Mitsubishi Electric Corporation Semiconductor Group FS30ASJ-06 Datasheet

MITSUBISHI Nch POWER MOSFET
FS30ASJ-06
HIGH-SPEED SWITCHING USE
FS30ASJ-06
¡4V DRIVE ¡V
DSS ................................................................................. 60V
DS (ON) (MAX) ............................................................. 30m
¡r
D ........................................................................................ 30A
¡I ¡Integrated Fast Recovery Diode (TYP.)
............ 60ns
OUTLINE DRAWING Dimensions in mm
0.9MAX.
2.3
q
6.5
5.0 ± 0.2
r
1.0
1.0MAX.
2.3
2.3
qwe
wr
e
10MAX.
5.5 ± 0.2
2.3MIN. 1.5 ± 0.2
q GATE w DRAIN e SOURCE r DRAIN
0.5 ± 0.1
A
0.5 ± 0.2
0.8
MP-3
APPLICATION
MAXIMUM RATINGS (Tc = 25°C)
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg
Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
Typical value
60
±20
30
120
30 30
120
35 –55 ~ +150 –55 ~ +150
0.26
V V A A A A A
W
°C °C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs
iss
C Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±20V, VDS = 0V
V
DS = 60V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 15A, VGS = 10V
I
D = 15A, VGS = 4V
I
D = 15A, VGS = 10V
I
D = 15A, VDS = 10V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 30V, ID = 15A, VGS = 10V, RGEN = RGS = 50
V
S = 15A, VGS = 0V
I Channel to case
S = 30A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS30ASJ-06
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
60 — —
1.0 — — — — — — — — — — — — — —
— — —
1.5 25 31
0.38 28
1800
340 180
17 46
120
95
1.0 — 60
±0.1
0.1
2.0 30 38
0.45 — — — — — — — —
1.5
3.57 —
V
µA
mA
V m m
V
S
pF pF pF ns ns ns ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
(W)
40
D
30
20
10
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
VGS = 10V
50
40
(A)
D
30
20
(TYPICAL)
5V 4V
C
(°C)
TC = 25°C Pulse Test
3V
MAXIMUM SAFE OPERATING AREA
3 2
2
10
7
(A)
5
D
3 2
1
10
7 5
3 2
DRAIN CURRENT I
TC = 25°C
0
10
Single Pulse
7 5
3
0
10
357 2 10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
(A)
D
VGS = 10V
20
16
5V
4V 3V
12
8
1
357 2 3
PD = 35W
tw = 10ms
100ms
1ms
10ms
DC
2
DS
(V)
TC = 25°C Pulse Test
2.5V
10
DRAIN CURRENT I
0
0 1.0 2.0 3.0 4.0 5.0
DRAIN-SOURCE VOLTAGE VDS (V)
PD = 35W
2V
4
DRAIN CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
2V
Feb.1999
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