Mitsubishi Electric Corporation Semiconductor Group FS3KM-18A Datasheet
MITSUBISHI Nch POWER MOSFET
FS3KM-18A
HIGH-SPEED SWITCHING USE
FS3KM-18A
¡VDSS ................................................................................900V
¡r
DS (ON) (MAX) ................................................................ 4.0Ω
¡I
D ............................................................................................3A
¡V
iso ................................................................................2000V
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
123
w
q
e
6.5 ± 0.3
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
q GATE
w DRAIN
e SOURCE
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
Viso
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
—
VGS = 0V
VDS = 0V
AC for 1minute, Terminal to case
Typical value
900
±30
3
9
30
–55 ~ +150
–55 ~ +150
2000
2
V
V
A
A
W
°C
°C
Vrms
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 900V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1.5A, VGS = 10V
ID = 1.5A, VGS = 10V
ID = 1.5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 1.5A, VGS = 10V,
RGEN = RGS = 50Ω
IS = 1.5A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS3KM-18A
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
900
±30
—
—
2
—
—
2.1
—
—
—
—
—
—
—
—
—
—
—
—
—
3
3.08
4.62
3.5
770
77
13
15
15
90
25
1.0
—
—
—
±10
4.00
6.00
—
—
—
—
—
—
—
—
1.5
4.17
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
(W)
40
D
30
20
10
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
10
PD = 30W VGS = 20V
8
(A)
D
6
(TYPICAL)
C
(°C)
10V
TC = 25°C
Pulse Test
MAXIMUM SAFE OPERATING AREA
1
10
7
5
3
2
(A)
D
0
10
7
5
3
2
–1
10
7
5
DRAIN CURRENT I
3
TC = 25°C
2
Single Pulse
–2
10
0
10
210
1
357 2 10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
(A)
D
2.0
1.6
VGS = 20V@
10V
5V
1.2
PD = 30W
2
357
DS
(V)
4.5V
tw = 10ms
100ms
1ms
10ms
100ms
DC
3
4
2
DRAIN CURRENT I
0
0 1020304050
4V
DRAIN-SOURCE VOLTAGE VDS (V)
5V
0.8
0.4
DRAIN CURRENT I
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
TC = 25°C
Pulse Test
4V
Feb.1999
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