MITSUBISHI Nch POWER MOSFET
FS3SM-18A
HIGH-SPEED SWITCHING USE
FS3SM-18A
¡VDSS ............................................................................... 900V
¡r
DS (ON) (MAX) ................................................................ 4.0Ω
¡I
D ........................................................................................... 3A
OUTLINE DRAWING Dimensions in mm
4.5
1.5
4.4
0.6 2.8
2
1.0
5.45
q
15.9MAX.
r
φ 3.2
qwe
5.45
4
wr
e
5.0
2
4
q GATE
w DRAIN
e SOURCE
r DRAIN
20.0
19.5MIN.
TO-3P
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
—
VGS = 0V
VDS = 0V
Typical value
900
±30
3
9
100
–55 ~ +150
–55 ~ +150
4.8
V
V
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 900V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1.5A, VGS = 10V
ID = 1.5A, VGS = 10V
ID = 1.5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 1.5A, VGS = 10V,
RGEN = RGS = 50Ω
IS = 1.5A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS3SM-18A
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
900
±30
—
—
2
—
—
2.1
—
—
—
—
—
—
—
—
—
—
—
—
—
3
3.08
4.62
3.5
770
77
13
15
15
90
25
1.0
—
—
—
±10
4.00
6.00
—
—
—
—
—
—
—
—
1.5
1.25
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
(W)
80
D
60
40
20
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
(A)
D
10
8
6
PD = 100W VGS = 20V
(TYPICAL)
C
(°C)
10V
TC = 25°C
Pulse Test
MAXIMUM SAFE OPERATING AREA
1
10
7
5
3
2
(A)
D
0
10
7
5
3
2
–1
10
7
5
DRAIN CURRENT I
3
TC = 25°C
2
Single Pulse
–2
10
0
10
210
1
357 2 10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
(A)
D
2.0
1.6
VGS = 20V@
10V
5V
1.2
2
357
DS
TC = 25°C
Pulse Test
tw = 10ms
100ms
1ms
10ms
100ms
DC
3
(V)
4.5V
4
2
DRAIN CURRENT I
0
0 1020304050
DRAIN-SOURCE VOLTAGE VDS (V)
5V
4V
0.8
0.4
DRAIN CURRENT I
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
4V
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3SM-18A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
50
40
(V)
30
DS (ON)
20
VOLTAGE V
10
DRAIN-SOURCE ON-STATE
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
10
8
(A)
D
6
4
2
DRAIN CURRENT I
TC = 25°C
Pulse Test
ID = 6A
GS
(V)
TC = 25°C
DS
= 50V
V
Pulse Test
3A
1A
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
10
TC = 25°C
Pulse Test
8
(Ω)
6
DS (ON)
VGS = 10V
4
2
RESISTANCE r
DRAIN-SOURCE ON-STATE
0
–1
10
210
0
357 2 10
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
1
10
7
5
(S)
3
fs
2
0
10
7
5
3
ADMITTANCE y
FORWARD TRANSFER
2
20V
1
357 2 10
125°C
D
75°C
357
(A)
TC = 25°C
VDS = 10V
Pulse Test
2
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
3
2
3
10
7
5
3
2
2
10
7
5
3
CAPACITANCE
2
Ciss, Coss, Crss (pF)
1
10
Tch = 25°C
7
f = 1MH
5
VGS = 0V
3
357 2 10
210
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
Z
0
1
357 2 10
GS
357
DS
(V)
Ciss
Coss
Crss
(V)
–1
10
–1
10
23 57 10
DRAIN CURRENT I
10
0
23 57
D
(A)
1
SWITCHING CHARACTERISTICS
(TYPICAL)
3
10
7
5
3
Tch = 25°C
DD
= 200V
V
GS
= 10V
V
GEN
= RGS = 50Ω
R
2
2
10
7
t
d(off)
5
3
SWITCHING TIME (ns)
2
1
2
2
10
–1
10
23 57 10
10
0
t
f
t
r
t
d(on)
23 57
1
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS3SM-18A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
Tch = 25°C
D
= 3A
I
(V)
GS
16
12
8
VDS = 250V
400V
600V
4
GATE-SOURCE VOLTAGE V
0
0 1020304050
GATE CHARGE Q
g
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
7
5
(TYPICAL)
VGS = 10V
D
= 1/2I
I
Pulse Test
3
2
0
10
7
5
3
2
–1
10
–50 0 50 100 150
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
(A)
S
10
8
TC = 125°C
6
75°C
25°C
VGS = 0V
Pulse Test
4
2
SOURCE CURRENT I
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE V
SD
(V)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
D
VDS = 10V
D
= 1mA
I
4.0
(V)
3.0
GS (th)
2.0
VOLTAGE V
1.0
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
D
I
= 1mA
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
1
10
7
(ch–c)
5
th
3
2
D = 1.0
0
10
0.5
7
5
0.2
3
0.1
2
–1
10
7
5
3
2
–2
10
–4
23 57 23 57 23 57 23 57
10
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
0.05
0.02
0.01
Single Pulse
–3
10
–2
PULSE WIDTH t
10
–1
10023 57
w
(s)
10123 57
2
10
Feb.1999
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