Mitsubishi Electric Corporation Semiconductor Group FS50KM-06 Datasheet
MITSUBISHI Nch POWER MOSFET
FS50KM-06
HIGH-SPEED SWITCHING USE
FS50KM-06
¡10V DRIVE
¡V
DSS .................................................................................. 60V
DS (ON) (MAX) ..............................................................22mΩ
¡r
D ......................................................................................... 50A
¡I
¡Integrated Fast Recovery Diode (TYP.)
iso ................................................................................ 2000V
¡V
............. 65ns
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
123
w
q
e
6.5 ± 0.3
f 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
q GATE
w DRAIN
e SOURCE
E
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
AC for 1minute, Terminal to case
Typical value
60
±20
50
200
50
50
200
30
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
A
A
W
°C
°C
V
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
D = 1mA, VGS = 0V
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
I
GS = ±20V, VDS = 0V
V
DS = 60V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 25A, VGS = 10V
I
D = 25A, VGS = 10V
I
D = 25A, VDS = 10V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 30V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
V
I
S = 25A, VGS = 0V
Channel to case
S = 50A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS50KM-06
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
60
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
17
0.43
32
2300
570
280
35
95
95
80
1.0
—
65
—
±0.1
0.1
4.0
22
0.55
—
—
—
—
—
—
—
—
1.5
4.17
—
V
µA
mA
V
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
VGS = 20V
100
80
60
40
(TYPICAL)
10V
8V
TC = 25°C
Pulse Test
C (°C)
7V
6V
MAXIMUM SAFE OPERATING AREA
3
2
2
10
7
5
3
2
1
10
7
5
3
2
DRAIN CURRENT ID (A)
0
10
7
TC = 25°C
5
Single Pulse
3
100210
357357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
50
VGS = 20V
10V 8V
7V
40
30
PD = 30W
20
tw = 10ms
1
357 23
100ms
1ms
10ms
100ms
DC
2
DS (V)
6V
20
DRAIN CURRENT ID (A)
0
012345
PD = 30W
DRAIN-SOURCE VOLTAGE VDS (V)
5V
10
DRAIN CURRENT ID (A)
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
5V
TC = 25°C
Pulse Test
Feb.1999
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