
7 5
3 2
2
10
7 5
3 2
1
10
CAPACITANCE
7
Ciss, Coss, Crss (pF)
5
Tch = 25°C
3
f = 1MH
2
VGS = 0V
0
10
10
357 2 10
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
Z
0
1
357 2 10
GS
(V)
Ciss
Coss
Crss
2
357 32
DS
(V)
–1
10
0
10
23457 10
DRAIN CURRENT I
SWITCHING CHARACTERISTICS
(TYPICAL)
2
2
10
t
f
7 5
4
t
d(off)
3 2
t
d(on)
1
10
t
r
7
SWITCHING TIME (ns)
5 4
3 2
–1
10
23457 10
DRAIN CURRENT ID (A)
10
10
1
0
Tch = 25°C V V R
23457
D
(A)
DD
= 50V
GS
= 10V
GEN
= RGS = 50Ω
23457
2
1
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5AS-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
Tch = 25°C
(V)
I
D
GS
= 5A
16
VDS = 20V
12
50V
8
80V
4
GATE-SOURCE VOLTAGE V
0
0 4 8 12 16 20
g
GATE CHARGE Q
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
VGS = 10V
7
I
5
Pulse Test
4
D
= 1/2I
(TYPICAL)
D
3 2
0
10
7 5
4 3
2
–1
10
–50 0 50 100 150
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
VGS = 0V Pulse Test
16
(A)
S
TC = 125°C
12
8
4
SOURCE CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V I
D
= 1mA
4.0
(V)
3.0
GS (th)
2.0
VOLTAGE V
1.0
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
75°C 25°C
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
D
= 1mA
I
1.2
1.0
0.8
0.6
0.4 –50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
2
10
7
(ch–c)
5
th
3 2
1
10
D = 1.0
7 5
0.5
3
0.2
2
0.1
0.05
0.02
0.01 Single Pulse
–4
23 57 23 57 23 57 23 57
10
10
10
0
7 5
3 2
–1
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
–3
10
–2
PULSE WIDTH t
10
–1
P
10023 57
w
(s)
DM
tw
=
D
T
tw
T
10123 57
2
10
Feb.1999
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