Mitsubishi Electric Corporation Semiconductor Group FS30KMH-03 Datasheet
MITSUBISHI Nch POWER MOSFET
FS30KMH-03
HIGH-SPEED SWITCHING USE
FS30KMH-03
¡2.5V DRIVE
DSS .................................................................................. 30V
¡V
DS (ON) (MAX) ..............................................................46mΩ
¡r
¡I
D ......................................................................................... 30A
iso ................................................................................ 2000V
¡V
¡Integrated Fast Recovery Diode (TYP.)
............. 45ns
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
123
w
q
e
6.5 ± 0.3
f 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
q GATE
w DRAIN
e SOURCE
E
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 30µH
AC for 1minute, Terminal to case
Typical value
30
±10
30
120
30
30
120
20
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
A
A
W
°C
°C
V
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±10V , VDS = 0V
V
DS = 30V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 15A, VGS = 4V
I
D = 15A, VGS = 2.5V
I
D = 15A, VGS = 4V
I
D = 15A, VDS = 5V
I
V
DS = 10V, VGS = 0V, f = 1MH4
Channel to case
S = 15A, dis/dt = –50A/µs
I
MITSUBISHI Nch POWER MOSFET
FS30KMH-03
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
30
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.9
34
43
0.51
23
1150
260
120
19
95
90
100
1.0
—
45
—
±0.1
0.1
1.2
46
69
0.69
—
—
—
—
—
—
—
—
1.5
6.25
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
(W)
32
D
24
16
8
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
VGS = 5V
50
40
(A)
D
30
(TYPICAL)
4V
C
(°C)
Tc = 25°C
Pulse Test
3V
2.5V
MAXIMUM SAFE OPERATING AREA
2
2
10
7
5
(A)
3
D
2
1
10
7
5
3
2
0
10
DRAIN CURRENT I
7
5
3
2
TC = 25°C
Single Pulse
0
357 2 10
210
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 5V
(A)
D
20
16
4V
2.5V
12
1
tw = 10ms
100ms
1ms
10ms
DC
357
DS
PD = 20W
(V)
2V
2
2
20
10
DRAIN CURRENT I
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
1.5V
PD = 20W
2V
8
4
DRAIN CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
1.5V
Tc = 25°C
Pulse Test
Feb.1999
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