Feb.1999
6.5
2.3
2.3
0.9MAX.
1.0MAX.
2.3
1.0
0.5 ± 0.1
5.5 ± 0.2
10MAX.
2.3MIN. 1.5 ± 0.2
0.5 ± 0.2
0.8
5.0 ± 0.2
A
q GATE
w DRAIN
e SOURCE
r DRAIN
wr
q
qwe
r
e
FS50AS-03
OUTLINE DRAWING Dimensions in mm
MP-3
MITSUBISHI Nch POWER MOSFET
FS50AS-03
HIGH-SPEED SWITCHING USE
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
30
±20
50
200
50
50
200
35
–55 ~ +150
–55 ~ +150
0.26
V
GS = 0V
V
DS = 0V
L = 30µH
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
V
A
A
A
A
A
W
°C
°C
g
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Symbol
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
¡10V DRIVE
¡V
DSS .................................................................................. 30V
¡r
DS (ON) (MAX) ..............................................................23mΩ
¡I
D ......................................................................................... 50A
¡Integrated Fast Recovery Diode (TYP.)
............. 60ns
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50AS-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
0
10
20
30
40
50
0 20050 100 150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE VDS (V)
10
0
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
0
357 2 10
1
357 2 10
2
357
2
3
23
tw = 10ms
TC = 25°C
Single Pulse
100ms
10ms
1ms
DC
0
10
20
30
40
50
0 0.4 0.8 1.2 1.6 2.0
VGS = 20V 10V 8V
5V
6V
TC = 25°C
Pulse Test
PD = 35W
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1.0
VGS = 20V 7V 6V
4V
5V
TC = 25°C
Pulse Test
10V
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
C
iss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
V
µA
mA
V
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
30
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
17
0.425
23
1300
500
240
25
120
55
68
1.0
—
60
—
±0.1
0.1
4.0
23
0.575
—
—
—
—
—
—
—
—
1.5
3.57
—
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol UnitParameter Test conditions
Limits
Min. Typ. Max.
I
D = 1mA, VGS = 0V
V
GS = ±20V, VDS = 0V
V
DS = 30V, VGS = 0V
I
D = 1mA, VDS = 10V
I
D = 25A, VGS = 10V
I
D = 25A, VGS = 10V
I
D = 25A, VDS = 10V
V
DS = 10V, VGS = 0V, f = 1MHz
V
DD = 15V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
I
S = 25A, VGS = 0V
Channel to case
I
S = 25A, dis/dt = –50A/µs
PERFORMANCE CURVES
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50AS-03
HIGH-SPEED SWITCHING USE
0
20
40
60
80
100
0 4 8 12 16 20
TC = 25°C
V
DS
= 10V
Pulse Test
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT ID (A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
10
0
10
1
23457 10
2
23457
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
TC = 25°C
VDS = 10V
Pulse Test
75°C
125°C
10
2
3
5
7
10
3
2
3
5
7
10
4
2
3
2
5
7
10
0
210
1
357357 2 10
2
357 23
2
Tch = 25°C
f = 1MH
Z
VGS = 0V
Ciss
Coss
Crss
0
1.0
2.0
3.0
4.0
5.0
0 4 8 12 16 20
TC = 25°C
Pulse Test
30A
50A
ID = 80A
0
10
20
30
40
50
10
0
210
1
357 2 10
2
357 2 10
3
357
VGS = 10V
20V
TC = 25°C
Pulse Test
10
0
10
1
23457 10
2
23457
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
Tch = 25°C
V
DD
= 15V
V
GS
= 10V
R
GEN
= RGS = 50Ω
t
d(off)
t
d(on)
t
f
t
r
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50AS-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch–c)
(°C/W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
–50 0 50 100 150
VGS = 10V
I
D
= 1/2I
D
Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
–50 0 50 100 150
VGS = 0V
I
D
= 1mA
0
4
8
12
16
20
0 1020304050
VDS = 10V
Tch = 25°C
I
D
= 50A
20V
25V
0
25
50
75
100
0 0.4 0.8 1.2 1.6 2.0
VDS = 0V
Pulse Test
TC = 125°C
75°C
25°C
0
1.0
2.0
3.0
4.0
5.0
–50 0 50 100 150
VDS = 10V
I
D
= 1mA
10
–2
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
–4
23 57 23 57 23 57 23 57
10023 57
10123 57
10
2
10
–3
10
–2
10
–1
P
DM
tw
D
=
T
tw
T
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
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