Mitsubishi Electric Corporation Semiconductor Group FS3VS-10 Datasheet

MITSUBISHI Nch POWER MOSFET

FS3VS-10

HIGH-SPEED SWITCHING USE

FS3VS-10

¡VDSS ................................................................................ 500V

¡r

DS (ON) (MAX) .................................................................4.4Ω

¡I

D ............................................................................................ 3A

OUTLINE DRAWING Dimensions in mm

r

+0.3

–0.5

3.0

q

10.5MAX.

1

qwe

5

wr

e

0.8

1.5MAX.

9.8 ± 0.5

8.6 ± 0.3

1.5MAX.

4.5

2.6 ± 0.4

q GATE
w DRAIN
e SOURCE
r DRAIN

4.5

0.5

1.3

+0.3

0

–0

(1.5)

TO-220S

APPLICATION

SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per­sonal computer etc.

MAXIMUM RATINGS (Tc = 25°C)

Symbol
VDSS
VGSS
ID
IDM
PD
Tch
Tstg

—

Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight

Parameter Conditions Ratings Unit

VGS = 0V
VDS = 0V

Typical value

500
±30

3
9

60
–55 ~ +150
–55 ~ +150

1.2

V
V
A
A

W

°C
°C

g

Feb.1999

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

V

(BR) GSS

IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)

Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance

ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 500V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1A, VGS = 10V
ID = 1A, VGS = 10V
ID = 1A, VDS = 10V

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω

IS = 1A, VGS = 0V
Channel to case

MITSUBISHI Nch POWER MOSFET

FS3VS-10

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

500
±30

—
—

2
—
—

1.0
—
—
—
—
—
—
—
—
—

—
—
—
—

3

3.4

3.4

1.5

300

35

6
13
10
30
30

1.5
—

—
—

±10

4.4

4.4
—
—
—
—
—
—
—
—

2.0

2.08

V
V

µA

mA

1

V

4

Ω

V

S
pF
pF
pF

ns
ns
ns
ns

V

°C/W

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

100

80

60

40

20

POWER DISSIPATION PD (W)

0

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

10

PD = 60W

8

6

(TYPICAL)

C (°C)

TC = 25°C
Pulse Test

VGS = 20V
10V
8V

MAXIMUM SAFE OPERATING AREA

1

10

7
5

3
2

0

10

7
5

3
2

–1

10

7
5

DRAIN CURRENT ID (A)

200150100500

TC = 25°C

3

Single Pulse

2

–2

10

23 5710123 5710223 571032

DRAIN-SOURCE VOLTAGE V

tw=10µs

100µs

1ms

10ms
DC

DS (V)

OUTPUT CHARACTERISTICS

(TYPICAL)

5

TC = 25°C
Pulse Test

4

3

VGS = 20V
10V
8V

PD = 60W

6V

4

2

DRAIN CURRENT ID (A)

0

0 1020304050

DRAIN-SOURCE VOLTAGE VDS (V)

6V

5V

2

1

DRAIN CURRENT ID (A)

0

0 4 8 12 16 20

DRAIN-SOURCE VOLTAGE VDS (V)

5V

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS3VS-10

HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

40

32

(V)

24

DS (ON)

16

VOLTAGE V

8

DRAIN-SOURCE ON-STATE

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

10

TC = 25°C

DS

= 50V

V

8

(A)

D

Pulse Test

6

4

2

DRAIN CURRENT I

TC = 25°C
Pulse Test

ID = 4A

3A

2A

1A

GS

(V)

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

10

TC = 25°C
Pulse Test

8

(Ω)

6

DS (ON)

4

2

RESISTANCE r

DRAIN-SOURCE ON-STATE

0

–2

5710–123 5710023 5710

2310

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

1

10

VDS = 10V

7

Pulse Test

5

(S)

3



fs

2

0

10

7
5

3

ADMITTANCE y

FORWARD TRANSFER

2

TC = 25°C

75°C

125°C

VGS = 10V

D

(A)

20V

1

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

DRAIN-SOURCE VOLTAGE

7
5

3
2

2

10

7
5

3
2

CAPACITANCE

1

10

Ciss, Coss, Crss (pF)

7

Tch = 25°C

5

f = 1MHz

GS

= 0V

V

3
2

23 5710

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

0

23 5710

1

23 571022

GS

Coss

Crss

DS

(V)

Ciss

(V)

–1

10

10–123 5710

DRAIN CURRENT I

SWITCHING CHARACTERISTICS

(TYPICAL)

5

3

t

f

2

2

10

7

t

d(off)

5

3
2

t

10

d(on)

1

t

r

SWITCHING TIME (ns)

7
5

–1

23 5710

10

DRAIN CURRENT ID (A)

0

23 5710

D

(A)

Tch = 25°C

DD

= 200V

V
VGS = 10V

GEN

= R

R

GS

0

23 5710

1

= 50Ω

1

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS3VS-10

HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

20

16

Tch = 25°C
I

D

= 3A

VDS = 100V

(V)

GS

200V

12

400V

8

4

GATE-SOURCE VOLTAGE V

0

0 4 8 12 16 20

GATE CHARGE Q

g

(nC)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

DS (ON)

DS (ON)

10

1

7
5

VGS = 10V
ID = 1/2I
Pulse Test

(TYPICAL)

D

3
2

0

10

7
5

3
2

–1

10

–50

DRAIN-SOURCE ON-STATE RESISTANCE r

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

0 50 100 150

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

TC = 125°C

8

(A)

S

6

4

2

SOURCE CURRENT I

0

0 0.8 1.6 2.4 3.2 4.0

SOURCE-DRAIN VOLTAGE V

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

5.0
VDS = 10V

ID = 1mA

4.0

(V)

3.0

GS (th)

2.0

VOLTAGE V

1.0

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

75°C

VGS = 0V
Pulse Test

25°C

SD

(V)

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

CHANNEL TEMPERATURE

(TYPICAL)

1.4

BR (DSS)

BR (DSS)

VGS = 0V
ID = 1mA

1.2

1.0

0.8

0.6

0.4
–50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

TRANSIENT THERMAL IMPEDANCE

(°C/W)

1

10

7

(ch–c)

5

th

3

D=1

2

0.5

0

10

0.2

7
5

3

10

10

2

–1

7
5

3
2

–2

10

–4

23 57

0.05

0.02

0.01

Single Pulse

10

TRANSIENT THERMAL IMPEDANCE Z

CHARACTERISTICS

0.1

–3

–2

23 57 23 57 23 57

10

10

–1

PULSE WIDTH t

P

10023 57

w

(s)

DM

tw

D=

T

tw

T

10123 57

2

10

Feb.1999