Mitsubishi Electric Corporation Semiconductor Group FS50AS-3 Datasheet
Feb.1999
6.5
2.3
2.3
0.9MAX.
1.0MAX.
2.3
1.0
0.5 ± 0.1
5.5 ± 0.2
10MAX.
2.3MIN. 1.5 ± 0.2
0.5 ± 0.2
0.8
5.0 ± 0.2
A
q GATE
w DRAIN
e SOURCE
r DRAIN
wr
q
qwe
r
e
FS50AS-03
OUTLINE DRAWING Dimensions in mm
MP-3
MITSUBISHI Nch POWER MOSFET
FS50AS-03
HIGH-SPEED SWITCHING USE
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
30
±20
50
200
50
50
200
35
–55 ~ +150
–55 ~ +150
0.26
V
GS = 0V
V
DS = 0V
L = 30µH
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
V
A
A
A
A
A
W
°C
°C
g
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Symbol
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
¡10V DRIVE
¡V
DSS .................................................................................. 30V
¡r
DS (ON) (MAX) ..............................................................23mΩ
¡I
D ......................................................................................... 50A
¡Integrated Fast Recovery Diode (TYP.)
............. 60ns
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50AS-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
0
10
20
30
40
50
0 20050 100 150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE VDS (V)
10
0
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
0
357 2 10
1
357 2 10
2
357
2
3
23
tw = 10ms
TC = 25°C
Single Pulse
100ms
10ms
1ms
DC
0
10
20
30
40
50
0 0.4 0.8 1.2 1.6 2.0
VGS = 20V 10V 8V
5V
6V
TC = 25°C
Pulse Test
PD = 35W
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1.0
VGS = 20V 7V 6V
4V
5V
TC = 25°C
Pulse Test
10V
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
C
iss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
V
µA
mA
V
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
30
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
17
0.425
23
1300
500
240
25
120
55
68
1.0
—
60
—
±0.1
0.1
4.0
23
0.575
—
—
—
—
—
—
—
—
1.5
3.57
—
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol UnitParameter Test conditions
Limits
Min. Typ. Max.
I
D = 1mA, VGS = 0V
V
GS = ±20V, VDS = 0V
V
DS = 30V, VGS = 0V
I
D = 1mA, VDS = 10V
I
D = 25A, VGS = 10V
I
D = 25A, VGS = 10V
I
D = 25A, VDS = 10V
V
DS = 10V, VGS = 0V, f = 1MHz
V
DD = 15V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
I
S = 25A, VGS = 0V
Channel to case
I
S = 25A, dis/dt = –50A/µs
PERFORMANCE CURVES
Loading...